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Modeling of direct tunneling current through gate dielectric stacks

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1851-1857

2000

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IEEE_Xplore

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

Solid-state electronics, 1998-06, Vol.42 (6), p.997-1006

1998

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A detailed physical model for ion implant induced damage in silicon

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1226-1238

1998

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IEEE_Xplore

A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1943-1949

2000

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IEEE_Xplore

Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

IEEE transactions on electron devices, 1998-07, Vol.45 (7), p.1487-1493

1998

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IEEE_Xplore

Hydrodynamic (HD) Simulation of N -Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model

VLSI design (Yverdon, Switzerland), 1998-01, Vol.8 (1-4), p.423-428

1998

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A physically-based model for quantization effects in hole inversion layers

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.179-186

1998

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IEEE_Xplore

Simulation program suitable for hot carrier studies : an efficient multiband Monte Carlo model using both full and analytic band structure description for silicon

Journal of applied physics, 1993-04, Vol.73 (7), p.3339-3347

1993

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Study of Electron Velocity Overshoot in NMOS Inversion Layers

VLSI design (Yverdon, Switzerland), 1998-01, Vol.8 (1-4), p.429-435

1998

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The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

IEEE transactions on semiconductor manufacturing, 2000-05, Vol.13 (2), p.243-248

2000

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IEEE_Xplore

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Journal of computational electronics, 2002-10, Vol.1 (3), p.415-419

2002

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Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.241-245

2002

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Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Solid-state electronics, 1990-06, Vol.33 (6), p.645-650

1990

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Challenges in achieving sub-100 nm MOSFETs

Proceedings - International Conference on Wafer Scale Integration, 1997

Tasch, Al F

1997

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A universal ion implantation model for all species into single-crystal silicon

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1519-1525

2002

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IEEE_Xplore

Monte Carlo simulation of boron implantation into single-crystal silicon

IEEE transactions on electron devices, 1992-07, Vol.39 (7), p.1614-1621

1992

Link zum Volltext
IEEE_Xplore

Growth of polycrystalline calcium fluoride via low-temperature organometallic chemical vapor deposition

Chemistry of materials, 1989-05, Vol.1 (3), p.289-290

1989

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Knowledge and technology transfer: a university experience and perspective

Proceedings - University/Government/Industry Microelectronics Symposium, 1995, p.4p-4p

Tasch, Al F

1995

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Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOS DRAMs

Proceedings of the IEEE, 1989, Vol.77 (3), p.374-388

1989

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A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

IEEE transactions on electron devices, 1991-01, Vol.38 (1), p.151-159

1991

Link zum Volltext
IEEE_Xplore

Ion implantation in future MOS technology

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-04, Vol.74 (1), p.3-6

Tasch, Al F.

1993

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A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

IEEE transactions on electron devices, 1989-06, Vol.36 (6), p.1117-1124

1989

Link zum Volltext
IEEE_Xplore

Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

IEEE transactions on semiconductor manufacturing, 1996-02, Vol.9 (1), p.49-58

1996

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IEEE_Xplore

An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.502-511

1998

Link zum Volltext
IEEE_Xplore

Modeling of cumulative damage effects on ion-implantation profiles

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.60-64

1991

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Modeling of direct tunneling current through gate dielectric stacks

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

A detailed physical model for ion implant induced damage in silicon

A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

Hydrodynamic (HD) Simulation of N -Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model

A physically-based model for quantization effects in hole inversion layers

Simulation program suitable for hot carrier studies : an efficient multiband Monte Carlo model using both full and analytic band structure description for silicon

Study of Electron Velocity Overshoot in NMOS Inversion Layers

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Challenges in achieving sub-100 nm MOSFETs

A universal ion implantation model for all species into single-crystal silicon

Monte Carlo simulation of boron implantation into single-crystal silicon

Growth of polycrystalline calcium fluoride via low-temperature organometallic chemical vapor deposition

Knowledge and technology transfer: a university experience and perspective

Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOS DRAMs

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

Ion implantation in future MOS technology

A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers

Modeling of cumulative damage effects on ion-implantation profiles

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