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Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

IEEE photonics journal, 2013-04, Vol.5 (2), p.2600111-2600111

2013

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Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

IEEE photonics journal, 2013-04, Vol.5 (2), p.2201011-2201011

2013

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Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1066-1072

2009

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Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1104-1114

2009

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IEEE_Xplore

Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

IEEE journal of quantum electronics, 2009-01, Vol.45 (1), p.66-78

2009

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IEEE_Xplore

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1218-1225

2009

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IEEE_Xplore

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

IEEE journal of quantum electronics, 2008-06, Vol.44 (6), p.573-580

2008

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IEEE_Xplore

Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

IEEE photonics technology letters, 2002-04, Vol.14 (4), p.444-446

2002

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IEEE_Xplore

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

IET optoelectronics, 2009-12, Vol.3 (6), p.283-295

2009

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High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1220-1227

2003

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IEEE_Xplore

High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers

IEEE photonics technology letters, 2001-03, Vol.13 (3), p.179-181

2001

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IEEE_Xplore

The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers

IEEE photonics technology letters, 2005-09, Vol.17 (9), p.1779-1781

2005

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IEEE_Xplore

(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm

Applied physics letters, 2003-10, Vol.83 (14), p.2742-2744

2003

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Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

Journal of display technology, 2013-04, Vol.9 (4), p.212-225

2013

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IEEE_Xplore

Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

IEEE photonics technology letters, 2002-08, Vol.14 (8), p.1052-1054

2002

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IEEE_Xplore

InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers

Journal of applied physics, 2004-10, Vol.96 (8), p.4653-4655

2004

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FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays

Journal of display technology, 2013-05, Vol.9 (5), p.317-323

2013

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IEEE_Xplore

Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

IEEE photonics journal, 2012-12, Vol.4 (6), p.2382-2389

2012

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MOCVD-Grown Dilute Nitride Type II Quantum Wells

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.979-991

2008

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IEEE_Xplore

Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions

IEEE journal of quantum electronics, 2003-10, Vol.39 (10), p.1205-1210

2003

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IEEE_Xplore

Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Journal of crystal growth, , Vol.287 (2), p.615-619

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Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAs-GaAs Quantum-Well Lasers

IEEE journal of quantum electronics, 2008-08, Vol.44 (8), p.732-739

2008

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IEEE_Xplore

Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory

Applied physics letters, 2005-05, Vol.86 (20), p.201117-201117-3

2005

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Current injection efficiency of InGaAsN quantum-well lasers

Journal of applied physics, 2005-03, Vol.97 (5), p.054502-054502-18

2005

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First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

Journal of display technology, 2013-04, Vol.9 (4), p.272-279

2013

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IEEE_Xplore

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Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm

Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition

High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers

The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers

(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm

Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers

FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays

Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

MOCVD-Grown Dilute Nitride Type II Quantum Wells

Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions

Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAs-GaAs Quantum-Well Lasers

Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory

Current injection efficiency of InGaAsN quantum-well lasers

First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

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