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Impact of compositional disorder on electron migration in lutetium–yttrium oxyorthosilicate scintillator

Journal of applied physics, 2022-08, Vol.132 (5)

2022

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Study of electronic excitation relaxation at cerium ions in Gd3Al2Ga3O12 matrix using multipulse transient absorption technique

Journal of applied physics, 2020-09, Vol.128 (10)

2020

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Comparison of electrical characteristics of thin tellurium layers obtained from chemical solution and by thermal evaporation in vacuum

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Kinetic Monte Carlo simulations of the dynamics of a coupled system of free and localized carriers in AlGaN

Journal of physics. Condensed matter, 2020-04, Vol.32 (14), p.145901-145901

2020

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Influence of matrix composition and its fluctuations on excitation relaxation and emission spectrum of Ce ions in (Gdx Y1-x)3Al2Ga3O12:Ce scintillators

Journal of luminescence, 2022-02, Vol.242, p.118590, Article 118590

2022

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Improvement of the Time Resolution of Radiation Detectors Based on Gd3Al2Ga3O12 Scintillators With SiPM Readout

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1879-1888

2019

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Multipurpose Ce-doped Ba-Gd silica glass scintillator for radiation measurements

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2021-11, Vol.1015, p.165762, Article 165762

2021

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GAGG:Ce scintillation fibers for high energy physics applications

Journal of instrumentation, 2019-06, Vol.14 (6), p.P06031-P06031

2019

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Internal quantum efficiency in AlGaN with strong carrier localization

Applied physics letters, 2012-11, Vol.101 (21)

2012

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Improvement of the timing properties of Ce-doped oxyorthosilicate LYSO scintillating crystals

The Journal of physics and chemistry of solids, 2020-04, Vol.139, p.109356, Article 109356

2020

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Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Journal of physics. D, Applied physics, 2016-04, Vol.49 (14), p.145110-145115

2016

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Subpicosecond luminescence rise time in magnesium codoped GAGG:Ce scintillator

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2017-10, Vol.870, p.25-29

2017

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Journal of physics. D, Applied physics, 2019-08, Vol.52 (32), p.325105

2019

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Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs

Journal of luminescence, 2023-05, Vol.257, p.119732, Article 119732

2023

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Time and energy resolution with SPACAL type modules made of high-light-yield Ce-doped inorganic scintillation materials: Spillover and background noise effects

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2021-05, Vol.999, p.165169, Article 165169

2021

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Correlation between carrier localization and efficiency droop in AlGaN epilayers

Applied physics letters, 2013-07, Vol.103 (1)

2013

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Transient optical absorption technique to test timing properties of LYSO:Ce scintillators for the CMS Barrel Timing Layer

Radiation physics and chemistry (Oxford, England : 1993), 2023-05, Vol.206, p.110792, Article 110792

2023

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Measurement of non-equilibrium carriers dynamics in Ce-doped YAG, LuAG and GAGG crystals with and without Mg-codoping

Journal of luminescence, 2018-02, Vol.194, p.1-7

2018

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Irradiation effects on Gd3Al2Ga3O12 scintillators prospective for application in harsh irradiation environments

Radiation physics and chemistry (Oxford, England : 1993), 2019-11, Vol.164, p.108365, Article 108365

2019

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Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals

Journal of luminescence, 2016-10, Vol.178, p.54-60

2016

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Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

Journal of physics. D, Applied physics, 2015-06, Vol.48 (27), p.275105-5

2015

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Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content

Journal of applied physics, 2014-06, Vol.115 (21)

2014

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Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1138-1141

2015

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Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

Journal of crystal growth, 2017-02, Vol.459, p.173-177

2017

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Optical and structural properties of BGaN layers grown on different substrates

Journal of physics. D, Applied physics, 2015-11, Vol.48 (46), p.465307-465312

2015

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Impact of compositional disorder on electron migration in lutetium–yttrium oxyorthosilicate scintillator

Study of electronic excitation relaxation at cerium ions in Gd3Al2Ga3O12 matrix using multipulse transient absorption technique

Comparison of electrical characteristics of thin tellurium layers obtained from chemical solution and by thermal evaporation in vacuum

Kinetic Monte Carlo simulations of the dynamics of a coupled system of free and localized carriers in AlGaN

Influence of matrix composition and its fluctuations on excitation relaxation and emission spectrum of Ce ions in (Gdx Y1-x)3Al2Ga3O12:Ce scintillators

Improvement of the Time Resolution of Radiation Detectors Based on Gd3Al2Ga3O12 Scintillators With SiPM Readout

Multipurpose Ce-doped Ba-Gd silica glass scintillator for radiation measurements

GAGG:Ce scintillation fibers for high energy physics applications

Internal quantum efficiency in AlGaN with strong carrier localization

Improvement of the timing properties of Ce-doped oxyorthosilicate LYSO scintillating crystals

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Subpicosecond luminescence rise time in magnesium codoped GAGG:Ce scintillator

Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs

Time and energy resolution with SPACAL type modules made of high-light-yield Ce-doped inorganic scintillation materials: Spillover and background noise effects

Correlation between carrier localization and efficiency droop in AlGaN epilayers

Transient optical absorption technique to test timing properties of LYSO:Ce scintillators for the CMS Barrel Timing Layer

Measurement of non-equilibrium carriers dynamics in Ce-doped YAG, LuAG and GAGG crystals with and without Mg-codoping

Irradiation effects on Gd3Al2Ga3O12 scintillators prospective for application in harsh irradiation environments

Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals

Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content

Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

Optical and structural properties of BGaN layers grown on different substrates

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