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Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Advanced materials (Weinheim), 2016-01, Vol.28 (3), p.547-552

2016

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3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

IEEE electron device letters, 2017-10, Vol.38 (10), p.1417-1420

2017

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High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz

Applied physics letters, 2019-11, Vol.115 (19)

2019

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Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

Advanced materials (Weinheim), 2014-09, Vol.26 (36), p.6255-6261

2014

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High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

IEEE electron device letters, 2017-05, Vol.38 (5), p.615-618

2017

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An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

IEEE transactions on microwave theory and techniques, 2014-12, Vol.62 (12), p.2878-2887

2014

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A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

IEEE transactions on microwave theory and techniques, 2017-08, Vol.65 (8), p.2836-2846

2017

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Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3

Applied physics letters, 2020-09, Vol.117 (13)

2020

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A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2017-12, Vol.65 (12), p.5113-5122

2017

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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Journal of semiconductors, 2022-09, Vol.43 (9), p.92601-66

2022

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Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Micromachines (Basel), 2020-01, Vol.11 (1), p.76

2020

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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3139-3144

2017

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High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation

Results in physics, 2023-01, Vol.44, p.106137, Article 106137

2023

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2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.51-55

2024

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Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Applied physics letters, 2015-06, Vol.106 (24)

2015

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Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range

AIP advances, 2016-09, Vol.6 (9), p.095014-095014-6

2016

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1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.160-164

2021

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Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

IEEE electron device letters, 2014-03, Vol.35 (3), p.336-338

2014

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Dynamic Spectral Modulation on Meta‐Waveguides Utilizing Liquid Crystal

Advanced science, 2023-12, Vol.10 (34), p.e2304116-n/a

2023

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Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.360-364

2018

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Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2011-04, Vol.98 (17), p.173508-173508-3

2011

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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Na mi ji shu yu jing mi gong cheng, 2020-12, Vol.3 (4), p.241-243

2020

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Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide

Frontiers in physics, 2023-01, Vol.10

2023

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Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer

IEEE electron device letters, 2015-12, Vol.36 (12), p.1284-1286

2015

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Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1241-1245

2016

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Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz

Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3

A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs

High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation

2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

Dynamic Spectral Modulation on Meta‐Waveguides Utilizing Liquid Crystal

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide

Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer

Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications

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