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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Simulation of thermal management in AlGaN GaN HEMTs with integrated diamond heat spreaders

Semiconductor science and technology, 2013-05, Vol.28 (5), p.55010

2013

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Advanced electronic materials, 2018-01, Vol.4 (1), p.n/a

2018

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Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115013

2014

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Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Semiconductor science and technology, 2013-05, Vol.28 (5), p.55007

2013

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Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE electron device letters, 2012-11, Vol.33 (11), p.1610-1612

2012

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Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Semiconductor science and technology, 2021-01, Vol.36 (1), p.14008

2021

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Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Applied physics letters, 2013-07, Vol.103 (3)

2013

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Homoepitaxial HVPE GaN: A potential substrate for high performance devices

Journal of crystal growth, 2018-10, Vol.500, p.104-110

2018

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Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Journal of applied physics, 2009-08, Vol.106 (4)

2009

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Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

Materials Science Forum, 2016-05, Vol.858, p.233-236

2016

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Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

Semiconductor science and technology, 2015-03, Vol.30 (3), p.35015

2015

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An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

IEEE electron device letters, 2009-12, Vol.30 (12), p.1251-1253

2009

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IEEE_Xplore

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Effective Nitrogen Doping for Fabricating Highly Conductive β-SiC Ceramics

Journal of the American Ceramic Society, 2011-10, Vol.94 (10), p.3216-3219

2011

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Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

Applied physics letters, 2012-05, Vol.100 (19), p.193506-193506-4

2012

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Journal of electronic materials, 2010-05, Vol.39 (5), p.478-481

2010

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Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Acta materialia, 2017-10, Vol.139, p.215-225

2017

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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

IEEE electron device letters, 2012-01, Vol.33 (1), p.23-25

2012

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IEEE_Xplore

Thick homoepitaxial GaN with low carrier concentration for high blocking voltage

Journal of crystal growth, 2010-09, Vol.312 (18), p.2616-2619

2010

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Processing of Cavities in SiC Material for Quantum Technologies

Materials science forum, 2018-06, Vol.924, p.905-908

2018

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Reduced self-heating in ALGaN/GaN HEMTs using nanocrystalline diamond heat spreading films

68th Device Research Conference, 2010, p.125-126

2010

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IEEE_Xplore

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Materials science forum, 2014-02, Vol.778-780, p.324-327

2014

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Recombination-induced stacking fault degradation of 4 H -SiC merged- P i N -Schottky diodes

Journal of applied physics, 2009-08, Vol.106 (4), p.044504-044504-6

2009

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Advanced electronic materials, 2017-12, Vol.4 (1)

2017

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Simulation of thermal management in AlGaN GaN HEMTs with integrated diamond heat spreaders

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Homoepitaxial HVPE GaN: A potential substrate for high performance devices

Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

Effective Nitrogen Doping for Fabricating Highly Conductive β-SiC Ceramics

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

Thick homoepitaxial GaN with low carrier concentration for high blocking voltage

Processing of Cavities in SiC Material for Quantum Technologies

Reduced self-heating in ALGaN/GaN HEMTs using nanocrystalline diamond heat spreading films

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Recombination-induced stacking fault degradation of 4 H -SiC merged- P i N -Schottky diodes

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

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