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Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

Nanotechnology, 2020-05, Vol.31 (29), p.294003-294003

2020

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Optical Properties of Cu2O Nanowhiskers

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (12), p.543-549

2023

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Room-temperature light emission from a highly strained Si/Ge superlattice

Applied physics letters, 2003-10, Vol.83 (15), p.3084-3086

2003

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Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

Journal of crystal growth, 2015-09, Vol.425, p.172-176

2015

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Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films

Physics of the solid state, 2019-03, Vol.61 (3), p.402-407

2019

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Directional emission from beryllium doped GaAs/AlGaAs nanowires

Technical physics letters, 2017-09, Vol.43 (9), p.811-813

2017

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Controlled thinning and surface smoothening of silicon nanopillars

Nanotechnology, 2009-11, Vol.20 (44), p.445303-445303

2009

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Transient carrier transfer in tunnel injection structures

Applied physics letters, 2008-07, Vol.93 (3), p.031105-031105-3

2008

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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

Physica status solidi. PSS-RRL. Rapid research letters, 2010-07, Vol.4 (7), p.175-177

2010

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Photoluminescence of isolated quantum dots in metastable InAs arrays

Nanotechnology, 2002-04, Vol.13 (2), p.143-148

2002

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Nanoscale research letters, 2006-12, Vol.1 (2), p.137-153, Article 137

2006

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Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates

Nanotechnology, 2001-12, Vol.12 (4), p.512-514

2001

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Room temperature electroluminescence from multilayer GeSi heterostructures

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (6), p.1390-1394

2006

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Transient spectroscopy of InAs quantum dot molecules

Applied physics letters, 2004-07, Vol.85 (2), p.284-286

2004

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Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

Physics of the solid state, 2007-06, Vol.49 (6), p.1184-1190

2007

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Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

Physica status solidi. A, Applied research, 2003-07, Vol.198 (1), p.R4-R6

2003

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Temperature quenching of spontaneous emission in tunnel-injection nanostructures

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1483-1492

2015

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Sb mediated formation of Ge/Si quantum dots: Growth and properties

Thin solid films, 2012-02, Vol.520 (8), p.3322-3325

2012

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Pseudomorphic GeSn/Ge (001) heterostructures

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1452-1455

2013

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Room Temperature Superlinear Power Dependence of Photoluminescence from Defect-Free Si/Ge Quantum Dot Multilayer Structures

Physica status solidi. B. Basic research, 2002-07, Vol.232 (1), p.R1-R3

2002

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Resonances related to an array of InAs quantum dots and controlled by an external electric field

Semiconductors (Woodbury, N.Y.), 2007-02, Vol.41 (2), p.197-204

2007

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Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation

Journal of applied physics, 2009-09, Vol.106 (5), p.053101-053101-8

2009

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Threshold of stimulated emission in multivalley lead salts

Journal of applied physics, 1995-12, Vol.78 (12), p.7247-7254

1995

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TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature

Microscopy and microanalysis, 2003-09, Vol.9 (S03), p.282-283

2003

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Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

Semiconductors (Woodbury, N.Y.), 2013-10, Vol.47 (10), p.1346-1350

2013

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Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

Optical Properties of Cu2O Nanowhiskers

Room-temperature light emission from a highly strained Si/Ge superlattice

Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films

Directional emission from beryllium doped GaAs/AlGaAs nanowires

Controlled thinning and surface smoothening of silicon nanopillars

Transient carrier transfer in tunnel injection structures

Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

Photoluminescence of isolated quantum dots in metastable InAs arrays

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates

Room temperature electroluminescence from multilayer GeSi heterostructures

Transient spectroscopy of InAs quantum dot molecules

Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

Temperature quenching of spontaneous emission in tunnel-injection nanostructures

Sb mediated formation of Ge/Si quantum dots: Growth and properties

Pseudomorphic GeSn/Ge (001) heterostructures

Room Temperature Superlinear Power Dependence of Photoluminescence from Defect-Free Si/Ge Quantum Dot Multilayer Structures

Resonances related to an array of InAs quantum dots and controlled by an external electric field

Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation

Threshold of stimulated emission in multivalley lead salts

TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature

Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

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