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Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2475-2483

2008

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The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2770-2777

2009

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Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3048-3055

2008

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Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1277-1283

2009

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Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

IEEE electron device letters, 2008-01, Vol.29 (1), p.89-92

2008

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Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

IEEE electron device letters, 2007-10, Vol.28 (10), p.905-908

2007

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N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

IEEE electron device letters, 2007-02, Vol.28 (2), p.164-167

2007

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Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

IEEE electron device letters, 2009-05, Vol.30 (5), p.472-474

2009

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Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

IEEE electron device letters, 2008-01, Vol.29 (1), p.80-82

2008

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NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

IEEE electron device letters, 2009-08, Vol.30 (8), p.867-869

2009

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Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.808-810

2008

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N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

IEEE electron device letters, 2007-11, Vol.28 (11), p.1014-1017

2007

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Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

IEEE electron device letters, 2008-04, Vol.29 (4), p.382-385

2008

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A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

IEEE electron device letters, 2008-02, Vol.29 (2), p.192-194

2008

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Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.750-752

2008

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Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon-Germanium Source and Drain

IEEE electron device letters, 2009-03, Vol.30 (3), p.250-253

2009

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Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

IEEE electron device letters, 2006-09, Vol.27 (9), p.769-771

2006

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Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2589

2008

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Negative bias temperature instability of p-channel transistors with diamond-like carbon liner having ultra-high compressive stress

2009 IEEE International Reliability Physics Symposium, 2009, p.977-980

2009

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Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

2007 IEEE Symposium on VLSI Technology, 2007, p.108-109

2007

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P-Channel Tri-Gate FinFETs Featuring Ni1-yPtySiGe Source/Drain Contacts for Enhanced Drive Current Performance

IEEE electron device letters, 2008-05, Vol.29 (5), p.438-441

2008

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Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007, p.151-154

2007

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Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

Applied physics letters, 2005-12, Vol.87 (26), p.262104-262104-3

2005

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Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

IEEE electron device letters, 2008-05, Vol.29 (5), p.464-467

2008

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Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

Journal of applied physics, 2007-11, Vol.102 (9), p.093717-093717-4

2007

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Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon-Germanium Source and Drain

Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor

Negative bias temperature instability of p-channel transistors with diamond-like carbon liner having ultra-high compressive stress

Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

P-Channel Tri-Gate FinFETs Featuring Ni1-yPtySiGe Source/Drain Contacts for Enhanced Drive Current Performance

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

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