UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 139

Sortiert nach

High Curie temperature ferromagnetic structures of (Sb 2 Te 3 ) 1-x (MnSb 2 Te 4 ) x with x = 0.7-0.8

Scientific reports, 2023-05, Vol.13 (1), p.7381-7381, Article 7381

2023

Volltextzugriff (PDF)

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates

Crystals (Basel), 2023-04, Vol.13 (4), p.677

2023

Volltextzugriff (PDF)

High performance, room temperature, broadband II-VI quantum cascade detector

Applied physics letters, 2015-10, Vol.107 (14)

2015

Volltextzugriff (PDF)

Robust Topological Interfaces and Charge Transfer in Epitaxial Bi2Se3/II–VI Semiconductor Superlattices

Nano letters, 2015-10, Vol.15 (10), p.6365-6370

2015

Volltextzugriff (PDF)

High detectivity short-wavelength II-VI quantum cascade detector

Applied physics letters, 2014-08, Vol.105 (6)

2014

Volltextzugriff (PDF)

Two-band ZnCdSe/ZnCdMgSe quantum well infrared photodetector

AIP advances, 2018-07, Vol.8 (7), p.075105-075105-8

2018

Volltextzugriff (PDF)

Surface Enhanced Raman Spectroscopy of Pyridine on CdSe/ZnBeSe Quantum Dots Grown by Molecular Beam Epitaxy

Journal of physical chemistry. C, 2010-10, Vol.114 (41), p.17460-17464

2010

Volltextzugriff (PDF)

Reduced twinning and surface roughness of Bi2Se3 and Bi2Te3 layers grown by molecular beam epitaxy on sapphire substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-03, Vol.36 (2)

2018

Volltextzugriff (PDF)

Inverse design of omnidirectional coherent absorbers for optical power beaming applications

Optics express, 2023-08, Vol.31 (17), p.28285-28294

2023

Volltextzugriff (PDF)

Self-assembled Bismuth Selenide (Bi 2 Se 3 ) quantum dots grown by molecular beam epitaxy

Scientific reports, 2019-03, Vol.9 (1), p.3370-3370, Article 3370

2019

Volltextzugriff (PDF)

Designer Topological Insulator with Enhanced Gap and Suppressed Bulk Conduction in Bi 2 Se 3 /Sb 2 Te 3 Ultrashort-Period Superlattices

Nano letters, 2020-05, Vol.20 (5), p.3420-3426

2020

Volltextzugriff (PDF)

MgSe/CdSe coupled quantum wells with optimized MgSe coupling layer thickness and near infrared intersubband absorption around 1.55 μm

Journal of physics. D, Applied physics, 2016-03, Vol.49 (11), p.115111-115115

2016

Volltextzugriff (PDF)

Compositional Control and Optimization of Molecular Beam Epitaxial Growth of (Sb2Te3)1–x (MnSb2Te4) x Magnetic Topological Insulators

Crystal growth & design, 2022-05, Vol.22 (5), p.3007-3015

2022

Volltextzugriff (PDF)

Designer Topological Insulator with Enhanced Gap and Suppressed Bulk Conduction in Bi2Se3/Sb2Te3 Ultrashort-Period Superlattices

Nano letters, 2020-05, Vol.20 (5), p.3420-3426

2020

Volltextzugriff (PDF)

Growth Habits of Bismuth Selenide (Bi2Se3) Layers and Nanowires over Stranski–Krastanov Indium Arsenide Quantum Dots

Crystal growth & design, 2019-12, Vol.19 (12), p.6989-6993

2019

Volltextzugriff (PDF)

Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices

Journal of crystal growth, 2017-12, Vol.480, p.74-77

2017

Volltextzugriff (PDF)

Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region

Journal of applied physics, 2015-10, Vol.118 (16)

2015

Volltextzugriff (PDF)

Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates

Journal of crystal growth, 2015-09, Vol.425, p.221-224

2015

Volltextzugriff (PDF)

Bi 2 Se 3 van der Waals Virtual Substrates for II-VI Heterostructures

Physica status solidi. B, Basic solid state physics : PSS, 2017-11, Vol.254 (11)

