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InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3), p.032204-032204-6

2011

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Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DG04-04DG04-4

2010

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Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)

Japanese Journal of Applied Physics, 2004-12, Vol.43 (No. 12A), p.L1540-L1542

2004

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ELECTRON CYCLOTRON RESONANCE-REACTIVE ION BEAM ETCHING OF InP BY CYCLIC INJECTION OF CH4/H2/Ar AND O2

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 15-19. 2002, 2002-01, Vol.41 (1), p.15-19

2002

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Report on the Start of the Institute of Pure and Applied Physics

Butsuri, 2000/09/05, Vol.55(9), pp.661

Tada, Kunio

2000

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Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change

Japanese Journal of Applied Physics, 2001, Vol.40 (2R), p.656-661

2001

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In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

Thin solid films, 1998-02, Vol.313 (1-2), p.604-608

1998

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Anomalous Sharp Dip of Large Field-Induced Refractive Index Change in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2000, Vol.39 (11R), p.6329-6333

2000

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Low-Voltage Mach--Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.042203-042203-6

2012

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Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition

Applied physics letters, 1996-02, Vol.68 (6), p.832-834

1996

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A study on electroabsorption effects in coupled quantum wells

Japanese Journal of Applied Physics, 1993, Vol.32 (1B), p.536-539

1993

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Utilization of non-pseudomorphic growth to realize tensile strain on GaAs substrates

Japanese Journal of Applied Physics, 1993-11, Vol.32 (11A), p.L1596-L1598

1993

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Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition

Japanese journal of applied physics, 1996, Vol.35 (2B), p.1468-1473

1996

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Design and analysis of the X-waveguide optical switch in a MESFET geometry

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (9A), p.2748-2752

1992

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Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4B), p.2701-2706

2002

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Fabrication of multiple-electrode chirped-grating-tunable distributed-feedback lasers

Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.856-858

1994

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Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum Well

Japanese Journal of Applied Physics, 1989-11, Vol.28 (11A), p.L1982

1989

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Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data

Japanese Journal of Applied Physics, 2000, Vol.39 (4R), p.1642-1649

2000

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Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4R), p.42203

2012

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Anomalous refractive index change and recovery of electro-optic coefficient r33 in proton-exchanged LiTaO3 optical waveguides after annealing

Journal of applied physics, 1992-04, Vol.71 (8), p.3966-3974

1992

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Wavelength filtering operation in absorptive-grating gain-coupled distributed-feedback MQW lasers

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.1249-1252

1995

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Strong Exciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al 0.3 Ga 0.7 As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential

Japanese Journal of Applied Physics, 1997-07, Vol.36 (7A), p.L855

1997

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Quantum-confined stark effect in a parabolic-potential quantum well

Japanese Journal of Applied Physics, 1990-08, Vol.29 (8), p.1466-1473

1990

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DECREASE IN DEPOSITION RATE AND IMPROVEMENT OF STEP COVERAGE BY CF4 ADDITION TO PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE FILMS

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 1, pp. 330-336. 2000, 2000-01, Vol.39 (1), p.330-336

2000

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InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change

Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well

Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)

ELECTRON CYCLOTRON RESONANCE-REACTIVE ION BEAM ETCHING OF InP BY CYCLIC INJECTION OF CH4/H2/Ar AND O2

Report on the Start of the Institute of Pure and Applied Physics

Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change

In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

Anomalous Sharp Dip of Large Field-Induced Refractive Index Change in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well

Low-Voltage Mach--Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition

A study on electroabsorption effects in coupled quantum wells

Utilization of non-pseudomorphic growth to realize tensile strain on GaAs substrates

Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition

Design and analysis of the X-waveguide optical switch in a MESFET geometry

Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Fabrication of multiple-electrode chirped-grating-tunable distributed-feedback lasers

Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum Well

Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data

Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Anomalous refractive index change and recovery of electro-optic coefficient r33 in proton-exchanged LiTaO3 optical waveguides after annealing

Wavelength filtering operation in absorptive-grating gain-coupled distributed-feedback MQW lasers

Strong Exciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al 0.3 Ga 0.7 As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential

Quantum-confined stark effect in a parabolic-potential quantum well

DECREASE IN DEPOSITION RATE AND IMPROVEMENT OF STEP COVERAGE BY CF4 ADDITION TO PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE FILMS

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