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Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Nature photonics, 2012-02, Vol.6 (2), p.121-126

2012

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Nano-antenna in a photoconductive photomixer for highly efficient continuous wave terahertz emission

Scientific reports, 2013-10, Vol.3 (1), p.2824-2824, Article 2824

2013

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A Study of Interaction Between hWJ-MSCs and SiO2-Coated PDMS Micropattern

Journal of physics. Conference series, 2021-04, Vol.1893 (1)

2021

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Polarization dependent state to polarization independent state change in THz metamaterials

Applied physics letters, 2011-11, Vol.99 (22), p.221102-221102-3

2011

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Micromachined switchable metamaterial with dual resonance

Applied physics letters, 2012-10, Vol.101 (15)

2012

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N95 respirator decontamination: a study in reusability

Materials today advances, 2021-09, Vol.11, p.100148-100148, Article 100148

2021

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76: ASSESSING MASK INTEGRITY AND FIT OF N95 MASKS AFTER 5 CYCLES OF DECONTAMINATION AND REUSE IN A SIMULATED CLINICAL SETTING

Journal of global antimicrobial resistance., 2022-12, Vol.31, p.S46-S47

2022

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Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate

Journal of crystal growth, 2011-05, Vol.323 (1), p.426-430

2011

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Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.152-156

2006

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The coloration and degradation mechanisms of electrochromic nickel oxide

Solar energy materials and solar cells, 2013-09, Vol.116, p.83-88

2013

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Structural and optical properties of stacked self-assembled InAs∕InGaAs quantum dots on graded Si1−xGex∕Si substrate

Applied physics letters, 2008-05, Vol.92 (21)

2008

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Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature

Journal of crystal growth, 2011-05, Vol.323 (1), p.167-171

2011

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Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1−xGex/Si substrate

Journal of physics. D, Applied physics, 2009-02, Vol.42 (3), p.035303-035303 (4)

2009

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A Study of Interaction Between hWJ-MSCs and SiO 2 -Coated PDMS Micropattern

Journal of physics. Conference series, 2021-04, Vol.1893 (1), p.12010

2021

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Resonance Switchable Metamaterials Using MEMS Fabrications

IEEE journal of selected topics in quantum electronics, 2013-05, Vol.19 (3), p.4700306-4700306

2013

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InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

Electronics letters, 2008-01, Vol.44 (3), p.243-244

2008

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Selective electroless silver plating of three dimensional SU-8 microstructures on silicon for metamaterials applications

Optical materials express, 2011-12, Vol.1 (8), p.1548-1554

2011

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Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate

Applied physics letters, 2009-10, Vol.95 (14)

2009

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Retraction: Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Nature photonics, 2013-04, Vol.7 (4), p.334

2013

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Retraction Note: Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Nature photonics, 2013-03, Vol.7 (4), p.336-344

2013

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Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate

Applied physics letters, 2009-08, Vol.95 (5)

2009

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Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate

Applied physics letters, 2009-10, Vol.95 (14), p.141905-141905-3

2009

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Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si sub(1-xGe) sub(x)/Si substrate

Journal of crystal growth, 2011-05, Vol.323 (1), p.426-430

2011

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Characterization of GaAs grown on SiGe/Si graded substrates using p - n junction diodes

Journal of applied physics, 2008-10, Vol.104 (7), p.073710-073710-6

2008

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Origin and suppression of V-shaped defects in the cappingof self-assembled InAs quantum dots on graded Si 1 − x Ge x / Si substrate

Applied physics letters, 2009-08, Vol.95 (5), p.052111-052111-3

2009

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Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Nano-antenna in a photoconductive photomixer for highly efficient continuous wave terahertz emission

A Study of Interaction Between hWJ-MSCs and SiO2-Coated PDMS Micropattern

Polarization dependent state to polarization independent state change in THz metamaterials

Micromachined switchable metamaterial with dual resonance

N95 respirator decontamination: a study in reusability

76: ASSESSING MASK INTEGRITY AND FIT OF N95 MASKS AFTER 5 CYCLES OF DECONTAMINATION AND REUSE IN A SIMULATED CLINICAL SETTING

Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate

Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy

The coloration and degradation mechanisms of electrochromic nickel oxide

Structural and optical properties of stacked self-assembled InAs∕InGaAs quantum dots on graded Si1−xGex∕Si substrate

Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature

Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1−xGex/Si substrate

A Study of Interaction Between hWJ-MSCs and SiO 2 -Coated PDMS Micropattern

Resonance Switchable Metamaterials Using MEMS Fabrications

InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

Selective electroless silver plating of three dimensional SU-8 microstructures on silicon for metamaterials applications

Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate

Retraction: Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Retraction Note: Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate

Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate

Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si sub(1-xGe) sub(x)/Si substrate

Characterization of GaAs grown on SiGe/Si graded substrates using p - n junction diodes

Origin and suppression of V-shaped defects in the cappingof self-assembled InAs quantum dots on graded Si 1 − x Ge x / Si substrate

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