UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 140

Sortiert nach

Control of impurity concentration in N‐polar (0001¯) GaN grown by metalorganic vapor phase epitaxy

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

Volltextzugriff (PDF)

Continuous-wave operation of InGaN tunable single-mode laser with periodically slotted structure

Applied physics express, 2024-08, Vol.17 (8), p.82003

2024

Volltextzugriff (PDF)

Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy

physica status solidi (b), 2023-08, Vol.260 (8), p.n/a

2023

Volltextzugriff (PDF)

Demonstration of a violet-distributed feedback laser with fairly small temperature dependence in current-light characteristics

Applied physics express, 2024-05, Vol.17 (5), p.52004

2024

Volltextzugriff (PDF)

Enlargement of mode size in annealed proton-exchanged periodically-poled MgO doped stoichiometric LiTaO3 waveguide for high power second harmonic generation

Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.072006

2022

Volltextzugriff (PDF)

Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by neutral-beam etching using bio-nano-templates

Journal of applied physics, 2018-05, Vol.123 (20)

2018

Volltextzugriff (PDF)

DUV coherent light emission from ultracompact microcavity wavelength conversion device

Optics express, 2022-05, Vol.30 (11), p.18628-18637

2022

Volltextzugriff (PDF)

Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows

Japanese Journal of Applied Physics, 2022-03, Vol.61 (3), p.30904

2022

Volltextzugriff (PDF)

Growth of GaN and improvement of lattice curvature using symmetric hexagonal SiO2 patterns in HVPE growth

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1049

2019

Volltextzugriff (PDF)

Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals

Japanese Journal of Applied Physics, 2022-08, Vol.61 (SK), p.SK1020

2022

Volltextzugriff (PDF)

Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

Volltextzugriff (PDF)

6th Seminar for Fundamentals of Crystal Growth

Journal of the Japanese Association for Crystal Growth, 2023, Vol.50(2), pp.50-2-06

Tanikawa, Tomoyuki

2023

Volltextzugriff (PDF)

Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8), p.85501-1-085501-4

2014

Volltextzugriff (PDF)

Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

Nanotechnology, 2016-10, Vol.27 (42), p.425401-425401

2016

Volltextzugriff (PDF)

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Applied physics letters, 2015-06, Vol.106 (22)

2015

Volltextzugriff (PDF)

Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

Volltextzugriff (PDF)

Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars

ACS photonics, 2017-07, Vol.4 (7), p.1851-1857

2017

Volltextzugriff (PDF)

Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JB16-08JB16-3

2013

Volltextzugriff (PDF)

Observation of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar Cells by Two-Photon Excitation Photoluminescence

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, p.0273-0276

2019

Volltextzugriff (PDF)

Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes

Physica status solidi. A, Applications and materials science, 2011-05, Vol.208 (5), p.1175-1178

2011

Volltextzugriff (PDF)

Strain relaxation in thick ($1{bar {1}}01$) InGaN grown on GaN/Si substrate

physica status solidi (b), 2012-03, Vol.249 (3), p.468-471

2012

Volltextzugriff (PDF)

Multiphoton-Excitation Photoluminescence as a Tool for Defect Characterization of GaN Crystal

Materia Japan, 2019/03/01, Vol.58(3), pp.144-149

Tanikawa, Tomoyuki

2019

Volltextzugriff (PDF)

Design of Horizontally Stacked AlN and Dielectric Cores Transverse Quasi‐Phase‐Matched Channel Waveguide for Squeezed Light Generation

Physica status solidi. A, Applications and materials science, 2024-07

2024

Volltextzugriff (PDF)

Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography

physica status solidi (b), 2024-06

2024

Volltextzugriff (PDF)

N-Polar growth of nitride semiconductors with MOVPE and its applications

Journal of crystal growth, 2023-03, Vol.606, p.127056, Article 127056

2023

Volltextzugriff (PDF)

1 – 25 von 140

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(116)
Mit Volltextzugriff
(132)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(9)

Menü

Weitere Dienste

Einstellungen

Control of impurity concentration in N‐polar (0001¯) GaN grown by metalorganic vapor phase epitaxy

Continuous-wave operation of InGaN tunable single-mode laser with periodically slotted structure

Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy

Demonstration of a violet-distributed feedback laser with fairly small temperature dependence in current-light characteristics

Enlargement of mode size in annealed proton-exchanged periodically-poled MgO doped stoichiometric LiTaO3 waveguide for high power second harmonic generation

Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by neutral-beam etching using bio-nano-templates

DUV coherent light emission from ultracompact microcavity wavelength conversion device

Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows

Growth of GaN and improvement of lattice curvature using symmetric hexagonal SiO2 patterns in HVPE growth

Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals

Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells

6th Seminar for Fundamentals of Crystal Growth

Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars

Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

Observation of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar Cells by Two-Photon Excitation Photoluminescence

Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes

Strain relaxation in thick ($1{bar {1}}01$) InGaN grown on GaN/Si substrate

Multiphoton-Excitation Photoluminescence as a Tool for Defect Characterization of GaN Crystal

Design of Horizontally Stacked AlN and Dielectric Cores Transverse Quasi‐Phase‐Matched Channel Waveguide for Squeezed Light Generation

Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography

N-Polar growth of nitride semiconductors with MOVPE and its applications

Suchergebnisse filtern