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Polytype inclusions and polytype stability in silicon-carbide crystals

Semiconductors (Woodbury, N.Y.), 2016-04, Vol.50 (4), p.494-501

2016

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Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium

Semiconductors (Woodbury, N.Y.), 2016-06, Vol.50 (6), p.775-777

2016

Volltextzugriff (PDF)

Defect structure of 4H silicon carbide ingots

Journal of crystal growth, 2011-03, Vol.318 (1), p.394-396

2011

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Investigation of growth processes of ingots of silicon carbide single crystals

Journal of crystal growth, 1978-01, Vol.43 (2), p.209-212

1978

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Growth of bulk SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 1995, Vol.29 (1), p.83-89

Tairov, Yu.M.

1995

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Mechanisms of defect formation in ingots of 4H silicon carbide polytype

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.277-283

2011

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Defect formation in silicon carbide large-scale ingots grown by sublimation technique

Journal of crystal growth, 2005-02, Vol.275 (1), p.e485-e489

2005

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The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth

Journal of crystal growth, 1999-03, Vol.198, p.1011-1014

1999

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Stress and misoriented area formation under large silicon carbide boule growth

Journal of crystal growth, 1999-03, Vol.198, p.1015-1018

1999

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SnO 2 based gas sensitive sensor

Thin solid films, 1997, Vol.296 (1), p.168-171

1997

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Study of silicon carbide epitaxial growth kinetics in the SiC-C system

Journal of crystal growth, 1979-01, Vol.46 (2), p.269-273

1979

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SnO2 based gas sensitive sensor

Thin solid films, 1997-03, Vol.296 (1-2), p.168-171

1997

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General principles of growing large-size single crystals of various silicon carbide polytypes

Journal of crystal growth, 1981-01, Vol.52 (1), p.146-150

1981

Volltextzugriff (PDF)

The In/PbTe barrier structures with a thin intermediate insulating layer

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (12), p.1365-1369

2000

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Determination of size and concentration of critical clusters of silicon carbide in the vapour phase in homogeneous nucleation process

Solid state communications, 1979-02, Vol.29 (8), p.iv-iv

1979

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Investigations of kinetic and thermal conditions of silicon carbide epitaxial layer growth from the vapour phase

Journal of crystal growth, 1979-03, Vol.46 (3), p.403-409

1979

Volltextzugriff (PDF)

Studies of growth processes from the vapour phase of silicon carbide epitaxial layers

Journal of crystal growth, 1977-09, Vol.40 (1), p.59-68

1977

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Studies of growth processes from the vapour phase of silicon carbide epitaxial layers: III. Thermodynamics of the high temperature processes in the system SiC-N 2 at constant volume

Journal of crystal growth, 1977, Vol.40 (1), p.59-68

1977

Volltextzugriff (PDF)

Studies of growth processes in silicon carbide epitaxial layers from the vapour phase

Journal of crystal growth, 1976-02, Vol.32 (2), p.170-178

1976

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Studies of growth processes in silicon carbide epitaxial layers from the vapour phase: II. Thermodynamic analysis of equilibrium in the SiC-H 2 system at constant hydrogen pressure

Journal of crystal growth, 1976, Vol.32 (2), p.170-178

1976

Volltextzugriff (PDF)

Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase

Journal of crystal growth, 1976-01, Vol.36 (1), p.147-151

1976

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Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132), 1998, p.196-198

1998

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Determination of size and concentration of critical clusters of silicon carbide in the vapour phase in homogeneous nucleation process

The Journal of physics and chemistry of solids, 1979, Vol.40 (9), p.707-713

1979

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Silicon carbide epitaxial growth from the vapour phase and properties of epitaxial layers

Journal of crystal growth, 1976-01, Vol.34 (2), p.298-300

1976

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Growth of silicon carbide crystals by vapour-liquid-solid (VLS) mechanism in the sublimation method

Journal of crystal growth, 1973-01, Vol.20 (2), p.155-157

1973

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Polytype inclusions and polytype stability in silicon-carbide crystals

Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium

Defect structure of 4H silicon carbide ingots

Investigation of growth processes of ingots of silicon carbide single crystals

Growth of bulk SiC

Mechanisms of defect formation in ingots of 4H silicon carbide polytype

Defect formation in silicon carbide large-scale ingots grown by sublimation technique

The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth

Stress and misoriented area formation under large silicon carbide boule growth

SnO 2 based gas sensitive sensor

Study of silicon carbide epitaxial growth kinetics in the SiC-C system

SnO2 based gas sensitive sensor

General principles of growing large-size single crystals of various silicon carbide polytypes

The In/PbTe barrier structures with a thin intermediate insulating layer

Determination of size and concentration of critical clusters of silicon carbide in the vapour phase in homogeneous nucleation process

Investigations of kinetic and thermal conditions of silicon carbide epitaxial layer growth from the vapour phase

Studies of growth processes from the vapour phase of silicon carbide epitaxial layers

Studies of growth processes from the vapour phase of silicon carbide epitaxial layers: III. Thermodynamics of the high temperature processes in the system SiC-N 2 at constant volume

Studies of growth processes in silicon carbide epitaxial layers from the vapour phase

Studies of growth processes in silicon carbide epitaxial layers from the vapour phase: II. Thermodynamic analysis of equilibrium in the SiC-H 2 system at constant hydrogen pressure

Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase

Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K

Determination of size and concentration of critical clusters of silicon carbide in the vapour phase in homogeneous nucleation process

Silicon carbide epitaxial growth from the vapour phase and properties of epitaxial layers

Growth of silicon carbide crystals by vapour-liquid-solid (VLS) mechanism in the sublimation method

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