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Doping-free complementary WSe2 circuit via van der Waals metal integration

Nature communications, 2020-04, Vol.11 (1), p.1866-1866, Article 1866

2020

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Efficient strain modulation of 2D materials via polymer encapsulation

Nature communications, 2020-03, Vol.11 (1), p.1151-1151, Article 1151

2020

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Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors

Nature communications, 2020-08, Vol.11 (1), p.4266-4266, Article 4266

2020

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Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures

Nature communications, 2021-03, Vol.12 (1), p.1825-1825, Article 1825

2021

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van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe2 and WS2

Advanced functional materials, 2019-03, Vol.29 (12), p.n/a

2019

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Strain‐Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS2

Small (Weinheim an der Bergstrasse, Germany), 2022-04, Vol.18 (14), p.e2107104-n/a

2022

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Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Nature communications, 2023-04, Vol.14 (1), p.2340-2340, Article 2340

2023

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Synthesis of 2D α‐GeTe Single Crystals and α‐GeTe/WSe2 Heterostructures with Enhanced Electronic Performance

Advanced functional materials, 2022-08, Vol.32 (35), p.n/a

2022

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High‐Resolution Van der Waals Stencil Lithography for 2D Transistors

Small (Weinheim an der Bergstrasse, Germany), 2021-07, Vol.17 (29), p.e2101209-n/a

2021

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Wafer-scale and universal van der Waals metal semiconductor contact

Nature communications, 2023-02, Vol.14 (1), p.1014-1014, Article 1014

2023

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Low voltage and robust InSe memristor using van der Waals electrodes integration

International Journal of Extreme Manufacturing, 2021-10, Vol.3 (4), p.45103

2021

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Ultrashort vertical-channel MoS2 transistor using a self-aligned contact

Nature communications, 2024-01, Vol.15 (1), p.165-165, Article 165

2024

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Thickness‐Dependent Topological Hall Effect in 2D Cr5Si3 Nanosheets with Noncollinear Magnetic Phase

Advanced materials (Weinheim), 2023-04, Vol.35 (16), p.n/a

2023

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High-density vertical sidewall MoS2 transistors through T-shape vertical lamination

Nature communications, 2024-07, Vol.15 (1), p.5774-7, Article 5774

2024

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Large-scale sub-5-nm vertical transistors by van der Waals integration

Nature communications, 2024-09, Vol.15 (1), p.7676-8, Article 7676

2024

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Synthesis of Ultrathin 2D Nonlayered α‐MnSe Nanosheets, MnSe/WS2 Heterojunction for High‐Performance Photodetectors

Small structures, 2021-08, Vol.2 (8), p.n/a

2021

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Microfluidic solution-processed organic and perovskite nanowires fabricated for field-effect transistors and photodetectors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-02, Vol.8 (7), p.2353-2362

2020

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van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe 2 and WS 2

Advanced functional materials, 2019-03, Vol.29 (12)

2019

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Realizing On/Off Ratios over 104 for Sub‑2 nm Vertical Transistors

Nano letters, 2023-09, Vol.23 (17), p.8303-8309

2023

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Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

Nature electronics, 2021-05, Vol.4 (5), p.342-347

2021

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Mobility Enhancement of Strained MoS2 Transistor on Flat Substrate

ACS nano, 2023-08, Vol.17 (15), p.14954-14962

2023

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Realizing On/Off Ratios over 10 4 for Sub-2 nm Vertical Transistors

Nano letters, 2023-09, Vol.23 (17), p.8303-8309

2023

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Monolithic three-dimensional tier-by-tier integration via van der Waals lamination

Nature (London), 2024-06, Vol.630 (8016), p.340-345N

2024

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Mobility Enhancement of Strained MoS 2 Transistor on Flat Substrate

ACS nano, 2023-08, Vol.17 (15), p.14954-14962

2023

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Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers

ACS nano, 2024-01, Vol.18 (1), p.1195-1203

2024

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Doping-free complementary WSe2 circuit via van der Waals metal integration

Efficient strain modulation of 2D materials via polymer encapsulation

Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors

Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures

van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe2 and WS2

Strain‐Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS2

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Synthesis of 2D α‐GeTe Single Crystals and α‐GeTe/WSe2 Heterostructures with Enhanced Electronic Performance

High‐Resolution Van der Waals Stencil Lithography for 2D Transistors

Wafer-scale and universal van der Waals metal semiconductor contact

Low voltage and robust InSe memristor using van der Waals electrodes integration

Ultrashort vertical-channel MoS2 transistor using a self-aligned contact

Thickness‐Dependent Topological Hall Effect in 2D Cr5Si3 Nanosheets with Noncollinear Magnetic Phase

High-density vertical sidewall MoS2 transistors through T-shape vertical lamination

Large-scale sub-5-nm vertical transistors by van der Waals integration

Synthesis of Ultrathin 2D Nonlayered α‐MnSe Nanosheets, MnSe/WS2 Heterojunction for High‐Performance Photodetectors

Microfluidic solution-processed organic and perovskite nanowires fabricated for field-effect transistors and photodetectors

van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe 2 and WS 2

Realizing On/Off Ratios over 104 for Sub‑2 nm Vertical Transistors

Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

Mobility Enhancement of Strained MoS2 Transistor on Flat Substrate

Realizing On/Off Ratios over 10 4 for Sub-2 nm Vertical Transistors

Monolithic three-dimensional tier-by-tier integration via van der Waals lamination

Mobility Enhancement of Strained MoS 2 Transistor on Flat Substrate

Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers

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