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Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Applied physics letters, 2011-08, Vol.99 (9)

2011

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Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

Semiconductor science and technology, 2007-05, Vol.22 (5), p.522-527

2007

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Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics

Applied physics letters, 2011-05, Vol.98 (18), p.183502-183502-3

2011

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Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Silane-Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs

IEEE electron device letters, 2009-02, Vol.30 (2), p.110-112

2009

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Scientific reports, 2015-09, Vol.5 (1), p.14092-14092, Article 14092

2015

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Hybrid Plasmonic Structures: Design and Fabrication by Laser Means

IEEE journal of selected topics in quantum electronics, 2013-05, Vol.19 (3), p.4600309-4600309

2013

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In situ Surface Passivation of Gallium Nitride for Metal-Organic Chemical Vapor Deposition of High-Permittivity Gate Dielectric

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.95-102

2011

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High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition

IEEE electron device letters, 2010-01, Vol.31 (1), p.8-10

2010

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Light Irradiation through Small Particles and Its Applications for Surface Nanostructuring in Near Field

Chinese physics letters, 2007-10, Vol.24 (10), p.2947-2950

2007

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Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

Thin solid films, 2007-03, Vol.515 (10), p.4369-4372

2007

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Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-gan

Thin solid films, 2007-03, Vol.515 (10), p.4471-4475

2007

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Dopant Loss Mechanism in n[sup +]∕p Germanium Junctions during Rapid Thermal Annealing

Journal of the Electrochemical Society, 2005, Vol.152 (12), p.G895

2005

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Tuning of localized surface plasmon resonance of well-ordered Ag/Au bimetallic nanodot arrays by laser interference lithography and thermal annealing

Applied Optics, 2011-11, Vol.50 (31), p.G74

2011

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Boron Profile Narrowing in Laser-Processed Silicon after Rapid Thermal Anneal

Journal of the Electrochemical Society, 2004, Vol.151 (1), p.G80

2004

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Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1888-1891

1997

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Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation

Journal of alloys and compounds, 2015-07, Vol.636, p.191-195

2015

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Band alignment of HfAIO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH sub(4) passivation

Journal of alloys and compounds, 2015-07, Vol.636, p.191-195

2015

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Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕GaN heterostructure

Applied physics letters, 2006-05, Vol.88 (22)

2006

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Surface Nano-fabrication by Laser Precision Engineering

The Review of Laser Engineering, 2008, Vol.36(APLS), pp.1184-1187

2008

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Impact of In situ vacuum anneal and SiH 4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Applied physics letters, 2011-09, Vol.99 (9), p.093504-093504-3

2011

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AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF06-04CF06-5

2013

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Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers

Japanese Journal of Applied Physics, 1994-06, Vol.33 (6B), p.L826-L829

1994

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Laser Nano-Patterning for Large Area Nanostructure Fabrication

International journal of optomechatronics, 2008-11, Vol.2 (4), p.382-389

2008

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High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In 0.14 Ga 0.86 N contact using a CMOS compatible gold-free process

Applied physics express, 2014-12, Vol.7 (12), p.126501

2014

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Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics

Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors

Silane-Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Hybrid Plasmonic Structures: Design and Fabrication by Laser Means

In situ Surface Passivation of Gallium Nitride for Metal-Organic Chemical Vapor Deposition of High-Permittivity Gate Dielectric

High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition

Light Irradiation through Small Particles and Its Applications for Surface Nanostructuring in Near Field

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-gan

Dopant Loss Mechanism in n[sup +]∕p Germanium Junctions during Rapid Thermal Annealing

Tuning of localized surface plasmon resonance of well-ordered Ag/Au bimetallic nanodot arrays by laser interference lithography and thermal annealing

Boron Profile Narrowing in Laser-Processed Silicon after Rapid Thermal Anneal

Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates

Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation

Band alignment of HfAIO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH sub(4) passivation

Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕GaN heterostructure

Surface Nano-fabrication by Laser Precision Engineering

Impact of In situ vacuum anneal and SiH 4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers

Laser Nano-Patterning for Large Area Nanostructure Fabrication

High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In 0.14 Ga 0.86 N contact using a CMOS compatible gold-free process

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