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Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.688-695

2014

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Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2410-2414

2013

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A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

Advanced materials (Weinheim), 2011-03, Vol.23 (10), p.1277-1281

2011

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First principles calculations of electronic and optical properties of Mo-doped rutile TiO2

Journal of alloys and compounds, 2010-09, Vol.507 (1), p.33-37

2010

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Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2010-03, Vol.49 (3), p.034001-034001-4

2010

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Resolving the Landauer paradox in ferroelectric switching by high-field charge injection

Physical review. B, Condensed matter and materials physics, 2009-07, Vol.80 (2), Article 024119

2009

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Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

Chinese physics letters, 2008-03, Vol.25, p.1087

2008

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Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Communications in theoretical physics, 2010-10, Vol.54 (10), p.763-767

胡光喜王伶俐刘冉汤庭鳌仇志军

2010

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Correlation between Imprint and Long-Time Polarization Reversal under Low Fields in Ferroelectric Thin Films

Chinese physics letters, 2009-01, Vol.26 (1), p.017701

2009

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Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Communications in theoretical physics, 2012-07, Vol.58 (1), p.171-174

2012

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Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4R), p.1437

2007

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Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application

Chinese physics letters, 2008-10, Vol.25 (10), p.3742-3745

2008

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Analytic Investigation on the Threshold Voltage of Fully-Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Journal of the Korean Physical Society, 2008, 52(6), , pp.1909-1912

2008

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A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum-Mechanical Effects

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1830-1836

2011

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Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage

Chinese physics letters, 2008-05, Vol.25 (5), p.1871-1874

2008

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First principles study on electronic structures and properties of Sn-doped rutile TiO2

Computational materials science, 2010-08, Vol.49 (2), p.430-434

2010

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Memory effect of charge injection induced by polarization reversal in Pt/SrBi 2Ta 2O 9/Pt thin-film capacitors identified from fast capacitance–voltage sweeping curves

Ceramics international, 2012, Vol.38, p.S69-S72

2012

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Multilevel Storage in Phase-Change Memory

IEICE transactions on electronics, 2007-03, Vol.E90-C (3), p.634-640

2007

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Quantum-mechanical study on the electron effective mobility of surrounding-gate nMOSFETs

2009 IEEE 8th International Conference on ASIC, 2009, p.792-795

2009

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Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory

Journal of applied physics, 2009-03, Vol.105 (6)

2009

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Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance--Voltage Loops with Sweeping Times from 500 ns to 1 s

Japanese Journal of Applied Physics, 2010-06, Vol.49 (6), p.061502-061502-6

Jiang, An-Quan

2010

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Si-Sb-Te films for phase-change random access memory

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1073-1076

2006

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Design of Multi-States Storage Medium for Phase Change Memory

Japanese Journal of Applied Physics, 2007-09, Vol.46 (9R), p.5724

2007

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AN HSPICE MACROMODEL FOR RESISTIVE RANDOM ACCESS MEMORY CELL BASED ON CuxO SYSTEM

Integrated ferroelectrics, 2008-01, Vol.96 (1), p.140-145

2008

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ANALYSES OF C-V CHARACTERISTICS OF MFIS DEVICE UNDER HIGH AND LOW FREQUENCY

Integrated ferroelectrics, 2005-01, Vol.73 (1), p.57-65

2005

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Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

First principles calculations of electronic and optical properties of Mo-doped rutile TiO2

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors

Resolving the Landauer paradox in ferroelectric switching by high-field charge injection

Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Correlation between Imprint and Long-Time Polarization Reversal under Low Fields in Ferroelectric Thin Films

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application

Analytic Investigation on the Threshold Voltage of Fully-Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum-Mechanical Effects

Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage

First principles study on electronic structures and properties of Sn-doped rutile TiO2

Memory effect of charge injection induced by polarization reversal in Pt/SrBi 2Ta 2O 9/Pt thin-film capacitors identified from fast capacitance–voltage sweeping curves

Multilevel Storage in Phase-Change Memory

Quantum-mechanical study on the electron effective mobility of surrounding-gate nMOSFETs

Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance--Voltage Loops with Sweeping Times from 500 ns to 1 s

Si-Sb-Te films for phase-change random access memory

Design of Multi-States Storage Medium for Phase Change Memory

AN HSPICE MACROMODEL FOR RESISTIVE RANDOM ACCESS MEMORY CELL BASED ON CuxO SYSTEM

ANALYSES OF C-V CHARACTERISTICS OF MFIS DEVICE UNDER HIGH AND LOW FREQUENCY

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