UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

Scientific reports, 2023-11, Vol.13 (1), p.19189-19189, Article 19189

2023

Volltextzugriff (PDF)

Tuning the sub-processes in laser reduction of graphene oxide by adjusting the power and scanning speed of laser

Carbon (New York), 2019-01, Vol.141, p.83-91

2019

Volltextzugriff (PDF)

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Thin solid films, 2011-07, Vol.519 (19), p.6443-6446

2011

Volltextzugriff (PDF)

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Scientific reports, 2017-12, Vol.7 (1), p.17734-11, Article 17734

2017

Volltextzugriff (PDF)

Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Applied physics letters, 2014-03, Vol.104 (11)

2014

Volltextzugriff (PDF)

Piezoresistive Effect of p-Type Single Crystalline 3C-SiC Thin Film

IEEE electron device letters, 2014-03, Vol.35 (3), p.399-401

2014

Volltextzugriff (PDF)

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

IEEE electron device letters, 2014-12, Vol.35 (12), p.1293-1295

2014

Volltextzugriff (PDF)

Effects of nitridation in gate oxides grown on 4H-SiC

Journal of applied physics, 2001-11, Vol.90 (10), p.5058-5063

2001

Volltextzugriff (PDF)

Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

IEEE electron device letters, 2018-08, Vol.39 (8), p.1145-1148

2018

Volltextzugriff (PDF)

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

Japanese Journal of Applied Physics, 2018-12, Vol.57 (12), p.124101

2018

Volltextzugriff (PDF)

Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-09, Vol.2 (35), p.7176-7179

2014

Volltextzugriff (PDF)

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

Applied physics express, 2015-06, Vol.8 (6), p.61303

2015

Volltextzugriff (PDF)

The fabrication and characterization of 4H-SiC power UMOSFETs

Chinese physics B, 2013-02, Vol.22 (2), p.426-428, Article 027302

宋庆文张玉明韩吉胜 Philip Tanner Sima Dimitrijev 张义门汤晓燕郭辉

2013

Volltextzugriff (PDF)

The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (6), p.1172-1176

2015

Volltextzugriff (PDF)

Environmental Rehabilitation Guide for South Africa: By Mike Mentis 2019, Quickfox Publishing, Milnerton, Cape Town, 7441, South Africa205 pages, softcoverISBN 9780639804934. Price R460.00

African journal of range & forage science, 2019-12, Vol.36 (4), p.204-206

Tanner, Philip

2019

Volltextzugriff (PDF)

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.468-474

2018

Volltextzugriff (PDF)

Influence of external mechanical stress on electrical properties of single-crystal n-3C-SiC/p-Si heterojunction diode

Applied physics express, 2015-06, Vol.8 (6), p.61302

2015

Volltextzugriff (PDF)

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Scientific reports, 2019-03, Vol.9 (1), p.3754-3754, Article 3754

2019

Volltextzugriff (PDF)

Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients

Solid-state electronics, 2024-05, Vol.215, p.108880, Article 108880

2024

Volltextzugriff (PDF)

Color Chart for Thin SiC Films Grown on Si Substrates

Materials science forum, 2013-01, Vol.740-742, p.279-282

2013

Volltextzugriff (PDF)

Demonstration of p-type 3C–SiC grown on 150mm Si(100) substrates by atomic-layer epitaxy at 1000°C

Journal of crystal growth, 2011-08, Vol.329 (1), p.67-70

2011

Volltextzugriff (PDF)

Chemically derived graphene quantum dots for high-strain sensing

Journal of materials science & technology, 2023-04, Vol.141, p.110-115

2023

Volltextzugriff (PDF)

The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1675-1680, Article 1675

2019

Volltextzugriff (PDF)

Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

Journal of applied physics, 1999-10, Vol.86 (8), p.4316-4321

1999

Volltextzugriff (PDF)

3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect

ACS applied materials & interfaces, 2019-10, Vol.11 (43), p.40980-40987

2019

Volltextzugriff (PDF)

1 – 25 von 347

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(292)
Mit Volltextzugriff
(289)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(347)

Erscheinungsjahr

n.n

Thema

Science & Technology
(225)
Life Sciences & Biomedicine
(134)
Humans
(79)
Technology
(64)
Physical Sciences
(54)
Female
(43)
Engineering
(39)
Male
(39)
Physics
(34)
Engineering, Electrical & Electronic
(27)
Adult
(26)
Materials Science
(26)
Physics, Applied
(26)
Silicon Carbide
(25)
Biological And Medical Sciences
(23)
Materials Science, Multidisciplinary
(23)
Science & Technology - Other Topics
(22)
Middle Aged
(19)
Environmental Sciences & Ecology
(18)
Animals
(17)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IngentaConnect Journals
(128)
Free E-Journal (出版社公開部分のみ）
(109)
MEDLINE
(102)
Journals@OVID
(79)
NUS Single-Journal Subscriptions
(62)
Wiley-Blackwell Full Collection
(52)
Elsevier ScienceDirect Journals Complete
(52)
IngentaConnect Journals
(48)
Wiley Online Library
(35)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(32)
JSTOR
(23)
IEEE Xplore
(23)
Taylor & Francis
(20)
Access via Taylor & Francis
(19)
Ebook Central Perpetual and DDA
(17)
eBooks on EBSCOhost
(16)
Springer Journals
(16)
Access via Taylor & Francis
(15)
SAGE Publications
(11)
Nature Journals
(10)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

Tuning the sub-processes in laser reduction of graphene oxide by adjusting the power and scanning speed of laser

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Piezoresistive Effect of p-Type Single Crystalline 3C-SiC Thin Film

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Effects of nitridation in gate oxides grown on 4H-SiC

Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

The fabrication and characterization of 4H-SiC power UMOSFETs

The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Environmental Rehabilitation Guide for South Africa: By Mike Mentis 2019, Quickfox Publishing, Milnerton, Cape Town, 7441, South Africa205 pages, softcoverISBN 9780639804934. Price R460.00

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

Influence of external mechanical stress on electrical properties of single-crystal n-3C-SiC/p-Si heterojunction diode

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients

Color Chart for Thin SiC Films Grown on Si Substrates

Demonstration of p-type 3C–SiC grown on 150mm Si(100) substrates by atomic-layer epitaxy at 1000°C

Chemically derived graphene quantum dots for high-strain sensing

The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes

Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect

Suchergebnisse filtern