UB Paderborn / Katalog / Suche / in CDI

In Situ Study of Reduction Process of CuO Paste and Its Effect on Bondability of Cu-to-Cu Joints

Journal of electronic materials, 2018-04, Vol.47 (4), p.2193-2197

2018

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Design and evaluation of omnidirectional one-dimensional photonic crystals

Journal of applied physics, 2003-01, Vol.93 (2), p.819-830

2003

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Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness

Applied physics letters, 2004-05, Vol.84 (22), p.4562-4564

2004

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Oxide and Nitride Semiconductors: Processing, Properties, and Applications

1. Aufl., 2009

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Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

Journal of applied physics, 1998-10, Vol.84 (7), p.3912-3918

1998

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Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN

Journal of physical chemistry. C, 2010-12, Vol.114 (51), p.22727-22735

2010

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Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN

The Journal of chemical physics, 2007-02, Vol.126 (5), p.054708-054708

2007

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Correlation between grain size and optical properties in zinc oxide thin films

Applied physics letters, 2002-08, Vol.81 (7), p.1231-1233

2002

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Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy

Journal of crystal growth, 2002-04, Vol.237, p.538-543

2002

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Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer

Applied physics letters, 2000-01, Vol.76 (5), p.559-561

2000

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Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

IEEE photonics technology letters, 2012-03, Vol.24 (6), p.449-451

2012

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Ordered Arrays of ZnO Nanorods Grown on Periodically Polarity-Inverted Surfaces

Nano letters, 2008-08, Vol.8 (8), p.2419-2422

2008

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High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2004-05, Vol.265 (3), p.375-381

2004

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Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy

Journal of applied physics, 2002-10, Vol.92 (8), p.4354-4360

2002

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p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing

Journal of crystal growth, 2013-01, Vol.363, p.190-194

2013

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Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Journal of physics. D, Applied physics, 2013-04, Vol.46 (15), p.155104-1-4, Article 155104

2013

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Second harmonic generation in periodically polarity-inverted zinc oxide

Optics express, 2010-04, Vol.18 (8), p.7851-7856

2010

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High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2004-04, Vol.265 (1), p.34-40

2004

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Role of Double MgO/ZnO Buffer Layers on Defect Reduction of ZnO Layers Grown on c-Sapphire by P-MBE

材料科学与工程：中英文A版, 2011, Vol.1 (3), p.380-389

Agus Setiawan Takafumi Yao

2011

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Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

Applied physics letters, 2009-06, Vol.94 (24)

2009

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Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2886-2888

2012

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Investigation of nonpolar (1 1 2¯ 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2010-07, Vol.312 (15), p.2196-2200

2010

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Band alignment at a ZnO/GaN (0001) heterointerface

Applied physics letters, 2001-05, Vol.78 (21), p.3349-3351

2001

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Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn∕O flux ratios

Journal of applied physics, 2004-10, Vol.96 (7), p.3763-3768

2004

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Homoepitaxial Growth of High-Quality Zn-Polar ZnO Films by Plasma-Assisted Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2003-08, Vol.42 (Part 2, No. 8B), p.L1002-L1005

2003

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In Situ Study of Reduction Process of CuO Paste and Its Effect on Bondability of Cu-to-Cu Joints

Design and evaluation of omnidirectional one-dimensional photonic crystals

Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness

Oxide and Nitride Semiconductors: Processing, Properties, and Applications

Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN

Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN

Correlation between grain size and optical properties in zinc oxide thin films

Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy

Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer

Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

Ordered Arrays of ZnO Nanorods Grown on Periodically Polarity-Inverted Surfaces

High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy

Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy

p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing

Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Second harmonic generation in periodically polarity-inverted zinc oxide

High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

Role of Double MgO/ZnO Buffer Layers on Defect Reduction of ZnO Layers Grown on c-Sapphire by P-MBE

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures

Investigation of nonpolar (1 1 2¯ 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy

Band alignment at a ZnO/GaN (0001) heterointerface

Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn∕O flux ratios

Homoepitaxial Growth of High-Quality Zn-Polar ZnO Films by Plasma-Assisted Molecular Beam Epitaxy

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