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Circularly polarized Raman scattering in silicon

Journal of Raman spectroscopy, 2020-01, Vol.51 (1), p.201-206

Talochkin, A. B.

2020

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Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal

JETP letters, 2021-05, Vol.113 (10), p.651-656

2021

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Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Strain in Ultrathin SiGeSn Layers in a Silicon Matrix

JETP letters, 2017-12, Vol.106 (12), p.780-784

2017

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Resonance Raman scattering by optical phonons in unstrained germanium quantum dots

Physical review. B, Condensed matter and materials physics, 2005-09, Vol.72 (11), Article 115416

2005

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Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

Journal of crystal growth, 2017-11, Vol.478, p.205-211

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Fabrication and optical properties of silicon nanopillars

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12074-5

2014

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An electron–hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements

Nanotechnology, 2009-04, Vol.20 (17), p.175401-175401

2009

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Raman resonance in the strained Ge quantum dot array

Nanotechnology, 2008-07, Vol.19 (27), p.275402-275402

2008

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Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(1 1 1) system

Journal of crystal growth, 2009-07, Vol.311 (15), p.3898-3903

2009

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Optical phonons of GeSbTe alloys: Influence of structural disorder

Journal of alloys and compounds, 2023-05, Vol.942, p.169122, Article 169122

2023

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RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

Thin solid films, 2000-07, Vol.369 (1-2), p.79-83

2000

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Properties of silicon oversaturated with implanted hydrogen

Thin solid films, 2002-02, Vol.403, p.500-504

2002

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Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties

Nanotechnology, 2001-12, Vol.12 (4), p.437-440

2001

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Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Journal of applied physics, 2014-04, Vol.115 (14)

2014

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Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Folded acoustic phonons in Si/Ge superlattices with Ge quantum dots

Journal of experimental and theoretical physics, 2010-01, Vol.111 (6), p.1003-1009

Talochkin, A. B.

2010

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Inelastic strain relaxation in the Ge quantum dot array

Applied physics letters, 2007-08, Vol.91 (9), p.093127-093127-3

2007

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Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Journal of experimental and theoretical physics, 2011-09, Vol.113 (3), p.510-515

2011

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Optical phonons in Ge quantum dots obtained on Si(111)

JETP letters, 2002-03, Vol.75 (6), p.264-267

2002

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Raman resonance in the strained Gequantum dot array

Nanotechnology, 2008-07, Vol.19 (27), p.275402 (6)-275402 (6)

2008

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Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.907-911

2011

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Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

Physics of the solid state, 2004-01, Vol.46 (1), p.80-84

2004

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Circularly polarized Raman scattering in silicon

Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal

Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

Strain in Ultrathin SiGeSn Layers in a Silicon Matrix

Resonance Raman scattering by optical phonons in unstrained germanium quantum dots

Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Fabrication and optical properties of silicon nanopillars

An electron–hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements

Raman resonance in the strained Ge quantum dot array

Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(1 1 1) system

Optical phonons of GeSbTe alloys: Influence of structural disorder

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

Properties of silicon oversaturated with implanted hydrogen

Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties

Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Folded acoustic phonons in Si/Ge superlattices with Ge quantum dots

Inelastic strain relaxation in the Ge quantum dot array

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Optical phonons in Ge quantum dots obtained on Si(111)

Raman resonance in the strained Gequantum dot array

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

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