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Optimization of a-SiGe:H alloy composition for stable solar cells

Japanese Journal of Applied Physics, 1995, Vol.34 (4A), p.1741-1747

1995

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Advanced fabrication technologies of integrated-type structure for a-Si solar cells

Solar energy materials and solar cells, 1997-11, Vol.48 (1), p.373-381

1997

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Film property control of hydrogenated amorphous silicon germanium for solar cells

Japanese Journal of Applied Physics, 1993-11, Vol.32 (11A), p.4894-4899

1993

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Electrode Materials for High Performance Secondary Batteries

Materia Japan, 2003/09/20, Vol.42(9), pp.631-635

2003

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Trapping and recombination of photogenerated carriers in as-grown high-temperature-annealed and light-soaked a-Si:H

Japanese Journal of Applied Physics, 1993-08, Vol.32 (8), p.3376-3384

1993

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Multi-source power supply system using micro-photovoltaic devices combined with microwave antenna

Sensors and actuators. A, Physical, 2002-01, Vol.95 (2), p.208-211

2002

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Practical Simulation of the I–V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking

Japanese Journal of Applied Physics, 1996, Vol.35 (10R), p.5274

1996

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High-quality p-type a-SiC films obtained by using a new doping Gas of B(CH3)3

Japanese Journal of Applied Physics, 1989-12, Vol.28 (12), p.2436-2440

1989

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Stable, metastable and charged dangling bonds in transient light-induced ESR of undoped a-Si:H

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (12A), p.3801-3807

1992

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Low-hydrogen-content, stable amorphous silicon thin films prepared by ion-assisted method

Japanese Journal of Applied Physics, 1994-10, Vol.33 (10), p.5652-5656

1994

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Irradiation-temperature dependence of the light-induced effect in a-Si solar cells

Japanese Journal of Applied Physics, 1992-05, Vol.31 (5A), p.1267-1271

1992

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Transient light-induced ESR investigations of the role of hydrogen in the stability of a-Si:H

Japanese Journal of Applied Physics, 1992-04, Vol.31 (4), p.995-998

1992

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High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

Solar energy materials and solar cells, 2001-02, Vol.66 (1), p.283-288

2001

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Optoelectric Characteristics of a-Si/a-SiC Superlattice-Structure Films and Devices Fabricated by the Photo-CVD Method

Japanese Journal of Applied Physics, 1989-10, Vol.28 (10R), p.1769

1989

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Superlattice structure a-Si films fabricated by the photo-CVD method and their application to solar cells

Japanese Journal of Applied Physics, 1987, Vol.26 (1), p.28-32

1987

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A New Analytical Method of Amorphous Silicon Solar Cells

Japanese Journal of Applied Physics, 1986-10, Vol.25 (10R), p.1538

1986

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Preparation and properties of a-SiGe:H:F films by a glow discharge decomposition

Japanese Journal of Applied Physics, 1986-12, Vol.25 (12), p.1795-1799

1986

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Preparation and properties of a-SiGe:H films fabricated with a super chamber (separated ultra-high vacuum reaction chamber)

Japanese Journal of Applied Physics, 1987-12, Vol.26 (12), p.1978-1982

1987

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High Quality a-Si Films and Superlattice Structure p-Layer a-Si Solar Cells

MRS proceedings, 1986, Vol.70, Article 511

1986

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High Performance A–Si Solar Cells and Narrow Bandgap Materials

MRS proceedings, 1985, Vol.49, Article 275

1985

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Recent progress of amorphous silicon solar cell applications and systems

Renewable energy, 1996-05, Vol.8 (1), p.390-395

1996

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Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells

Japanese Journal of Applied Physics, 1982-01, Vol.21 (S2), p.251-257

1982

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Amorphous solar cells prepared by plasma CVD

Journal of the Metal Finishing Society of Japan, 1984, Vol.35 (12), p.562-571

1984

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High Speed Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition (3rd Report): Electrical and Optical Properties of a-Si Films Fabricated at Very High Deposition Rate

Journal of the Japan Society for Precision Engineering, 2001/05/05, Vol.67(5), pp.829-833

2001

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High-rate Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report): Investigation for Higher Deposition Rate

Journal of the Japan Society for Precision Engineering, 2000/10/05, Vol.66(10), pp.1636-1640

2000

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Optimization of a-SiGe:H alloy composition for stable solar cells

Advanced fabrication technologies of integrated-type structure for a-Si solar cells

Film property control of hydrogenated amorphous silicon germanium for solar cells

Electrode Materials for High Performance Secondary Batteries

Trapping and recombination of photogenerated carriers in as-grown high-temperature-annealed and light-soaked a-Si:H

Multi-source power supply system using micro-photovoltaic devices combined with microwave antenna

Practical Simulation of the I–V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking

High-quality p-type a-SiC films obtained by using a new doping Gas of B(CH3)3

Stable, metastable and charged dangling bonds in transient light-induced ESR of undoped a-Si:H

Low-hydrogen-content, stable amorphous silicon thin films prepared by ion-assisted method

Irradiation-temperature dependence of the light-induced effect in a-Si solar cells

Transient light-induced ESR investigations of the role of hydrogen in the stability of a-Si:H

High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

Optoelectric Characteristics of a-Si/a-SiC Superlattice-Structure Films and Devices Fabricated by the Photo-CVD Method

Superlattice structure a-Si films fabricated by the photo-CVD method and their application to solar cells

A New Analytical Method of Amorphous Silicon Solar Cells

Preparation and properties of a-SiGe:H:F films by a glow discharge decomposition

Preparation and properties of a-SiGe:H films fabricated with a super chamber (separated ultra-high vacuum reaction chamber)

High Quality a-Si Films and Superlattice Structure p-Layer a-Si Solar Cells

High Performance A–Si Solar Cells and Narrow Bandgap Materials

Recent progress of amorphous silicon solar cell applications and systems

Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells

Amorphous solar cells prepared by plasma CVD

High Speed Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition (3rd Report): Electrical and Optical Properties of a-Si Films Fabricated at Very High Deposition Rate

High-rate Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report): Investigation for Higher Deposition Rate

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