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Relationship between the degree of subchondral collapse and articular surface irregularities in osteonecrosis of the femoral head

Journal of orthopaedic research, 2023-09, Vol.41 (9), p.1996-2006

2023

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Posterior Pelvic Tilt in the Standing Position Might Be Associated with Collapse Progression in Post‐Collapse Stage Osteonecrosis of the Femoral Head

Orthopaedic surgery, 2022-12, Vol.14 (12), p.3201-3208

2022

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Mobile robot navigation using vision and olfaction to search for a gas/odor source

Autonomous robots, 2006-06, Vol.20 (3), p.231-238

2006

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Family History of Developmental Dysplasia of the Hip is a Risk Factor for the Progression of Hip Osteoarthritis

The Journal of arthroplasty, 2024-02, Vol.39 (2), p.393-397.e1

2024

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Effects of bone mineral density at the lateral sclerotic boundary on the femoral head collapse onset in osteonecrosis of the femoral head: A preliminary study

Clinical biomechanics (Bristol), 2024-01, Vol.111, p.106156-106156, Article 106156

2024

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Joint-preserving effect and patient-reported outcomes of transtrochanteric curved varus osteotomy for osteonecrosis of the femoral head

Journal of orthopaedic science : official journal of the Japanese Orthopaedic Association, 2024-04

2024

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Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate

Applied physics letters, 1997-05, Vol.70 (20), p.2720-2722

1997

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Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy

Applied physics letters, 1997-08, Vol.71 (6), p.812-814

1997

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Optically pumped stimulated emission from cubic GaN/AlGaN double heterostructure grown on GaAs(1 0 0) using metalorganic vapor-phase epitaxy

Journal of crystal growth, 1998-06, Vol.189-190, p.411-414

1998

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Newly Packaged 50-µm-Spaced 8-Element Laser Diode Array with a Thermoelectric Cooler

Japanese Journal of Applied Physics, 1993-11, Vol.32 (11S), p.5284

1993

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Reactive-fast-atom beam etching of GaAs using Cl2 gas

Journal of applied physics, 1989-09, Vol.66 (6), p.2613-2618

1989

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Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum-well laser diodes

Applied physics letters, 1994-01, Vol.64 (2), p.158-160

1994

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InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Journal of applied physics, 1987-03, Vol.61 (5), p.1713-1719

1987

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Refractive indices of In0.49Ga0.51-xAlxP lattice matched to GaAs

Journal of applied physics, 1986-02, Vol.59 (3), p.985-986

1986

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52.3: Direct-viewing Display Using Alignment-controlled PDLC and Holographic PDLC

SID International Symposium Digest of technical papers, 2000-05, Vol.31 (1), p.1184-1187

2000

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Raman scattering in InGaAlP layers grown by molecular-beam epitaxy

Journal of applied physics, 1989-06, Vol.65 (12), p.5007-5011

1989

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Growth of zinc-blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a low V/III molar ratio

Journal of electronic materials, 1997-03, Vol.26 (3), p.320

1997

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AFM measurement of initially grown GaN layer on GaAs substrate

Journal of crystal growth, 2000-12, Vol.221 (1), p.271-275

2000

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Development of a thermally controlled magnetization actuator (TCMA) for a micromachined motor

Electronics & communications in Japan. Part 2, Electronics, 1995-12, Vol.78 (12), p.96-103

1995

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Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

Journal of electronic materials, 1997-03, Vol.26 (3), p.320-324

1997

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Metalorganic Vapor-Phase Epitaxial Growth and Characterization of Cubic Al x Ga 1-x N Alloy

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1449

1998

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Etching of cubic GaN by annealing in hydrogen ambient

Journal of crystal growth, 1998-06, Vol.189-190, p.730-733

1998

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Integrated coupling device between a laser diode and an optical fiber using a microlens

Electronics & communications in Japan. Part 2, Electronics, 1994-08, Vol.77 (8), p.45-53

1994

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CW CO2 Laser for Material Processing

The Review of Laser Engineering, 1993/04/29, Vol.21(4), pp.439-446

1993

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Characterization of AlGaAs microstructure fabricated by AlGaAs/GaAs micromachining

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1778-1783

1994

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Relationship between the degree of subchondral collapse and articular surface irregularities in osteonecrosis of the femoral head

Posterior Pelvic Tilt in the Standing Position Might Be Associated with Collapse Progression in Post‐Collapse Stage Osteonecrosis of the Femoral Head

Mobile robot navigation using vision and olfaction to search for a gas/odor source

Family History of Developmental Dysplasia of the Hip is a Risk Factor for the Progression of Hip Osteoarthritis

Effects of bone mineral density at the lateral sclerotic boundary on the femoral head collapse onset in osteonecrosis of the femoral head: A preliminary study

Joint-preserving effect and patient-reported outcomes of transtrochanteric curved varus osteotomy for osteonecrosis of the femoral head

Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate

Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy

Optically pumped stimulated emission from cubic GaN/AlGaN double heterostructure grown on GaAs(1 0 0) using metalorganic vapor-phase epitaxy

Newly Packaged 50-µm-Spaced 8-Element Laser Diode Array with a Thermoelectric Cooler

Reactive-fast-atom beam etching of GaAs using Cl2 gas

Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum-well laser diodes

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Refractive indices of In0.49Ga0.51-xAlxP lattice matched to GaAs

52.3: Direct-viewing Display Using Alignment-controlled PDLC and Holographic PDLC

Raman scattering in InGaAlP layers grown by molecular-beam epitaxy

Growth of zinc-blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a low V/III molar ratio

AFM measurement of initially grown GaN layer on GaAs substrate

Development of a thermally controlled magnetization actuator (TCMA) for a micromachined motor

Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

Metalorganic Vapor-Phase Epitaxial Growth and Characterization of Cubic Al x Ga 1-x N Alloy

Etching of cubic GaN by annealing in hydrogen ambient

Integrated coupling device between a laser diode and an optical fiber using a microlens

CW CO2 Laser for Material Processing

Characterization of AlGaAs microstructure fabricated by AlGaAs/GaAs micromachining

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