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Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor

IEEE electron device letters, 1999-07, Vol.20 (7), p.326-328

1999

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Optimization of a novel self-planarizing Au metallization process for practical VLSI applications

Japanese Journal of Applied Physics, 1996, Vol.35 (11), p.5674-5679

1996

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Reaction mechanism of selective plating between TiW and Au:An innovative metallization scheme for high-speed electronics

Japanese Journal of Applied Physics, 1996, Vol.35 (12A), p.6344-6345

1996

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Downsizing gold wires to submicron range : a self-planarized Au metallization process by selective electroplating for Si LSI applications

Japanese Journal of Applied Physics, 1995, Vol.34 (7B), p.L945-L947

1995

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Fabrication of a novel oxygen sensor with CMOS compatible processes

Sensors and actuators. B, Chemical, 1998-02, Vol.46 (2), p.155-159

1998

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Effects of Oxygen Addition in the CCl 4 Reactive Ion Etching of a-SiC:H Films

Japanese Journal of Applied Physics, 1992-12, Vol.31 (12R), p.4061

1992

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Cross-sectional transmission electron microscopy study of Si/SiGe heterojunction bipolar transistor structure grown by ultra-high vacuum chemical vapor deposition

Japanese Journal of Applied Physics, 1997-07, Vol.36 (7B), p.L903-L905

1997

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n- Si /i-p-i SiGe/n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy

Journal of applied physics, 1999-08, Vol.86 (3), p.1463-1466

1999

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Selective Electroplating Between Metal and Semiconductor Electrodes

Journal of the Electrochemical Society, 1996-11, Vol.143 (11), p.3517-3521

1996

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Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

Thin solid films, 1998-11, Vol.333 (1), p.13-15

1998

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High-quality n-Si/i-p+-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy

Journal of materials science. Materials in electronics, 1999-09, Vol.10 (7), p.525-528

1999

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Once more into the barrier: Reply to another comment by B.D. Kay and M.E. Coltrin

Surface science, 1988-11, Vol.205 (3), p.L813-L815

1988

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Activated chemisorption of methane and tunneling: a second look: Reply to a comment by B.D. Kay and M.E. Coltrin

Surface science, 1988, Vol.198 (3), p.L380-L385

1988

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Recessed microelectrode array for a micro flow-through system allowing on-line multianalyte determination in vivo

Fresenius' journal of analytical chemistry, 1999-05, Vol.364 (1-2), p.66-71

1999

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Activated chemisorption of methane and tunneling

Surface science, 1987, Vol.179 (1), p.L19-L25

1987

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A psychometric assessment of the St. George's respiratory questionnaire in patients with COPD using Rasch model analysis

Health and quality of life outcomes, 2015-08, Vol.13 (1), p.131-131, Article 131

2015

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Effects of oxygen addition in the CCl4 reactive ion etching of a-SiC:H films

Japanese journal of applied physics, 1992, Vol.31 (12A), p.4061-4065

1992

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High-quality n-Si/i-p super(+)-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy

Journal of materials science. Materials in electronics, 1999-09, Vol.10 (7), p.525-528

1999

Volltextzugriff (PDF)

Once more into the barrier

Surface science, 1988-11, Vol.205 (3), p.L813-L815

1988

Volltextzugriff (PDF)

Activated chemisorption of methane and tunneling: a second look

Surface science, 1988-01, Vol.198 (3), p.L380-L385

1988

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Effects of oxygen addition in the CCl sub(4) reactive ion etching of a-SiC:H films

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-01, Vol.31 (12A), p.4061-4065

1992

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Activated chemisorption of methane and tunneling

Surface science letters, 1987, Vol.179 (1), p.L19-L25

1987

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Fabrication of gated wedge-shaped field emitter array by plasma etching and gold plating

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings, 1995, p.191-194

1995

Volltextzugriff (PDF)

DYNAMICS OF DISSOCIATIVE CHEMISORPTION: METHANE ON TUNGSTEN SINGLE CRYSTAL SURFACES

LO, TAI-CHIN

1983

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900 MHz 7.4 W SiGe heterojunction bipolar transistor

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458), 1999, p.138-141

1999

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Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor

Optimization of a novel self-planarizing Au metallization process for practical VLSI applications

Reaction mechanism of selective plating between TiW and Au:An innovative metallization scheme for high-speed electronics

Downsizing gold wires to submicron range : a self-planarized Au metallization process by selective electroplating for Si LSI applications

Fabrication of a novel oxygen sensor with CMOS compatible processes

Effects of Oxygen Addition in the CCl 4 Reactive Ion Etching of a-SiC:H Films

Cross-sectional transmission electron microscopy study of Si/SiGe heterojunction bipolar transistor structure grown by ultra-high vacuum chemical vapor deposition

n- Si /i-p-i SiGe/n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy

Selective Electroplating Between Metal and Semiconductor Electrodes

Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

High-quality n-Si/i-p+-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy

Once more into the barrier: Reply to another comment by B.D. Kay and M.E. Coltrin

Activated chemisorption of methane and tunneling: a second look: Reply to a comment by B.D. Kay and M.E. Coltrin

Recessed microelectrode array for a micro flow-through system allowing on-line multianalyte determination in vivo

Activated chemisorption of methane and tunneling

A psychometric assessment of the St. George's respiratory questionnaire in patients with COPD using Rasch model analysis

Effects of oxygen addition in the CCl4 reactive ion etching of a-SiC:H films

High-quality n-Si/i-p super(+)-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy

Once more into the barrier

Activated chemisorption of methane and tunneling: a second look

Effects of oxygen addition in the CCl sub(4) reactive ion etching of a-SiC:H films

Activated chemisorption of methane and tunneling

Fabrication of gated wedge-shaped field emitter array by plasma etching and gold plating

DYNAMICS OF DISSOCIATIVE CHEMISORPTION: METHANE ON TUNGSTEN SINGLE CRYSTAL SURFACES

900 MHz 7.4 W SiGe heterojunction bipolar transistor

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