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A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1489-1494

2021

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Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Micromachines (Basel), 2020-02, Vol.11 (2), p.163

2020

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Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.687-690

2021

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Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

IEEE electron device letters, 2022-10, Vol.43 (10), p.1617-1620

2022

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Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate

Microelectronics and reliability, 2021-11, Vol.126, p.114302, Article 114302

2021

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High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

IEEE electron device letters, 2022-10, Vol.43 (10), p.1625-1628

2022

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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.449-453

2023

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Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations

Microelectronics and reliability, 2023-06, Vol.145, p.114983, Article 114983

2023

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Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs

Microelectronics and reliability, 2021-11, Vol.126, p.114425, Article 114425

2021

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Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation

Microelectronics and reliability, 2019-09, Vol.100-101, p.113349, Article 113349

2019

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Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

Microelectronics and reliability, 2021-07, Vol.122, p.114150, Article 114150

2021

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Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.139-142

2023

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Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2020, p.1-4

2020

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Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs

IEEE electron device letters, 2022-10, Vol.43 (10), p.1617-1620

2022

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Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2020, p.1-5

2020

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Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Microelectronics and reliability, 2022-07, Vol.134, p.114568, Article 114568

2022

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Framework of SAGI Agriculture Remote Sensing and Its Perspectives in Supporting National Food Security

Journal of Integrative Agriculture, 2014-07, Vol.13 (7), p.1443-1450

SHI Yun, JI Shun-ping, SHAO Xiao-wei, TANG Hua-jun, WU Wen-bin, YANG Peng, ZHANG , Yong-jun , Shibasaki Ryosuke (Key Laboratory of Agri-Informatics, Ministry of Agriculture/ Institute of Agricultural Resources and Regional Planning, Chinese Academy of Agricultural Sciences Beijing 100081, P.R.China E-mail: tanghuajun@caas.cn)

2014

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Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2022, p.1-5

2022

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Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2021, p.1-6

2021

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Mental health status and change in living rhythms among college students in China during the COVID-19 pandemic: A large-scale survey

Journal of psychosomatic research, 2020-10, Vol.137, p.110219-110219, Article 110219

2020

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The Psychological Impact of the COVID-19 Epidemic on Guangdong College Students: The Difference Between Seeking and Not Seeking Psychological Help

Frontiers in psychology, 2020-09, Vol.11, p.2231-2231

2020

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Versatile Exciplex-Forming Co-Host for Improving Efficiency and Lifetime of Fluorescent and Phosphorescent Organic Light-Emitting Diodes

ACS applied materials & interfaces, 2018-07, Vol.10 (28), p.24090-24098

2018

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GSK3α phosphorylates dynamin-2 to promote GLUT4 endocytosis in muscle cells

The Journal of cell biology, 2023-02, Vol.222 (2), p.1

2023

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Extending Anisotropy Dynamics of Light‐Emitting Dipoles as Necessary Condition Toward Developing Highly‐Efficient OLEDs

Advanced optical materials, 2023-04, Vol.11 (8), p.n/a

2023

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A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias

Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations

Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs

Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric

Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs

Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Framework of SAGI Agriculture Remote Sensing and Its Perspectives in Supporting National Food Security

Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Mental health status and change in living rhythms among college students in China during the COVID-19 pandemic: A large-scale survey

The Psychological Impact of the COVID-19 Epidemic on Guangdong College Students: The Difference Between Seeking and Not Seeking Psychological Help

Versatile Exciplex-Forming Co-Host for Improving Efficiency and Lifetime of Fluorescent and Phosphorescent Organic Light-Emitting Diodes

GSK3α phosphorylates dynamin-2 to promote GLUT4 endocytosis in muscle cells

Extending Anisotropy Dynamics of Light‐Emitting Dipoles as Necessary Condition Toward Developing Highly‐Efficient OLEDs

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