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Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory

IEEE electron device letters, 2017-01, Vol.38 (1), p.48-51

2017

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Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String

IEEE electron device letters, 2016-08, Vol.37 (8), p.998-1001

2016

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SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2367-2373

2016

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A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1073-1079

2006

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Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2602-2608

2005

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Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory

IEEE electron device letters, 2015-02, Vol.36 (2), p.135-137

2015

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Statistical Characterization and Modeling of the Temporal Evolutions of \Delta V Distribution in NBTI Recovery in Nanometer MOSFETs

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.978-984

2013

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A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.623-630

2011

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A Comparative Study of NBTI and RTN Amplitude Distributions in High- \kappa Gate Dielectric pMOSFETs

IEEE electron device letters, 2012-02, Vol.33 (2), p.176-178

2012

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Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1340-1346

2006

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Investigation of random telegraph noise amplitudes in hafnium oxide resistive memory devices

2014 IEEE International Reliability Physics Symposium, 2014, p.MY.2.1-MY.2.5

2014

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V Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1371-1376

2012

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Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.103-108

2006

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Effects of length scaling on electromigration in dual-damascene copper interconnects

Microelectronics and reliability, 2008-04, Vol.48 (4), p.569-577

2008

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Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density

IEEE electron device letters, 2012-04, Vol.33 (4), p.591-593

2012

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Simulation of read-disturb-induced inference accuracy degradation in an RRAM-based neuromorphic circuit

Journal of computational electronics, 2023-02, Vol.22 (1), p.596-600

2023

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Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.2061-2066

2005

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A novel operation method to avoid over-erasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.808-814

2006

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Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

Applied physics letters, 2006-10, Vol.89 (16)

2006

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Effects of width scaling and layout variation on dual damascene copper interconnect electromigration

Microelectronics and reliability, 2007-12, Vol.47 (12), p.2100-2108

2007

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Variations of V Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect

IEEE electron device letters, 2011-04, Vol.32 (4), p.458-460

2011

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A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.541-546

2005

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Profiling of Nitride-Trap-Energy Distribution in SONOS Flash Memory by Using a Variable-Amplitude Low-Frequency Charge-Pumping Technique

IEEE electron device letters, 2007-09, Vol.28 (9), p.828-830

2007

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Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

IEEE electron device letters, 2009-11, Vol.30 (11), p.1188-1190

2009

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Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

IEEE electron device letters, 2018-11, Vol.39 (11), p.1648-1651

2018

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Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory

Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String

SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory

A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design

Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory

Statistical Characterization and Modeling of the Temporal Evolutions of \Delta V Distribution in NBTI Recovery in Nanometer MOSFETs

A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory

A Comparative Study of NBTI and RTN Amplitude Distributions in High- \kappa Gate Dielectric pMOSFETs

Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

Investigation of random telegraph noise amplitudes in hafnium oxide resistive memory devices

V Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect

Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

Effects of length scaling on electromigration in dual-damascene copper interconnects

Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density

Simulation of read-disturb-induced inference accuracy degradation in an RRAM-based neuromorphic circuit

Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling

A novel operation method to avoid over-erasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming

Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

Effects of width scaling and layout variation on dual damascene copper interconnect electromigration

Variations of V Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect

A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

Profiling of Nitride-Trap-Energy Distribution in SONOS Flash Memory by Using a Variable-Amplitude Low-Frequency Charge-Pumping Technique

Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

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