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A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2017-12, Vol.65 (12), p.5113-5122

2017

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Synthesis and host-guest properties of pillar[6]arenes

Science China. Chemistry, 2012-02, Vol.55 (2), p.223-228

2012

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A Dual Power Mode GaN Doherty Power Amplifier Based on Cascode Transistors

IEEE microwave and wireless components letters, 2022-05, Vol.32 (5), p.414-417

2022

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Synthesis and Conformational Properties of Nonsymmetric Pillar[5]arenes and Their Acetonitrile Inclusion Compounds

European Journal of Organic Chemistry, 2010-11, Vol.2010 (33), p.6464-6470

2010

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A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

Frontiers of information technology & electronic engineering, 2022-02, Vol.23 (2), p.346-350

2022

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Design of a highly efficient reconfigurable C/X dual‐band 15W GaN MMIC power amplifier using amplifier‐switch fusion technique

Microwave and optical technology letters, 2024-07, Vol.66 (7), p.n/a

2024

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A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

Journal of semiconductors, 2015-12, Vol.36 (12), p.124-127

戈勤陶洪琪余旭明

2015

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K-Band Digital Power Amplifier Based on InP DHBT

Journal of physics. Conference series, 2022-09, Vol.2343 (1), p.12013

2022

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High-Power Ka/Ku Dual-Wideband GaN Power Amplifier With High Input Isolation and Transformer-Combined Load Design

IEEE microwave and wireless components letters, 2021-01, Vol.31 (1), p.49-51

2021

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Efficient synthesis of copillar[5]arenes and their host-guest properties with dibromoalkanes

Organic & biomolecular chemistry, 2011-10, Vol.9 (20), p.7007-7010

2011

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A 2-18 GHz Dual-Mode GaN Power Amplifier Based on Distributed Structure

IEEE microwave and wireless technology letters (Print), 2024-06, Vol.34 (6), p.651-654

2024

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A Yield-Improvement Method for Millimeter-Wave GaN MMIC Power Amplifier Design Based on Load-Pull Analysis

IEEE transactions on microwave theory and techniques, 2021-08, Vol.69 (8), p.3883-3895

2021

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Terahertz On-Chip Aperture Antenna with Through Substrate Vias for Enhanced Gain and Chip-Size Insensitivity in InP Technology

IEEE transactions on antennas and propagation, 2023-09, Vol.71 (9), p.1-1

2023

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A Current-Reused Ultralow-Power IoT LNA With a Robust Linearization Technique

IEEE microwave and wireless technology letters (Print), 2023-12, Vol.33 (12), p.1634-1637

2023

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A W-Band High Isolation Single-Balanced Mixer in GaN HEMT Technology

Progress in electromagnetics research. Letters, 2022-02, Vol.103, p.1

2022

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A W-BAND HIGH ISOLATION SINGLE-BALANCED MIXER IN GAN HEMT TECHNOLOGY

Progress in electromagnetics research. Letters, 2022, Vol.103, p.7-14

2022

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A 28 GHz fully integrated GaN enhanced single‐sideband time‐modulated MMIC for phased array system

Microwave and optical technology letters, 2023-09, Vol.65 (9), p.2543-2548

2023

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A 28GHz fully integrated GaN enhanced single‐sideband time‐modulated MMIC for phased array system

Microwave and optical technology letters, 2023-09, Vol.65 (9), p.2543-2548

2023

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Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W

IEEE microwave and wireless technology letters (Print), 2024-05, Vol.34 (5), p.532-535

2024

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Accurate on Wafer Calibration and S-parameter Measurement Setup for InP-based HEMT Devices to 220 GHz

Progress in electromagnetics research M Pier M, 2024, Vol.126, p.99-106

2024

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A Ku-Band 100-W High-Power Amplifier MMIC Using 0.2- \mu m GaN Technology

IEEE microwave and wireless technology letters (Print), 2024-01, p.1-4

2024

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A Ku -Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology

IEEE microwave and wireless technology letters (Print), 2024-01, Vol.34 (1), p.80-83

2024

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A novel method to dynamic thermal impedance and channel temperature extraction of GaN HEMTs

International journal of numerical modelling, 2020-05, Vol.33 (3), p.n/a

2020

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100 mW G-band MMIC Power Amplifier Based on 50nm GaN HEMT Technology

2022 Photonics & Electromagnetics Research Symposium (PIERS), 2022, p.748-751

2022

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Inorganic-Base-Catalysed Synthesis of α,β-Unsaturated Ketones and 3,5-Disubstituted Cyclohex-2-en-1-ones

Asian journal of organic chemistry, 2014-05, Vol.3 (5), p.644-648

2014

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A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

Synthesis and host-guest properties of pillar[6]arenes

A Dual Power Mode GaN Doherty Power Amplifier Based on Cascode Transistors

Synthesis and Conformational Properties of Nonsymmetric Pillar[5]arenes and Their Acetonitrile Inclusion Compounds

A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

Design of a highly efficient reconfigurable C/X dual‐band 15W GaN MMIC power amplifier using amplifier‐switch fusion technique

A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

K-Band Digital Power Amplifier Based on InP DHBT

High-Power Ka/Ku Dual-Wideband GaN Power Amplifier With High Input Isolation and Transformer-Combined Load Design

Efficient synthesis of copillar[5]arenes and their host-guest properties with dibromoalkanes

A 2-18 GHz Dual-Mode GaN Power Amplifier Based on Distributed Structure

A Yield-Improvement Method for Millimeter-Wave GaN MMIC Power Amplifier Design Based on Load-Pull Analysis

Terahertz On-Chip Aperture Antenna with Through Substrate Vias for Enhanced Gain and Chip-Size Insensitivity in InP Technology

A Current-Reused Ultralow-Power IoT LNA With a Robust Linearization Technique

A W-Band High Isolation Single-Balanced Mixer in GaN HEMT Technology

A W-BAND HIGH ISOLATION SINGLE-BALANCED MIXER IN GAN HEMT TECHNOLOGY

A 28 GHz fully integrated GaN enhanced single‐sideband time‐modulated MMIC for phased array system

A 28GHz fully integrated GaN enhanced single‐sideband time‐modulated MMIC for phased array system

Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W

Accurate on Wafer Calibration and S-parameter Measurement Setup for InP-based HEMT Devices to 220 GHz

A Ku-Band 100-W High-Power Amplifier MMIC Using 0.2- \mu m GaN Technology

A Ku -Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology

A novel method to dynamic thermal impedance and channel temperature extraction of GaN HEMTs

100 mW G-band MMIC Power Amplifier Based on 50nm GaN HEMT Technology

Inorganic-Base-Catalysed Synthesis of α,β-Unsaturated Ketones and 3,5-Disubstituted Cyclohex-2-en-1-ones

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