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An accurate and computationally-efficient model of boron implantation through screen oxide layers into (100) single-crystal silicon

Proceedings of IEEE International Electron Devices Meeting, 1993, p.291-294

1993

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ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE-CRYSTAL SILICON

Compel, 1992-04, Vol.11 (4), p.391-402

Tasch, Al F.

1992

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An accurate and computationally efficient semi-empirical model for arsenic implants into single-crystal (100) silicon

Journal of electronic materials, 1994-08, Vol.23 (8), p.801-808

1994

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Accurate and computationally efficient semiempirical model for arsenic implants into single-crystal (100)silicon

Journal of electronic materials, 1994-08, Vol.23 (8), p.801-808

1994

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Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

International Electron Devices Meeting 1991 [Technical Digest], 1991, p.697-700

1991

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Analysis of ion scattering by thin SiO2 layers in boron implants through SiO2 into silicon

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992, Vol.10 (4), p.1690-1695

1992

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Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into Silicon

Journal of the Electrochemical Society, 1991-07, Vol.138 (7), p.2102-2107

1991

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Bilateral focal polymicrogyria in Ehlers-Danlos syndrome

Archives of neurology (Chicago), 2000-01, Vol.57 (1), p.123

2000

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Boron implant profile variation across a single wafer due to electrostatic scanning

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.159-163

1991

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Challenges in achieving sub-100 nm MOSFETs

Proceedings - International Conference on Wafer Scale Integration, 1997

Tasch, Al F

1997

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Channeling control for large tilt angle implantation in Si 〈100

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.39-44

1991

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Charge-coupled device structures for VLSI memories

IEEE transactions on electron devices, 1979-06, Vol.26 (6), p.871-881

1979

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The charge-coupled RAM cell concept

IEEE transactions on electron devices, 1976-02, Vol.23 (2), p.126-131

1976

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The charge-coupled RAM cell concept

IEEE journal of solid-state circuits, 1976-02, Vol.11 (1), p.58-63

1976

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Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

IEEE transactions on electron devices, 1982-04, Vol.29 (4), p.547-553

1982

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A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE-CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

Compel, 1991-04, Vol.10 (4), p.331-340

1991

Volltextzugriff (PDF)

A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLECRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

Compel, 1991-04, Vol.10 (4), p.331-340

1991

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A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

IEEE transactions on electron devices, 1991-01, Vol.38 (1), p.151-159

1991

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Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

IEEE transactions on electron devices, 1998-07, Vol.45 (7), p.1487-1493

1998

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A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Journal of computational electronics, 2002-10, Vol.1 (3), p.415-419

2002

Volltextzugriff (PDF)

Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal Silicon

Journal of the Electrochemical Society, 1991-07, Vol.138 (7), p.2107-2115

1991

Volltextzugriff (PDF)

A detailed physical model for ion implant induced damage in silicon

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1226-1238

1998

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Device fabrication in silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding technique

IEEE transactions on electron devices, 1982-01, Vol.29 (3), p.389-394

1982

Volltextzugriff (PDF)

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Solid-state electronics, 1990-06, Vol.33 (6), p.645-650

1990

Volltextzugriff (PDF)

An efficient non-parabolic formulation of the hydrodynamic model for silicon device simulation

International Technical Digest on Electron Devices, 1990, p.353-356

1990

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An accurate and computationally-efficient model of boron implantation through screen oxide layers into (100) single-crystal silicon

ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE-CRYSTAL SILICON

An accurate and computationally efficient semi-empirical model for arsenic implants into single-crystal (100) silicon

Accurate and computationally efficient semiempirical model for arsenic implants into single-crystal (100)silicon

Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

Analysis of ion scattering by thin SiO2 layers in boron implants through SiO2 into silicon

Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into Silicon

Bilateral focal polymicrogyria in Ehlers-Danlos syndrome

Boron implant profile variation across a single wafer due to electrostatic scanning

Challenges in achieving sub-100 nm MOSFETs

Channeling control for large tilt angle implantation in Si 〈100

Charge-coupled device structures for VLSI memories

The charge-coupled RAM cell concept

The charge-coupled RAM cell concept

Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE-CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLECRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal Silicon

A detailed physical model for ion implant induced damage in silicon

Device fabrication in silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding technique

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

An efficient non-parabolic formulation of the hydrodynamic model for silicon device simulation

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