2017

Volltextzugriff (PDF)

MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μ m

Applied physics letters, 2014-12, Vol.105 (23)

2014

Volltextzugriff (PDF)

Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices

Journal of crystal growth, 2015-09, Vol.425, p.207-211

2015

Volltextzugriff (PDF)

Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1−x topological materials with exceedingly high Curie temperature

APL materials, 2024-07, Vol.12 (7), p.071109-071109-10

2024

Volltextzugriff (PDF)

Bi2Se3 van der Waals Virtual Substrates for II–VI Heterostructures

Physica status solidi. B, Basic solid state physics : PSS, 2017-11, Vol.254 (11), p.n/a

2017

Volltextzugriff (PDF)

ZnCdSe/ZnCdMgSe quantum well infrared photodetector

Optics express, 2012-09, Vol.20 (20), p.22391-22397

2012

Volltextzugriff (PDF)

II-VI quantum cascade emitters in the 6-8 μm range

Physica Status Solidi. B: Basic Solid State Physics, 2016-08, Vol.253 (8), p.1494-1497

2016

Volltextzugriff (PDF)

1 – 25 von 139

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(118)
Mit Volltextzugriff
(132)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(97)
Physical Sciences
(81)
Physics
(80)
Physics, Applied
(67)
Technology
(50)
Materials Science
(37)
Materials Science, Multidisciplinary
(30)
Molecular Beam Epitaxy
(25)
Engineering
(23)
Engineering, Electrical & Electronic
(23)
Science & Technology - Other Topics
(20)
Nanoscience & Nanotechnology
(18)
Physics, Condensed Matter
(17)
Exact Sciences And Technology
(16)
Humans
(14)
Photoluminescence
(14)
Life Sciences & Biomedicine
(13)
Substrates
(13)
Quantum Wells
(11)
Crystallography
(10)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

High Curie temperature ferromagnetic structures of (Sb 2 Te 3 ) 1-x (MnSb 2 Te 4 ) x with x = 0.7-0.8

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates

High performance, room temperature, broadband II-VI quantum cascade detector

Robust Topological Interfaces and Charge Transfer in Epitaxial Bi2Se3/II–VI Semiconductor Superlattices

High detectivity short-wavelength II-VI quantum cascade detector

Two-band ZnCdSe/ZnCdMgSe quantum well infrared photodetector

Surface Enhanced Raman Spectroscopy of Pyridine on CdSe/ZnBeSe Quantum Dots Grown by Molecular Beam Epitaxy

Reduced twinning and surface roughness of Bi2Se3 and Bi2Te3 layers grown by molecular beam epitaxy on sapphire substrates

Inverse design of omnidirectional coherent absorbers for optical power beaming applications

Self-assembled Bismuth Selenide (Bi 2 Se 3 ) quantum dots grown by molecular beam epitaxy

Designer Topological Insulator with Enhanced Gap and Suppressed Bulk Conduction in Bi 2 Se 3 /Sb 2 Te 3 Ultrashort-Period Superlattices

MgSe/CdSe coupled quantum wells with optimized MgSe coupling layer thickness and near infrared intersubband absorption around 1.55 μm

Compositional Control and Optimization of Molecular Beam Epitaxial Growth of (Sb2Te3)1–x (MnSb2Te4) x Magnetic Topological Insulators

Designer Topological Insulator with Enhanced Gap and Suppressed Bulk Conduction in Bi2Se3/Sb2Te3 Ultrashort-Period Superlattices

Growth Habits of Bismuth Selenide (Bi2Se3) Layers and Nanowires over Stranski–Krastanov Indium Arsenide Quantum Dots

Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices

Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region

Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates

Bi 2 Se 3 van der Waals Virtual Substrates for II-VI Heterostructures

MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μ m

Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices

Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1−x topological materials with exceedingly high Curie temperature

Bi2Se3 van der Waals Virtual Substrates for II–VI Heterostructures

ZnCdSe/ZnCdMgSe quantum well infrared photodetector

II-VI quantum cascade emitters in the 6-8 μm range

Suchergebnisse filtern