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High-Temperature Precipitation of Impurities in Metals

Physics of the solid state, 2022-06, Vol.64 (6), p.340-346

2022

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A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystals

Journal of crystal growth, 2012-05, Vol.346 (1), p.45-49

2012

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Simulation of the creation of a defect structure of dislocation-free germanium single crystals

Journal of crystal growth, 2020-03, Vol.533, p.125472, Article 125472

2020

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High-Temperature Precipitation of Impurities within the Vlasov Model for Solids

Crystallography reports, 2019-07, Vol.64 (4), p.581-585

2019

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Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state

Physics of the solid state, 2016-10, Vol.58 (10), p.2050-2054

2016

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Physical nature of grown-in microdefects in Czochralski-grown silicon and their transformation during various technological effects

Physica status solidi. A, Applied research, 2003-12, Vol.200 (2), p.297-306

2003

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Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon

Semiconductor science and technology, 2002-02, Vol.17 (2), p.104-113, Article 104

2002

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Complexation in germanium in accordance with Vlasov's model for solids

Journal of crystal growth, 2020-12, Vol.552, p.125928, Article 125928

2020

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Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

Crystal research and technology (1979), 2002-09, Vol.37 (9), p.983-1010

2002

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About the simulation of primary grown-in microdefects in dislocation-free silicon single-crystal formation

Canadian journal of physics, 2007-12, Vol.85 (12), p.1459-1471

2007

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Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review)

Physics of the solid state, 2016-03, Vol.58 (3), p.427-437

2016

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On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory

Physics of the solid state, 2014-10, Vol.56 (10), p.2043-2049

2014

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Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2004-11, Vol.230-232, p.177-198

2004

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Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals

Physics of the solid state, 2013-02, Vol.55 (2), p.282-287

2013

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Kinetics of high-temperature precipitation in dislocation-free silicon single crystals

Physics of the solid state, 2010-10, Vol.52 (10), p.2063-2069

2010

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Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of As-grown silicon crystals

Physics of the solid state, 2011, Vol.53 (1), p.119-126

2011

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Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals

Physics of the solid state, 2010-09, Vol.52 (9), p.1880-1886

2010

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The real structure of the crystal according to vlasov model

Physics & Astronomy International Journal, 2018, Vol.2 (3), p.218-222

2018

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Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals

Crystallography reports, 2012-12, Vol.57 (7), p.898-902

2012

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Formation of microdefects in semiconductor silicon

Crystallography reports, 2004-03, Vol.49 (2), p.188-192

2004

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Modeling of defect formation processes in dislocation-free silicon single crystals

Crystallography reports, 2010-07, Vol.55 (4), p.632-637

2010

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On the recombination of intrinsic point defects in dislocation-free silicon single crystals

Physics of the solid state, 2007-03, Vol.49 (3), p.467-471

2007

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Structural Scheme of Information System for Defect Engineering of Dislocation-free Silicon Single Crystals

Science and technology (Rosemead, Calif.), 2012-12, Vol.2 (5), p.130-134

2012

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A New Method for Research of Grown-In Microdefects in Dislocation-Free Silicon Single Crystals

Journal of crystallization process and technology, 2011-07, Vol.1 (2), p.13-17

2011

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Modeling of the defect structure in dislocation-free silicon single crystals

Crystallography reports, 2008-12, Vol.53 (7), p.1124-1132

2008

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High-Temperature Precipitation of Impurities in Metals

A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystals

Simulation of the creation of a defect structure of dislocation-free germanium single crystals

High-Temperature Precipitation of Impurities within the Vlasov Model for Solids

Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state

Physical nature of grown-in microdefects in Czochralski-grown silicon and their transformation during various technological effects

Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon

Complexation in germanium in accordance with Vlasov's model for solids

Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

About the simulation of primary grown-in microdefects in dislocation-free silicon single-crystal formation

Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review)

On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory

Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon

Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals

Kinetics of high-temperature precipitation in dislocation-free silicon single crystals

Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of As-grown silicon crystals

Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals

The real structure of the crystal according to vlasov model

Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals

Formation of microdefects in semiconductor silicon

Modeling of defect formation processes in dislocation-free silicon single crystals

On the recombination of intrinsic point defects in dislocation-free silicon single crystals

Structural Scheme of Information System for Defect Engineering of Dislocation-free Silicon Single Crystals

A New Method for Research of Grown-In Microdefects in Dislocation-Free Silicon Single Crystals

Modeling of the defect structure in dislocation-free silicon single crystals

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