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Modeling of direct tunneling current through gate dielectric stacks

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1851-1857

2000

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IEEE_Xplore

A detailed physical model for ion implant induced damage in silicon

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1226-1238

1998

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IEEE_Xplore

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

Solid-state electronics, 1998-06, Vol.42 (6), p.997-1006

1998

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Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

IEEE transactions on electron devices, 1998-07, Vol.45 (7), p.1487-1493

1998

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IEEE_Xplore

A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1943-1949

2000

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IEEE_Xplore

A physically-based model for quantization effects in hole inversion layers

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.179-186

1998

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IEEE_Xplore

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

IEEE transactions on semiconductor manufacturing, 2000-05, Vol.13 (2), p.243-248

2000

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IEEE_Xplore

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Journal of computational electronics, 2002-10, Vol.1 (3), p.415-419

2002

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Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.241-245

2002

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Simulation program suitable for hot carrier studies : an efficient multiband Monte Carlo model using both full and analytic band structure description for silicon

Journal of applied physics, 1993-04, Vol.73 (7), p.3339-3347

1993

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Hydrodynamic (HD) Simulation of N -Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model

VLSI design (Yverdon, Switzerland), 1998-01, Vol.8 (1-4), p.423-428

1998

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Study of Electron Velocity Overshoot in NMOS Inversion Layers

VLSI design (Yverdon, Switzerland), 1998-01, Vol.8 (1-4), p.429-435

1998

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Photodetectors fabricated from rapid-thermal-oxidized porous Si

Applied physics letters, 1993-05, Vol.62 (22), p.2818-2820

1993

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A universal ion implantation model for all species into single-crystal silicon

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1519-1525

2002

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IEEE_Xplore

Challenges in achieving sub-100 nm MOSFETs

Proceedings - International Conference on Wafer Scale Integration, 1997

Tasch, Al F

1997

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Monte Carlo simulation of boron implantation into single-crystal silicon

IEEE transactions on electron devices, 1992-07, Vol.39 (7), p.1614-1621

1992

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IEEE_Xplore

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Solid-state electronics, 1990-06, Vol.33 (6), p.645-650

1990

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Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials

IEEE transactions on electron devices, 2002-07, Vol.49 (7), p.1172-1182

2002

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IEEE_Xplore

Growth of polycrystalline calcium fluoride via low-temperature organometallic chemical vapor deposition

Chemistry of materials, 1989-05, Vol.1 (3), p.289-290

1989

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Knowledge and technology transfer: a university experience and perspective

Proceedings - University/Government/Industry Microelectronics Symposium, 1995, p.4p-4p

Tasch, Al F

1995

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Electrical and reliability properties of PZT thin films for ULSI DRAM applications

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 1991-11, Vol.38 (6), p.690-703

1991

Link zum Volltext
IEEE_Xplore

SiGe heterojunction vertical p -type metal–oxide–semiconductor field-effect transistors with Si cap

Applied physics letters, 2000-09, Vol.77 (11), p.1656-1658

2000

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Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOS DRAMs

Proceedings of the IEEE, 1989, Vol.77 (3), p.374-388

1989

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A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-12, Vol.184 (4), p.500-508

2001

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The Role of the Lead Zirconate Titanate (PZT)-Pt Interface in the Anomalous Phase Transformation Kinetics in Sputtered Pzt Thin Film Capacitors at Sub-2000 Å Thicknesses

MRS proceedings, 1991, Vol.243, Article 367

1991

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Modeling of direct tunneling current through gate dielectric stacks

A detailed physical model for ion implant induced damage in silicon

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

A physically-based model for quantization effects in hole inversion layers

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

Simulation program suitable for hot carrier studies : an efficient multiband Monte Carlo model using both full and analytic band structure description for silicon

Hydrodynamic (HD) Simulation of N -Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model

Study of Electron Velocity Overshoot in NMOS Inversion Layers

Photodetectors fabricated from rapid-thermal-oxidized porous Si

A universal ion implantation model for all species into single-crystal silicon

Challenges in achieving sub-100 nm MOSFETs

Monte Carlo simulation of boron implantation into single-crystal silicon

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials

Growth of polycrystalline calcium fluoride via low-temperature organometallic chemical vapor deposition

Knowledge and technology transfer: a university experience and perspective

Electrical and reliability properties of PZT thin films for ULSI DRAM applications

SiGe heterojunction vertical p -type metal–oxide–semiconductor field-effect transistors with Si cap

Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOS DRAMs

A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures

The Role of the Lead Zirconate Titanate (PZT)-Pt Interface in the Anomalous Phase Transformation Kinetics in Sputtered Pzt Thin Film Capacitors at Sub-2000 Å Thicknesses

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