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Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Journal of crystal growth, 2012-11, Vol.358, p.1-4

2012

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Characterization of high electron mobility transistor fabricated on hydride vapor phase epitaxy‐grown GaN templates containing various Fe concentrations

Physica status solidi. C, 2017-08, Vol.14 (8), p.n/a

2017

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Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

AIP advances, 2017-06, Vol.7 (6), p.065111-065111-9

2017

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Generation of dislocation clusters by glide m-planes in semipolar GaN layers

Physica status solidi. A, Applications and materials science, 2014-04, Vol.211 (4), p.736-739

2014

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Characterization of {11−22} GaN grown using two-step growth technique on shallowly etched r-plane patterned sapphire substrates

Journal of crystal growth, 2014-04, Vol.391, p.41-45

2014

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Dislocation revelation and categorization for thick free-standing GaN substrates grown by HVPE

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Growth of semipolar {11$ bar 2 $2} GaN using SiNx intermediate layer by hydride vapor phase epitaxy

Physica status solidi. C, 2014-04, Vol.11 (3-4), p.557-560

2014

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Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE

Journal of crystal growth, 2007, Vol.298, p.232-234

2007

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Analysis of deep levels in n -type GaN by transient capacitance methods

Journal of applied physics, 1994-07, Vol.76 (1), p.304-309

1994

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Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO

Journal of applied physics, 2017-04, Vol.121 (15)

2017

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Highly sensitive optical probe for uniaxial strain in GaN epitaxial films

Physica Status Solidi (b), 2008-05, Vol.245 (5), p.878-880

2008

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Fabrication of GaN-based light emitting diodes using direct heteroepitaxial lateral overgrowth on patterned sapphire substrates with thick SiO2 masks

Physica status solidi. C, 2008-07, Vol.5 (9), p.3060-3062

2008

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Effects of sapphire substrate misorientation on the GaN-based light emitting diode grown by metalorganic vapour phase epitaxy

Physica status solidi. C, 2008-05, Vol.5 (6), p.2007-2009

2008

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Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Applied physics letters, 2003-12, Vol.83 (24), p.4906-4908

2003

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High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2001-06, Vol.40 (6B), p.L583-L585

2001

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Spatial properties of excitonexciton interactions in GaN observed by four-wave-mixing spectroscopy

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S684-S686

2009

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Four-wave-mixing study of exciton fine structure in GaN

Physica status solidi. C, 2009-01, Vol.6 (1), p.42-45

2009

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Preliminary Experience with a Gastrointestinal Endoscope Using a White Light-Emitting Diode

Endoscopy, 2006-03, Vol.38 (3), p.290-291

2006

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High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.121-125

2001

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Time-resolved four-wave mixing studies of excitons in GaN

Physica status solidi. C, 2007-06, Vol.4 (7), p.2752-2755

2007

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Growth of semipolar {11 $ \bar 2 $ 2} GaN using SiN sub(x) intermediate layer by hydride vapor phase epitaxy

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.557-560

2014

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Growth of semipolar {11$ \bar 2 $2} GaN using SiN x intermediate layer by hydride vapor phase epitaxy

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.557-560

2014

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High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.151-154

2003

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Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.337-340

2001

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Growth of semipolar GaN substrates by hydride vapor phase epitaxy on patterned sapphire substrate

2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015, Vol.4, p.1-2

2015

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Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Characterization of high electron mobility transistor fabricated on hydride vapor phase epitaxy‐grown GaN templates containing various Fe concentrations

Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

Generation of dislocation clusters by glide m-planes in semipolar GaN layers

Characterization of {11−22} GaN grown using two-step growth technique on shallowly etched r-plane patterned sapphire substrates

Dislocation revelation and categorization for thick free-standing GaN substrates grown by HVPE

Growth of semipolar {11$ bar 2 $2} GaN using SiNx intermediate layer by hydride vapor phase epitaxy

Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE

Analysis of deep levels in n -type GaN by transient capacitance methods

Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO

Highly sensitive optical probe for uniaxial strain in GaN epitaxial films

Fabrication of GaN-based light emitting diodes using direct heteroepitaxial lateral overgrowth on patterned sapphire substrates with thick SiO2 masks

Effects of sapphire substrate misorientation on the GaN-based light emitting diode grown by metalorganic vapour phase epitaxy

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Spatial properties of excitonexciton interactions in GaN observed by four-wave-mixing spectroscopy

Four-wave-mixing study of exciton fine structure in GaN

Preliminary Experience with a Gastrointestinal Endoscope Using a White Light-Emitting Diode

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Time-resolved four-wave mixing studies of excitons in GaN

Growth of semipolar {11 $ \bar 2 $ 2} GaN using SiN sub(x) intermediate layer by hydride vapor phase epitaxy

Growth of semipolar {11$ \bar 2 $2} GaN using SiN x intermediate layer by hydride vapor phase epitaxy

High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Growth of semipolar GaN substrates by hydride vapor phase epitaxy on patterned sapphire substrate

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