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Fully strained heavily carbon-doped GaAs grown by gas-source molecular beam epitaxy using carbontetrabromide and its application to InGaP/GaAs heterojunction bipolar transistors

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1866-1868

1997

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Stress effect on current-induced degradation of Be-doped AlGaAs/GaAs heterojunction bipolar transistors

Japanese Journal of Applied Physics, 1992-03, Vol.31 (3), p.751-756

1992

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Investigation of Thermal Stability in Multifinger GaInP/GaAs Collector-Up Tunneling-Collector HBTs With Subtransistor Via-Hole Structure

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1759-1767

2006

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IEEE_Xplore

InGaP/GaAs sub-square-micron emitter HBT with fmax >100 GHz

Japanese journal of applied physics, 1997, Vol.36 (3B), p.1799-1803

1997

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Very-high-speed InP/InGaAs HBT ICs for optical transmission systems

IEEE journal of solid-state circuits, 1998-09, Vol.33 (9), p.1313-1320

1998

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IEEE_Xplore

Switch-less-impedance-matching type W-CDMA power amplifier with improved efficiency and linearity under low power operation

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.665-668

2005

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IEEE_Xplore

Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level

Japanese Journal of Applied Physics, 1999-02, Vol.38 (2S), p.1195

1999

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Heavily carbon-doped InGaP/GaAs HBT's with buried polycrystalline GaAs under the base electrode

IEEE transactions on electron devices, 1998-11, Vol.45 (11), p.2268-2275

1998

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IEEE_Xplore

Measurement of the recombination velocity at single crystalline/polycrystalline GaAs interfaces using time-resolved photoluminescence

Applied physics letters, 1995-04, Vol.66 (16), p.2092-2094

1995

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High-speed InGaP/GaAs transistors with a sidewall base contact structure

IEEE electron device letters, 1997-11, Vol.18 (11), p.562-564

1997

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IEEE_Xplore

Polycrystal isolation of InGaP/GaAs HBTs to reduce collector capacitance

IEEE electron device letters, 1998-02, Vol.19 (2), p.47-49

1998

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IEEE_Xplore

InGaP/GaAs Sub-Square-Micron Emitter HBT with f max > 100 GHz

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3S), p.1799

1997

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Effect of source-supply interruptions on the interface abruptness in gas source molecular beam epitaxy grown InGaAs/InP heterostructures

Journal of crystal growth, 1995, Vol.150 (1-4), p.591-596

1995

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Self-aligned InP/InGaAs HBTs using T-shaped emitter electrodes

Microwave and optical technology letters, 1996-02, Vol.11 (3), p.159-163

1996

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Passivation of InP-based heterostructure bipolar transistors-relation to surface Fermi level

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.76-79

1998

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IEEE_Xplore

A new triple-well resonant tunneling diode with controllable double-negative resistance

IEEE transactions on electron devices, 1988-11, Vol.35 (11), p.1951-1956

1988

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IEEE_Xplore

Reduced gain variation against temperature with thermistor on HPA module for W-CDMA system

2006 Asia-Pacific Microwave Conference, 2006, p.1877-1880

2006

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IEEE_Xplore

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2307-2314

1989

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IEEE_Xplore

Design and Performances of a Triple (GaAs, Si, and Ge)- Solar-cell System with Multi-layered Spectrum Splitters

Japanese Journal of Applied Physics, 1981-01, Vol.20 (S2), p.127

1981

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A defined commensal consortium elicits CD8 T cells and anti-cancer immunity

Nature (London), 2019-01, Vol.565 (7741), p.600-605

2019

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Effectiveness of 18F-FDG PET/CT in finding lung metastasis from a retroperitoneal paraganglioma

Asia oceania journal of nuclear medicine and biology, 2024-01, Vol.12 (1), p.46-51

2024

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TH1 cell-inducing Escherichia coli strain identified from the small intestinal mucosa of patients with Crohn's disease

Gut microbes, 2020-11, Vol.12 (1), p.1788898-1788898

2020

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Post-approval study of a highly pulsed, low-shear-rate, continuous-flow, left ventricular assist device, EVAHEART: A Japanese multicenter study using J-MACS

The Journal of heart and lung transplantation, 2014-06, Vol.33 (6), p.599-608

2014

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Utility of non-contrast-enhanced magnetic resonance imaging in predicting preoperative clinical stage and prognosis in patients with thymic epithelial tumor

Japanese journal of radiology, 2023-03, Vol.41 (3), p.302-311

2023

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Human T-cell lymphotropic virus type 1 (HTLV-1)-associated bronchioloalveolar disorder required differentiation from fibrotic chronic hypersensitivity pneumonitis

Radiology case reports, 2022-07, Vol.17 (7), p.2448-2452

2022

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Fully strained heavily carbon-doped GaAs grown by gas-source molecular beam epitaxy using carbontetrabromide and its application to InGaP/GaAs heterojunction bipolar transistors

Stress effect on current-induced degradation of Be-doped AlGaAs/GaAs heterojunction bipolar transistors

Investigation of Thermal Stability in Multifinger GaInP/GaAs Collector-Up Tunneling-Collector HBTs With Subtransistor Via-Hole Structure

InGaP/GaAs sub-square-micron emitter HBT with fmax >100 GHz

Very-high-speed InP/InGaAs HBT ICs for optical transmission systems

Switch-less-impedance-matching type W-CDMA power amplifier with improved efficiency and linearity under low power operation

Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level

Heavily carbon-doped InGaP/GaAs HBT's with buried polycrystalline GaAs under the base electrode

Measurement of the recombination velocity at single crystalline/polycrystalline GaAs interfaces using time-resolved photoluminescence

High-speed InGaP/GaAs transistors with a sidewall base contact structure

Polycrystal isolation of InGaP/GaAs HBTs to reduce collector capacitance

InGaP/GaAs Sub-Square-Micron Emitter HBT with f max > 100 GHz

Effect of source-supply interruptions on the interface abruptness in gas source molecular beam epitaxy grown InGaAs/InP heterostructures

Self-aligned InP/InGaAs HBTs using T-shaped emitter electrodes

Passivation of InP-based heterostructure bipolar transistors-relation to surface Fermi level

A new triple-well resonant tunneling diode with controllable double-negative resistance

Reduced gain variation against temperature with thermistor on HPA module for W-CDMA system

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Design and Performances of a Triple (GaAs, Si, and Ge)- Solar-cell System with Multi-layered Spectrum Splitters

A defined commensal consortium elicits CD8 T cells and anti-cancer immunity

Effectiveness of 18F-FDG PET/CT in finding lung metastasis from a retroperitoneal paraganglioma

TH1 cell-inducing Escherichia coli strain identified from the small intestinal mucosa of patients with Crohn's disease

Post-approval study of a highly pulsed, low-shear-rate, continuous-flow, left ventricular assist device, EVAHEART: A Japanese multicenter study using J-MACS

Utility of non-contrast-enhanced magnetic resonance imaging in predicting preoperative clinical stage and prognosis in patients with thymic epithelial tumor

Human T-cell lymphotropic virus type 1 (HTLV-1)-associated bronchioloalveolar disorder required differentiation from fibrotic chronic hypersensitivity pneumonitis

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