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Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.649-654

2008

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IEEE_Xplore

High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2809-2815

2006

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IEEE_Xplore

Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3159-3166

2008

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IEEE_Xplore

Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1651-1658

2009

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IEEE_Xplore

Photodiode Packaging Technique Using Ball Lens and Offset Parabolic Mirror

Journal of lightwave technology, 2009-09, Vol.27 (17), p.3874-3879

2009

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IEEE_Xplore

Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

IEEE transactions on electron devices, 2009-04, Vol.56 (4), p.627-633

2009

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IEEE_Xplore

Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1612-1618

2001

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IEEE_Xplore

On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

IEEE transactions on electron devices, 2005-05, Vol.52 (5), p.993-998

2005

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IEEE_Xplore

Device Design of High-Speed Source-Heterojunction-MOS Transistors (SHOTs): Optimization of Source Band Offset and Graded Heterojunction

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2598-2605

2007

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IEEE_Xplore

1.3-μm uncooled DFB laser-diode module with a coupled differential feed for 10-Gb/s ethernet applications

Journal of lightwave technology, 2004-02, Vol.22 (2), p.574-581

2004

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SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1114-1120

2001

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Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

Applied surface science, 2004-03, Vol.224 (1), p.241-247

2004

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Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures

IEEE transactions on electron devices, 2002-01, Vol.49 (1), p.7-14

2002

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IEEE_Xplore

Device design for subthreshold slope and threshold voltage control in sub-100-nm fully depleted SOI MOSFETs

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2161-2167

2004

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IEEE_Xplore

Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

Thin solid films, 2006-06, Vol.508 (1), p.359-362

2006

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A new strained-SOI/GOI dual CMOS technology based on local condensation technique

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.80-81

2005

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IEEE_Xplore

Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs

IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.1042-1048

2002

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IEEE_Xplore

Impact of Amino Acids Nutrition Following Gastrectomy in Gastric Cancer Patients

Anticancer research, 2022-07, Vol.42 (7), p.3637-3643

2022

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Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

Thin solid films, 2006-06, Vol.508 (1), p.251-255

2006

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Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

Applied surface science, 2009-11, Vol.256 (3), p.823-829

2009

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Device Design of HighaSpeed SourceaHeterojunctionaMOS Transistors (SHOTs): Optimization of Source Band Offset and Graded Heterojunction

IEEE transactions on electron devices, 2007-01, Vol.54 (10)

2007

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Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

Applied surface science, 2004-03, Vol.224 (1), p.113-116

2004

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Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 1996-08, Vol.80 (3), p.1567-1577

1996

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Verfügbarkeit prüfen

Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates

Thin solid films, 2006-06, Vol.508 (1), p.112-116

2006

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1.3-/spl mu/m uncooled DFB laser-diode module with a coupled differential feed for 10-Gb/s ethernet applications

Journal of lightwave technology, 2004-02, Vol.22 (2), p.574-581

2004

Link zum Volltext
IEEE_Xplore

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Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs

Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

Photodiode Packaging Technique Using Ball Lens and Offset Parabolic Mirror

Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

Device Design of High-Speed Source-Heterojunction-MOS Transistors (SHOTs): Optimization of Source Band Offset and Graded Heterojunction

1.3-μm uncooled DFB laser-diode module with a coupled differential feed for 10-Gb/s ethernet applications

SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs

Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures

Device design for subthreshold slope and threshold voltage control in sub-100-nm fully depleted SOI MOSFETs

Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

A new strained-SOI/GOI dual CMOS technology based on local condensation technique

Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs

Impact of Amino Acids Nutrition Following Gastrectomy in Gastric Cancer Patients

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

Device Design of HighaSpeed SourceaHeterojunctionaMOS Transistors (SHOTs): Optimization of Source Band Offset and Graded Heterojunction

Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors

Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates

1.3-/spl mu/m uncooled DFB laser-diode module with a coupled differential feed for 10-Gb/s ethernet applications

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