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Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications

Crystals (Basel), 2020-12, Vol.10 (12), p.1153

Ťapajna, Milan

2020

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Angular dependence of nanofriction of mono- and few-layer MoSe2

Applied surface science, 2021-11, Vol.567, p.150807, Article 150807

2021

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Phase‐Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films

Small (Weinheim an der Bergstrasse, Germany), 2024-05, Vol.20 (21), p.e2309961-n/a

2024

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Control of Threshold Voltage in GaN Based Metal--Oxide--Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN08-08JN08-5

2013

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Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-07, Vol.41 (4)

2023

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Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe2

Applied surface science, 2022-12, Vol.605, p.154883, Article 154883

2022

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Vertical GaN Transistor with Semi‐Insulating Channel

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Nanofriction Properties of Mono- and Double-Layer Ti3C2Tx MXenes

ACS applied materials & interfaces, 2022-08, Vol.14 (32), p.36815-36824

2022

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Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2793-2801

2014

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Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates

Thin solid films, 2019-02, Vol.672, p.114-119

2019

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Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2018-12, Vol.215 (24), p.n/a

2018

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Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD

Materials science in semiconductor processing, 2023-03, Vol.156, p.107289, Article 107289

2023

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Self-Heating in GaN Transistors Designed for High-Power Operation

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3429-3434

2014

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IEEE_Xplore

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

Microelectronics and reliability, 2011-02, Vol.51 (2), p.195-200

2011

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On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

Physica status solidi. A, Applications and materials science, 2012-02, Vol.209 (2), p.386-389

2012

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Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

IEEE electron device letters, 2010-07, Vol.31 (7), p.662-664

2010

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IEEE_Xplore

The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability

Microelectronics and reliability, 2012, Vol.52 (1), p.29-32

2012

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Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Physica status solidi. A, Applications and materials science, 2012-12, Vol.209 (12), p.2646-2652

2012

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Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD

Materials, 2023-01, Vol.16 (1), p.20

2023

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Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

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Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Applied surface science, 2018-12, Vol.461, p.48-53

2018

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Friction control by engineering the crystallographic orientation of the lubricating few-layer MoS2 films

Applied surface science, 2021-02, Vol.540, p.148328, Article 148328

2021

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Determining the generation lifetime in a MOS capacitor using linear sweep techniques

Solid-state electronics, 2004-12, Vol.48 (12), p.2339-2342

2004

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Invited: Polarization engineering in GaN-based normally-off transistors

2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK), 2021, p.1-4

2021

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Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications

Angular dependence of nanofriction of mono- and few-layer MoSe2

Phase‐Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films

Control of Threshold Voltage in GaN Based Metal--Oxide--Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe2

Vertical GaN Transistor with Semi‐Insulating Channel

Nanofriction Properties of Mono- and Double-Layer Ti3C2Tx MXenes

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates

Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors

Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD

Self-Heating in GaN Transistors Designed for High-Power Operation

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Friction control by engineering the crystallographic orientation of the lubricating few-layer MoS2 films

Determining the generation lifetime in a MOS capacitor using linear sweep techniques

Invited: Polarization engineering in GaN-based normally-off transistors

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