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Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

ACS applied materials & interfaces, 2018-09, Vol.10 (35), p.29724-29729

2018

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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

IEEE electron device letters, 2017-08, Vol.38 (8), p.1097-1100

2017

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Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy

ACS applied materials & interfaces, 2019-05, Vol.11 (20), p.18517-18527

2019

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Band Alignment of ScxAl1-xN/GaN Heterojunctions

ACS applied materials & interfaces, 2020-11, Vol.12 (46), p.52192-52200

2020

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Toward gallium oxide power electronics

Science (American Association for the Advancement of Science), 2022-11, Vol.378 (6621), p.724-725

Tadjer, Marko J.

2022

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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

ACS nano, 2010-02, Vol.4 (2), p.1108-1114

2010

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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

IEEE electron device letters, 2012-01, Vol.33 (1), p.23-25

2012

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2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension

IEEE electron device letters, 2023-02, Vol.44 (2), p.221-224

2023

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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

IEEE electron device letters, 2013-09, Vol.34 (9), p.1115-1117

2013

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Narrowband Polaritonic Thermal Emitters Driven by Waste Heat

ACS omega, 2020-05, Vol.5 (19), p.10900-10908

2020

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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

Crystals (Basel), 2023-04, Vol.13 (5), p.736

2023

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Quasi-Two-Dimensional h‑BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

ACS applied materials & interfaces, 2017-06, Vol.9 (25), p.21322-21327

2017

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Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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Lifetime and Molecular Coupling in Surface Phonon Polariton Resonators

ACS omega, 2024-05, Vol.9 (19), p.21136-21143

2024

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A review of Ga2O3 materials, processing, and devices

Applied physics reviews, 2018-03, Vol.5 (1)

2018

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Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

Applied physics letters, 2016-05, Vol.108 (18)

2016

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A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

Applied physics reviews, 2022-03, Vol.9 (1)

2022

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Engineering the Spectral and Spatial Dispersion of Thermal Emission via Polariton–Phonon Strong Coupling

Nano letters, 2021-02, Vol.21 (4), p.1831-1838

2021

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A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Applied physics letters, 2021-10, Vol.119 (17)

2021

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Integration of polycrystalline Ga2O3 on diamond for thermal management

Applied physics letters, 2020-02, Vol.116 (6)

2020

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Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.893-897

2016

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Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Applied physics letters, 2022-08, Vol.121 (7)

2022

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Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

APL materials, 2019-03, Vol.7 (3), p.031118-031118-7

2019

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Thermal Management of Gallium Nitride Electronics

1, 2022

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Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy

Band Alignment of ScxAl1-xN/GaN Heterojunctions

Toward gallium oxide power electronics

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Narrowband Polaritonic Thermal Emitters Driven by Waste Heat

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

Quasi-Two-Dimensional h‑BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Lifetime and Molecular Coupling in Surface Phonon Polariton Resonators

A review of Ga2O3 materials, processing, and devices

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

Engineering the Spectral and Spatial Dispersion of Thermal Emission via Polariton–Phonon Strong Coupling

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Integration of polycrystalline Ga2O3 on diamond for thermal management

Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

Thermal Management of Gallium Nitride Electronics

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