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Optical phonons of GeSbTe alloys: Influence of structural disorder

Journal of alloys and compounds, 2023-05, Vol.942, p.169122, Article 169122

2023

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Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal

JETP letters, 2021-05, Vol.113 (10), p.651-656

2021

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Circularly polarized Raman scattering in silicon

Journal of Raman spectroscopy, 2020-01, Vol.51 (1), p.201-206

Talochkin, A. B.

2020

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Strain in Ultrathin SiGeSn Layers in a Silicon Matrix

JETP letters, 2017-12, Vol.106 (12), p.780-784

2017

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Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

Journal of crystal growth, 2017-11, Vol.478, p.205-211

2017

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Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Resonant Reflectance in Silicon Nanorods Arrays

Solid state phenomena, 2015-10, Vol.245, p.8-13

2015

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Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Journal of applied physics, 2014-04, Vol.115 (14)

2014

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Fabrication and optical properties of silicon nanopillars

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12074-5

2014

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Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Journal of experimental and theoretical physics, 2011-09, Vol.113 (3), p.510-515

2011

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Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.907-911

2011

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots

Semiconductors (Woodbury, N.Y.), 2009-08, Vol.43 (8), p.997-1001

2009

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Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(1 1 1) system

Journal of crystal growth, 2009-07, Vol.311 (15), p.3898-3903

2009

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An electron–hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements

Nanotechnology, 2009-04, Vol.20 (17), p.175401-175401

2009

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Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system

Journal of crystal growth, 2009, Vol.311 (15), p.3898-3903

2009

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Raman resonance in the strained Gequantum dot array

Nanotechnology, 2008-07, Vol.19 (27), p.275402 (6)-275402 (6)

2008

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Raman resonance in the strained Ge quantum dot array

Nanotechnology, 2008-07, Vol.19 (27), p.275402-275402

2008

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Relaxation of mechanical stresses in an array of Ge quantum dots obtained in Si

JETP letters, 2007-11, Vol.86 (5), p.344-347

2007

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Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

Journal of applied physics, 2007-10, Vol.102 (7), p.074312-074312-10

2007

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Inelastic strain relaxation in the Ge quantum dot array

Applied physics letters, 2007-08, Vol.91 (9), p.093127-093127-3

2007

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Raman E{sub 1} and E{sub 1} + {delta}{sub 1} resonances in a system of unstrained germanium quantum dots

Journal of experimental and theoretical physics, 2006-05, Vol.102 (5)

2006

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Raman E 1 and E 1 + Δ1 resonances in a system of unstrained germanium quantum dots

Journal of experimental and theoretical physics, 2006-05, Vol.102 (5), p.828-835

2006

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Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4), p.420-426

2006

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Optical phonons of GeSbTe alloys: Influence of structural disorder

Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal

Circularly polarized Raman scattering in silicon

Strain in Ultrathin SiGeSn Layers in a Silicon Matrix

Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

Resonant Reflectance in Silicon Nanorods Arrays

Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Fabrication and optical properties of silicon nanopillars

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots

Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(1 1 1) system

An electron–hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements

Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system

Raman resonance in the strained Gequantum dot array

Raman resonance in the strained Ge quantum dot array

Relaxation of mechanical stresses in an array of Ge quantum dots obtained in Si

Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

Inelastic strain relaxation in the Ge quantum dot array

Raman E{sub 1} and E{sub 1} + {delta}{sub 1} resonances in a system of unstrained germanium quantum dots

Raman E 1 and E 1 + Δ1 resonances in a system of unstrained germanium quantum dots

Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions

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