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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

Nature communications, 2014-06, Vol.5 (1), p.4232-4232, Article 4232

2014

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Switching kinetics of electrochemical metallization memory cells

Physical chemistry chemical physics : PCCP, 2013-05, Vol.15 (18), p.6945-6952

2013

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Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

ACS nano, 2013-07, Vol.7 (7), p.6396-6402

2013

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Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

Advanced functional materials, 2015-10, Vol.25 (40), p.6374-6381

2015

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Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches

Small (Weinheim an der Bergstrasse, Germany), 2016-03, Vol.12 (10), p.1334-1341

2016

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Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

Nanoscale, 2012-05, Vol.4 (1), p.34-343

2012

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Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Nature communications, 2016-08, Vol.7 (1), p.12373-12373, Article 12373

2016

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Impact of the Counter‐Electrode Material on Redox Processes in Resistive Switching Memories

ChemElectroChem, 2014-08, Vol.1 (8), p.1287-1292

2014

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Nanobattery Effect in RRAMs-Implications on Device Stability and Endurance

IEEE electron device letters, 2014-02, Vol.35 (2), p.208-210

2014

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Metal Oxides for Non-Volatile Memory: Materials, Technology and Applications

1, 2022

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Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells

Nanoscale, 2013-03, Vol.5 (5), p.1781-1784

2013

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Optically accessible memristive devices

Nanophotonics (Berlin, Germany), 2019-10, Vol.8 (10), p.1579-1589

2019

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Catalyst Interface Engineering for Improved 2D Film Lift-Off and Transfer

ACS applied materials & interfaces, 2016-12, Vol.8 (48), p.33072-33082

2016

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An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

Nanoscale, 2013-06, Vol.5 (11), p.5119-5128

2013

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Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells

IEEE transactions on nanotechnology, 2015-05, Vol.14 (3), p.505-512

2015

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Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges

Advanced materials (Weinheim), 2023-09, Vol.35 (37), p.e2301924

2023

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Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Advanced materials (Weinheim), 2022-08, Vol.34 (32), p.e2201248-n/a

2022

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Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

MRS proceedings, 2011, Vol.1330 (1)

2011

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Nanoparticle Dynamics in Oxide‐Based Memristive Devices

Physica status solidi. A, Applications and materials science, 2020-03, Vol.217 (6), p.n/a

2020

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SiO2 based conductive bridging random access memory

Journal of electroceramics, 2017-12, Vol.39 (1-4), p.109-131

2017

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Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications (Adv. Mater. 32/2022)

Advanced materials (Weinheim), 2022-08, Vol.34 (32), p.n/a

2022

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Infrared-laser based characterization of the pyroelectricity in AlScN thin-films

Thin solid films, 2019-12, Vol.692, p.137623, Article 137623

2019

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Redox and mass transport phenomena in resistively switching thin films

Tappertzhofen, Stefan

2014

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Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory

Advanced materials (Weinheim), 2012-08, Vol.24 (33), p.4552-4556

2012

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Redox Reactions at Cu,Ag/Ta sub(2)O sub(5) Interfaces and the Effects of Ta sub(2)O sub(5) Film Density on the Forming Process in Atomic Switch Structures

Advanced functional materials, 2015-10, Vol.25 (40), p.6374-6381

2015

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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

Switching kinetics of electrochemical metallization memory cells

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Impact of the Counter‐Electrode Material on Redox Processes in Resistive Switching Memories

Nanobattery Effect in RRAMs-Implications on Device Stability and Endurance

Metal Oxides for Non-Volatile Memory: Materials, Technology and Applications

Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells

Optically accessible memristive devices

Catalyst Interface Engineering for Improved 2D Film Lift-Off and Transfer

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells

Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

Nanoparticle Dynamics in Oxide‐Based Memristive Devices

SiO2 based conductive bridging random access memory

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications (Adv. Mater. 32/2022)

Infrared-laser based characterization of the pyroelectricity in AlScN thin-films

Redox and mass transport phenomena in resistively switching thin films

Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory

Redox Reactions at Cu,Ag/Ta sub(2)O sub(5) Interfaces and the Effects of Ta sub(2)O sub(5) Film Density on the Forming Process in Atomic Switch Structures

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