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Polar vibration spectra of interface optical phonons and electron-interface optical phonon interactions in a wurtzite GaN-AlN nanowire

Physical review. B, Condensed matter and materials physics, 2005-06, Vol.71 (24), p.245324.1-245324.9, Article 245324

2005

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Electron mobilities in gallium, indium, and aluminum nitrides

Journal of applied physics, 1994-06, Vol.75 (11), p.7365-7372

1994

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Optical and electrical properties of InN grown by radio-frequency reactive sputtering

Journal of crystal growth, 2002-05, Vol.241 (1), p.165-170

2002

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Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Solid state communications, 2006-04, Vol.138 (1), p.26-29

2006

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Optical band gap of indium nitride

Journal of applied physics, 1986-05, Vol.59 (9), p.3241-3244

1986

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High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

Thin solid films, 2006-02, Vol.496 (2), p.342-345

2006

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Structural studies of reactively sputtered carbon nitride thin films

Thin solid films, 1995-02, Vol.256 (1), p.44-47

1995

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Piezoelectricity in indium nitride

Journal of crystal growth, 2004-08, Vol.269 (1), p.72-76

2004

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Elemental composition and microstructure of reactively sputtered carbon nitride thin films

Journal of applied physics, 1994-10, Vol.76 (7), p.4390-4392

1994

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Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition

Materials chemistry and physics, 2003-07, Vol.81 (1), p.8-10

2003

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InN, latest development and a review of the band-gap controversy

Superlattices and microstructures, 2005-07, Vol.38 (1), p.1-37

2005

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Crystal size and oxygen segregation for polycrystalline GaN

Journal of applied physics, 2002-09, Vol.92 (6), p.3397-3403

2002

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Variable range hopping in polypyrrole films of a range of conductivities and preparation methods

Journal of applied physics, 1992-11, Vol.72 (10), p.4677-4682

1992

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Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers

Journal of crystal growth, 2002-12, Vol.246 (3), p.237-243

2002

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Point-defect energies in the nitrides of aluminum, gallium, and indium

Physical review. B, Condensed matter, 1992-05, Vol.45 (19), p.10942-10950

1992

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Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

Applied surface science, 2004-05, Vol.230 (1), p.18-23

2004

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Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AlN Thin Films

Japanese Journal of Applied Physics, 1995-08, Vol.34 (8R), p.4154

1995

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Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Journal of crystal growth, 2002-03, Vol.236 (4), p.621-626

2002

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Laser-induced chemical vapor deposition of AlN films

Journal of applied physics, 1990, Vol.68 (10), p.5369-5371

1990

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Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Materials letters, 2004, Vol.58 (1), p.80-83

2004

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Conductivity degradation in oxygen-aged polypyrrole

Journal of applied physics, 1991-06, Vol.69 (11), p.7711-7713

1991

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Nitrogen-rich indium nitride

Journal of applied physics, 2004-06, Vol.95 (11), p.6124-6128

2004

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Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition

Journal of electronic materials, 2001-08, Vol.30 (8), p.965-971

2001

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An instrumental solution to the phenomenon of negative capacitances in semiconductors

Solid-state electronics, 1996-03, Vol.39 (3), p.333-336

1996

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Structural characterization of reactively sputtered carbon nitride thin films with high nitrogen content

Journal of physics. D, Applied physics, 1995-11, Vol.28 (11), p.2335-2339

1995

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Polar vibration spectra of interface optical phonons and electron-interface optical phonon interactions in a wurtzite GaN-AlN nanowire

Electron mobilities in gallium, indium, and aluminum nitrides

Optical and electrical properties of InN grown by radio-frequency reactive sputtering

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Optical band gap of indium nitride

High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

Structural studies of reactively sputtered carbon nitride thin films

Piezoelectricity in indium nitride

Elemental composition and microstructure of reactively sputtered carbon nitride thin films

Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition

InN, latest development and a review of the band-gap controversy

Crystal size and oxygen segregation for polycrystalline GaN

Variable range hopping in polypyrrole films of a range of conductivities and preparation methods

Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers

Point-defect energies in the nitrides of aluminum, gallium, and indium

Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AlN Thin Films

Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Laser-induced chemical vapor deposition of AlN films

Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Conductivity degradation in oxygen-aged polypyrrole

Nitrogen-rich indium nitride

Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition

An instrumental solution to the phenomenon of negative capacitances in semiconductors

Structural characterization of reactively sputtered carbon nitride thin films with high nitrogen content

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