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A 100-MS/s 8-b CMOS subranging ADC with sustained parametric performance from 3.8 V down to 2.2 V

IEEE journal of solid-state circuits, 2001-03, Vol.36 (3), p.331-338

2001

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A 1.8 V 1.0 GS/s 10b Self-Calibrating Unified-Folding-Interpolating ADC With 9.1 ENOB at Nyquist Frequency

IEEE journal of solid-state circuits, 2009-12, Vol.44 (12), p.3294-3304

2009

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A 1.8-V 1.6-GSample/s 8-b self-calibrating folding ADC with 7.26 ENOB at Nyquist frequency

IEEE journal of solid-state circuits, 2004-12, Vol.39 (12), p.2107-2115

2004

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A quadruple well, quadruple polysilicon BiCMOS process for fast 16 Mb SRAM's

IEEE transactions on electron devices, 1994-12, Vol.41 (12), p.2318-2325

1994

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The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies

IEEE transactions on electron devices, 1995-07, Vol.42 (7), p.1277-1286

1995

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Demonstration of a p-channel BICFET in the GexSi1-x/Si system

IEEE electron device letters, 1989, Vol.10 (1), p.14-16

1989

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Design techniques for very low power ADCs

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169), 2001, p.141-144

2001

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An eight-terminal Kelvin-tapped bipolar transistor for extracting parasitic series resistances

IEEE transactions on electron devices, 1991-09, Vol.38 (9), p.2139-2154

1991

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A 1.8V 1.0GS/s 10b self-calibrating unified-folding-interpolating ADC with 9.1 ENOB at Nyquist frequency

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009, p.78-79,79a

2009

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A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 μm high-density BiCMOS SRAM technology

IEEE electron device letters, 1995-03, Vol.16 (3), p.88-90

1995

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GexSi1-x/silicon inversion-base transistors : theory of operation

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2108-2118

1992

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Very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 mu m high-density BiCMOS SRAM technology

Digest of technical papers - Symposium on VLSI Technology, 1994, p.161-162

1994

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GexSi1-x/silicon inversion-base transistors : experimental demonstration

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2119-2126

1992

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A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 mu mhigh-density BiCMOS SRAM technology

IEEE electron device letters, 1995-03, Vol.16 (3), p.88-90

1995

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Ge(x)Si(1-x)/silicon inversion-base transistors: theory of operation

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2108-2118

1992

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Reversibility of clip sterilizations

The Lancet (British edition), 1982-10, Vol.2 (8304), p.927-927

1982

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Ge(x)Si(1-x)/silicon inversion-base transistors:experimental demonstration

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2119-2126

1992

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Demonstration of a p-channel BICFET in the Ge sub(x)Si sub(1-x)/Si system

IEEE electron device letters, 1989-01, Vol.10 (1), p.14-16

1989

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Demonstration of a p-channel BICFET in the Ge(x)Si(1-x)/Si system ((bipolar inversion-channel field effect transitors))

IEEE electron device letters, 1989-01, Vol.10 (1), p.14-16

1989

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A novel DC measurement method for the accurate extraction of bipolar resistive parasitics

International Technical Digest on Electron Devices, 1990, p.365-368

1990

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A high-performance low-complexity bipolar technology using selective collector compensation

1992 International Technical Digest on Electron Devices Meeting, 1992, p.405-408

1992

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Optimization of two-dimensional collector doping profiles for submicron BiCMOS technologies

International Electron Devices Meeting 1991 [Technical Digest], 1991, p.869-872

1991

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A 100-MSPS 8-b CMOS subranging ADC with parametric operation from 3.8 V down to 2.2 V

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044), 2000, p.253-256

2000

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A high-performance quadruple well, quadruple poly BiCMOS process for fast 16 Mb SRAMs

1992 International Technical Digest on Electron Devices Meeting, 1992, p.819-822

1992

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Device structure characterization using the comparative capacitance–voltage technique

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1994-01, Vol.12 (1), p.332-335

1994

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A 100-MS/s 8-b CMOS subranging ADC with sustained parametric performance from 3.8 V down to 2.2 V

A 1.8 V 1.0 GS/s 10b Self-Calibrating Unified-Folding-Interpolating ADC With 9.1 ENOB at Nyquist Frequency

A 1.8-V 1.6-GSample/s 8-b self-calibrating folding ADC with 7.26 ENOB at Nyquist frequency

A quadruple well, quadruple polysilicon BiCMOS process for fast 16 Mb SRAM's

The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies

Demonstration of a p-channel BICFET in the GexSi1-x/Si system

Design techniques for very low power ADCs

An eight-terminal Kelvin-tapped bipolar transistor for extracting parasitic series resistances

A 1.8V 1.0GS/s 10b self-calibrating unified-folding-interpolating ADC with 9.1 ENOB at Nyquist frequency

A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 μm high-density BiCMOS SRAM technology

GexSi1-x/silicon inversion-base transistors : theory of operation

Very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 mu m high-density BiCMOS SRAM technology

GexSi1-x/silicon inversion-base transistors : experimental demonstration

A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 mu mhigh-density BiCMOS SRAM technology

Ge(x)Si(1-x)/silicon inversion-base transistors: theory of operation

Reversibility of clip sterilizations

Ge(x)Si(1-x)/silicon inversion-base transistors:experimental demonstration

Demonstration of a p-channel BICFET in the Ge sub(x)Si sub(1-x)/Si system

Demonstration of a p-channel BICFET in the Ge(x)Si(1-x)/Si system ((bipolar inversion-channel field effect transitors))

A novel DC measurement method for the accurate extraction of bipolar resistive parasitics

A high-performance low-complexity bipolar technology using selective collector compensation

Optimization of two-dimensional collector doping profiles for submicron BiCMOS technologies

A 100-MSPS 8-b CMOS subranging ADC with parametric operation from 3.8 V down to 2.2 V

A high-performance quadruple well, quadruple poly BiCMOS process for fast 16 Mb SRAMs

Device structure characterization using the comparative capacitance–voltage technique

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