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Structural studies of reactively sputtered carbon nitride thin films

Thin solid films, 1995-02, Vol.256 (1), p.44-47

1995

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Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

Applied surface science, 2004-05, Vol.230 (1), p.18-23

2004

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Growth and structure of CN thin films prepared by radio frequency reactive sputtering

Solid state communications, 1993-12, Vol.88 (10), p.803-806

1993

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An instrumental solution to the phenomenon of negative capacitances in semiconductors

Solid-state electronics, 1996-03, Vol.39 (3), p.333-336

1996

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The growth and properties of group III nitrides

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.892-896

1995

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Optical and electrical properties of InN grown by radio-frequency reactive sputtering

Journal of crystal growth, 2002-05, Vol.241 (1), p.165-170

2002

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Defects, optical absorption and electron mobility in indium and gallium nitrides

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.190-198

1993

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Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500°C

Journal of crystal growth, 1996-03, Vol.160 (3), p.201-206

1996

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Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Solid state communications, 2006-04, Vol.138 (1), p.26-29

2006

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Auger investigation of group III nitride films grown by molecular beam epitaxy

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.340-343

1995

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InN, latest development and a review of the band-gap controversy

Superlattices and microstructures, 2005-07, Vol.38 (1), p.1-37

2005

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High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

Thin solid films, 2006-02, Vol.496 (2), p.342-345

2006

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High-resolution X-ray photoelectron spectroscopy of Al Ga1−Sb

Applied surface science, 2004-05, Vol.229 (1-4), p.263-267

2004

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Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers

Journal of crystal growth, 2002-12, Vol.246 (3), p.237-243

2002

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Piezoelectricity in indium nitride

Journal of crystal growth, 2004-08, Vol.269 (1), p.72-76

2004

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Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Journal of crystal growth, 2002-03, Vol.236 (4), p.621-626

2002

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High-resolution X-ray photoelectron spectroscopy of AlxGa1−xSb

Applied surface science, 2004-05, Vol.229 (1-4), p.263-267

2004

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Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition

Materials chemistry and physics, 2003-07, Vol.81 (1), p.8-10

2003

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The effect of target nitridation on structural properties of InN grown by radio-frequency reactive sputtering

Thin solid films, 2002-12, Vol.422 (1), p.28-32

2002

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Conduction mechanism in sputtered polycrystalline zinc oxide thin films

Thin solid films, 1984-01, Vol.117 (1), p.19-32

1984

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Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Materials letters, 2004, Vol.58 (1), p.80-83

2004

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Characterisation of undoped gallium antimonide grown by metalorganic chemical vapour deposition

The Journal of physics and chemistry of solids, 2000-04, Vol.61 (4), p.537-544

2000

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Electron mobility in InO.53GaO.47As as a function of concentration and temperature

Microelectronics, 1995-10, Vol.26 (7), p.653-657

1995

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Tunnelling transport in Al-n-GaSb Schottky diodes

IEEE transactions on electron devices, 1998-10, Vol.45 (10), p.2247-2248

1998

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Studies of the Plasma Related Oxygen Contamination of Gallium Nitride Grown by Remote Plasma Enhanced Chemical Vapour Deposition

Physica status solidi. C, 2003 (1), p.156-160

2003

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Structural studies of reactively sputtered carbon nitride thin films

Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

Growth and structure of CN thin films prepared by radio frequency reactive sputtering

An instrumental solution to the phenomenon of negative capacitances in semiconductors

The growth and properties of group III nitrides

Optical and electrical properties of InN grown by radio-frequency reactive sputtering

Defects, optical absorption and electron mobility in indium and gallium nitrides

Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500°C

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Auger investigation of group III nitride films grown by molecular beam epitaxy

InN, latest development and a review of the band-gap controversy

High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

High-resolution X-ray photoelectron spectroscopy of Al Ga1−Sb

Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers

Piezoelectricity in indium nitride

Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

High-resolution X-ray photoelectron spectroscopy of AlxGa1−xSb

Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition

The effect of target nitridation on structural properties of InN grown by radio-frequency reactive sputtering

Conduction mechanism in sputtered polycrystalline zinc oxide thin films

Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Characterisation of undoped gallium antimonide grown by metalorganic chemical vapour deposition

Electron mobility in InO.53GaO.47As as a function of concentration and temperature

Tunnelling transport in Al-n-GaSb Schottky diodes

Studies of the Plasma Related Oxygen Contamination of Gallium Nitride Grown by Remote Plasma Enhanced Chemical Vapour Deposition

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