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Room-temperature continuous-wave quantum cascade lasers grown by MOCVD without lateral regrowth

IEEE photonics technology letters, 2006-06, Vol.18 (12), p.1347-1349

2006

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IEEE_Xplore

High-power, high-brightness shortwave infrared lasers

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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High temperature characteristics of InGaAsP/InP laser structures

Applied physics letters, 1993-05, Vol.62 (19), p.2402-2404

1993

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Strained InGaAs/InP quantum well lasers

Applied physics letters, 1990-03, Vol.56 (13), p.1210-1212

1990

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Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers

Applied physics letters, 1991-03, Vol.58 (12), p.1253-1255

1991

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Transform-limited 1.4 ps optical pulses from a monolithic colliding-pulse mode-locked quantum well laser

Applied physics letters, 1990-08, Vol.57 (8), p.759-761

1990

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Room-temperature continuous-wave operation of long wavelength (λ =9.5 μm) MOVPE-grown quantum cascade lasers

Electronics letters, 2007, Vol.43 (19), p.1026-1028

2007

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High Performance Quantum Cascade Lasers Grown by MOCVD with/without Lateral Regrowth

Physics of Semiconductors; Part A, 2007, Vol.893, p.519-520

2007

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Tunable dual-mode operation in a chirped grating distributed-feedback laser

IEEE photonics technology letters, 2000-08, Vol.12 (8), p.963-965

2000

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IEEE_Xplore

Amplified spontaneous emission spectroscopy in strained quantum-well lasers

IEEE journal of selected topics in quantum electronics, 1995-12, Vol.1 (4), p.1100-1107

1995

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IEEE_Xplore

High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers

IEEE photonics technology letters, 1991-02, Vol.3 (2), p.100-102

1991

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IEEE_Xplore

Optical gain measurements based on fundamental properties and comparison with many-body theory

Journal of applied physics, 1999-09, Vol.86 (6), p.2945-2952

1999

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SBS Suppression Using a Multichannel Tunable Laser with Data-Encoding Capability

Fiber and integrated optics, 1998-10, Vol.17 (4), p.311-316

1998

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1.6 W high wall plug efficiency, continuous-wave room temperature quantum cascade laser emitting at 4.6 μ m

Applied physics letters, 2008-03, Vol.92 (11), p.111110-111110-3

2008

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Optical transitions in quantum wires with strain-induced lateral confinement

Physical review letters, 1990-09, Vol.65 (13), p.1631-1634

1990

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CW injection locking of a mode-locked semiconductor laser as a local oscillator comb for channelizing broad-band RF signals

IEEE transactions on microwave theory and techniques, 1999-07, Vol.47 (7), p.1225-1233

1999

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IEEE_Xplore

On the temperature sensitivity of semiconductor lasers

Applied physics letters, 1992-01, Vol.60 (2), p.157-159

1992

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Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

Applied physics letters, 1989-11, Vol.55 (22), p.2283-2285

1989

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A wavelength-tunable curved waveguide DFB laser with an integrated modulator

IEEE journal of quantum electronics, 1999-06, Vol.35 (6), p.961-969

1999

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IEEE_Xplore

Frequency response subtraction for simple measurement of intrinsic laser dynamic properties

IEEE photonics technology letters, 1992-02, Vol.4 (2), p.133-136

1992

Link zum Volltext
IEEE_Xplore

High output power single longitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MQW DFB) lasers

IEEE photonics technology letters, 1990-07, Vol.2 (7), p.453-455

1990

Link zum Volltext
IEEE_Xplore

Recombination process and its effect on the dc performance of InP/InGaAs single-heterojunction bipolar transistors

Journal of applied physics, 1993-05, Vol.73 (9), p.4444-4447

1993

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H2S and CO2 gas sensing using DFB laser diodes emitting at 1.57 μm

Sensors and actuators. B, Chemical, 1995-10, Vol.29 (1-3), p.101-107

1995

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Buried-heterostructure lasers fabricated by in situ processing techniques

Applied physics letters, 1990-10, Vol.57 (18), p.1864-1866

1990

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Optical gain and refractive index of a laser amplifier in the presence of pump light for cross-gain and cross-phase modulation

IEEE photonics technology letters, 1997-10, Vol.9 (10), p.1358-1360

1997

Link zum Volltext
IEEE_Xplore

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Room-temperature continuous-wave quantum cascade lasers grown by MOCVD without lateral regrowth

High-power, high-brightness shortwave infrared lasers

High temperature characteristics of InGaAsP/InP laser structures

Strained InGaAs/InP quantum well lasers

Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers

Transform-limited 1.4 ps optical pulses from a monolithic colliding-pulse mode-locked quantum well laser

Room-temperature continuous-wave operation of long wavelength (λ =9.5 μm) MOVPE-grown quantum cascade lasers

High Performance Quantum Cascade Lasers Grown by MOCVD with/without Lateral Regrowth

Tunable dual-mode operation in a chirped grating distributed-feedback laser

Amplified spontaneous emission spectroscopy in strained quantum-well lasers

High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers

Optical gain measurements based on fundamental properties and comparison with many-body theory

SBS Suppression Using a Multichannel Tunable Laser with Data-Encoding Capability

1.6 W high wall plug efficiency, continuous-wave room temperature quantum cascade laser emitting at 4.6 μ m

Optical transitions in quantum wires with strain-induced lateral confinement

CW injection locking of a mode-locked semiconductor laser as a local oscillator comb for channelizing broad-band RF signals

On the temperature sensitivity of semiconductor lasers

Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

A wavelength-tunable curved waveguide DFB laser with an integrated modulator

Frequency response subtraction for simple measurement of intrinsic laser dynamic properties

High output power single longitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MQW DFB) lasers

Recombination process and its effect on the dc performance of InP/InGaAs single-heterojunction bipolar transistors

H2S and CO2 gas sensing using DFB laser diodes emitting at 1.57 μm

Buried-heterostructure lasers fabricated by in situ processing techniques

Optical gain and refractive index of a laser amplifier in the presence of pump light for cross-gain and cross-phase modulation

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