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Spectroscopic ellipsometry study of ion-implanted Si(100) wafers

Journal of applied physics, 2002-03, Vol.91 (5), p.2936-2941

2002

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Four-wave mixing in silicon wire waveguides

Optics express, 2005-06, Vol.13 (12), p.4629-4637

2005

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Microphotonics devices based on silicon microfabrication technology

IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.232-240

2005

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Model-dielectric-function analysis of ion-implanted Si(100) wafers

Journal of applied physics, 2003-01, Vol.93 (1), p.115-120

2003

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Optical properties of self-ion-implanted Si(100) studied by spectroscopic ellipsometry

Journal of applied physics, 2001-07, Vol.90 (1), p.87-93

2001

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Silicon wire waveguiding system: Fundamental characteristics and applications

Electronics & communications in Japan. Part 2, Electronics, 2006-03, Vol.89 (3), p.42-55

2006

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First Operation of the Flinak/LiPb Twin Loop Orosh 2 i-2 with a 3T SC Magnet for R&D of Liquid Blanket for Fusion Reactor

Fusion science and technology, 2015-09, Vol.68 (2), p.303-307

2015

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First Operation of the Flinak/LiPb Twin Loop Orosh2i-2 with a 3T SC Magnet for R&D of Liquid Blanket for Fusion Reactor

Fusion science and technology, 2015-09, Vol.68 (2), p.303-307

2015

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Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers

Japanese Journal of Applied Physics, 2001, Vol.40 (9R), p.5211-5216

2001

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Optical properties of TiN films deposited by direct current reactive sputtering

Journal of applied physics, 2000-02, Vol.87 (3), p.1264-1269

2000

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Source/drain ion implantation into ultra-thin-single-crystalline-silicon-layer of Separation by IMplanted OXygen (SIMOX) wafers

Japanese Journal of Applied Physics, 1996-10, Vol.35 (10), p.5237-5241

1996

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Visualization of sphingolipids and phospholipids in the fundic gland mucosa of human stomach using imaging mass spectrometry

World journal of gastrointestinal pathophysiology, 2016-05, Vol.7 (2), p.235-241

2016

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Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH[sub 4] Reduction of WF[sub 6]

Journal of the Electrochemical Society, 2001, Vol.148 (4), p.G229

2001

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Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1050

1998

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Charging damage in a hybrid parallel-scanning medium-eurrent ion implanter

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-02, Vol.108 (3), p.320-323

Takahashi, Mitsutoshi

1996

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Oxygen-doped Si epitaxial film (OXSEF)

Japanese Journal of Applied Physics, 1987-11, Vol.26 (11), p.1830-1837

1987

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Barrier Effect of Electron Cyclotron Resonance Sputtered Films Against Water and Hydrogen Molecules Permeation

Journal of the Electrochemical Society, 2002-11, Vol.149 (11), p.B487

2002

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Determination of hydrogen concentration in PCVD silicon nitride films by elastic recoil detection analysis

Japanese Journal of Applied Physics, 1987-09, Vol.26 (9), p.1606-1607

1987

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In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As + Ion Implantation

Japanese Journal of Applied Physics, 1981, Vol.20 (11), p.2211

1981

Volltextzugriff (PDF)

Fully depleted 20-nm SOI CMOSFETs with W-clad gate/source/drain layers

IEEE transactions on electron devices, 2001-07, Vol.48 (7), p.1380-1385

2001

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Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions

IEEE transactions on electron devices, 1998-05, Vol.45 (5), p.1071-1076

1998

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Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Journal of the Electrochemical Society, 1997-03, Vol.144 (3), p.1020-1024

1997

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Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth

Japanese Journal of Applied Physics, 1981, Vol.20 (12), p.L909

1981

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Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates

Journal of the Electrochemical Society, 1998-05, Vol.145 (5), p.1795-1800

1998

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High Energy As + Ion Implantation into Si–Arsenic Profiles and Electrical Activation Characteristics

Japanese Journal of Applied Physics, 1981-01, Vol.20 (11), p.2205

1981

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Spectroscopic ellipsometry study of ion-implanted Si(100) wafers

Four-wave mixing in silicon wire waveguides

Microphotonics devices based on silicon microfabrication technology

Model-dielectric-function analysis of ion-implanted Si(100) wafers

Optical properties of self-ion-implanted Si(100) studied by spectroscopic ellipsometry

Silicon wire waveguiding system: Fundamental characteristics and applications

First Operation of the Flinak/LiPb Twin Loop Orosh 2 i-2 with a 3T SC Magnet for R&D of Liquid Blanket for Fusion Reactor

First Operation of the Flinak/LiPb Twin Loop Orosh2i-2 with a 3T SC Magnet for R&D of Liquid Blanket for Fusion Reactor

Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers

Optical properties of TiN films deposited by direct current reactive sputtering

Source/drain ion implantation into ultra-thin-single-crystalline-silicon-layer of Separation by IMplanted OXygen (SIMOX) wafers

Visualization of sphingolipids and phospholipids in the fundic gland mucosa of human stomach using imaging mass spectrometry

Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH[sub 4] Reduction of WF[sub 6]

Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

Charging damage in a hybrid parallel-scanning medium-eurrent ion implanter

Oxygen-doped Si epitaxial film (OXSEF)

Barrier Effect of Electron Cyclotron Resonance Sputtered Films Against Water and Hydrogen Molecules Permeation

Determination of hydrogen concentration in PCVD silicon nitride films by elastic recoil detection analysis

In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As + Ion Implantation

Fully depleted 20-nm SOI CMOSFETs with W-clad gate/source/drain layers

Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions

Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth

Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates

High Energy As + Ion Implantation into Si–Arsenic Profiles and Electrical Activation Characteristics

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