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Spinal anesthesia reduces postoperative delirium in opium dependent patients undergoing coronary artery bypass grafting

Acta anaesthesiologica belgica, 2015, Vol.66 (2), p.49

2015

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Investigation of EEG changes during exposure to extremely low-frequency magnetic field to conduct brain signals

Neurological sciences, 2014-11, Vol.35 (11), p.1715-1721

2014

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Study of the frequency parameters of EEG influenced by zone-dependent local ELF-MF exposure on the human head

Electromagnetic biology and medicine, 2012-06, Vol.31 (2), p.112-121

2012

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Evolution of T-shaped gate lithography for compound semiconductors field-effect transistors

IEEE transactions on semiconductor manufacturing, 2003-08, Vol.16 (3), p.365-369

2003

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FADE MARGINS PREDICTION FOR BROADBAND FIXED WIRELESS ACCESS (BFWA) FROM MEASUREMENTS IN TROPICS

Progress in electromagnetics research C Pier C, 2009, Vol.11, p.199-212

2009

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Independent Component Analysis as an Effective Tool for Automated Diagnosis of Melanoma

2008 Cairo International Biomedical Engineering Conference, 2008, p.1-4

2008

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Gate delays of InGaAs/InP heterojunction integrated injection logic

IEEE electron device letters, 1982-08, Vol.3 (8), p.200-202

1982

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Demonstration of photonically controlled GaAs digital/MMIC for RF optical links

IEEE transactions on microwave theory and techniques, 1997-01, Vol.45 (1), p.15-22

1997

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Triple implant (In,Ga)As/InP n-p-n heterojunction bipolar transistors for integrated circuit applications

IEEE electron device letters, 1984-07, Vol.5 (7), p.251-253

1984

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Channeling, exponential tails, and analytical modeling of Si implants into GaAs

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.96-106

1990

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Long-term rain attenuation probability and site diversity gain prediction

2007 Asia-Pacific Conference on Applied Electromagnetics, 2007, p.1-5

2007

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Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp

Applied physics letters, 1983-09, Vol.43 (5), p.505-507

1983

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Co-channel interference for site diversity during heavy rain in LMDS system

2008 IEEE International RF and Microwave Conference, 2008, p.70-74

2008

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Performance comparison of heterojunction phototransistors, p-i-n FET's, and APD-FET's for optical fiber communication systems

IEEE journal of quantum electronics, 1981-12, Vol.17 (12), p.2259-2261

1981

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Very low resistance ohmic contacts on p -type InP by direct plating

Applied physics letters, 1982-01, Vol.40 (5), p.398-400

1982

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VA-5 InGaAs/InP heterojunction bipolar transistors for digital integrated circuits

IEEE transactions on electron devices, 1984-12, Vol.31 (12), p.1980-1980

1984

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Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp

Applied physics letters, 1983-08, Vol.43 (4), p.381-383

1983

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Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp

Applied physics letters, 1983-10, Vol.43 (7), p.647-649

1983

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IVA-6 ultra high intensity argon arc lamp annealing of ion implanted GaAs devices

IEEE transactions on electron devices, 1983-11, Vol.30 (11), p.1589-1590

1983

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Ion-implanted In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As lateral PNP transistors

IEEE electron device letters, 1982-12, Vol.3 (12), p.379-381

1982

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Ion implantation of Si and Be in Al0.48In0.52As

Journal of applied physics, 1983-01, Vol.54 (8), p.4374-4377

1983

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LPE Growth Techniques for Fabricating Abrupt Zinc‐ and Magnesium‐Doped p+‐n InGaAsP / InP Heterojunctions

Journal of the Electrochemical Society, 1982-09, Vol.129 (9), p.2085-2088

1982

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Demonstration of photonically-controlled GaAs digital/MMIC for rf optical links

Proceedings of 1995 IEEE MTT-S International Microwave Symposium, 1995, p.1283-1285 vol.3

1995

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Ion implantation of Si and Be in Al(0.48)In(0.52)As

Journal of applied physics, 1983-08, Vol.54, p.4374-4377. 14

1983

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Ion-implanted In0.53Ga0.47As/In0.52Al0.48As lateral PNP transistors

IEEE electron device letters, 1982-12, Vol.3 (12), p.379-381

1982

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Spinal anesthesia reduces postoperative delirium in opium dependent patients undergoing coronary artery bypass grafting

Investigation of EEG changes during exposure to extremely low-frequency magnetic field to conduct brain signals

Study of the frequency parameters of EEG influenced by zone-dependent local ELF-MF exposure on the human head

Evolution of T-shaped gate lithography for compound semiconductors field-effect transistors

FADE MARGINS PREDICTION FOR BROADBAND FIXED WIRELESS ACCESS (BFWA) FROM MEASUREMENTS IN TROPICS

Independent Component Analysis as an Effective Tool for Automated Diagnosis of Melanoma

Gate delays of InGaAs/InP heterojunction integrated injection logic

Demonstration of photonically controlled GaAs digital/MMIC for RF optical links

Triple implant (In,Ga)As/InP n-p-n heterojunction bipolar transistors for integrated circuit applications

Channeling, exponential tails, and analytical modeling of Si implants into GaAs

Long-term rain attenuation probability and site diversity gain prediction

Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp

Co-channel interference for site diversity during heavy rain in LMDS system

Performance comparison of heterojunction phototransistors, p-i-n FET's, and APD-FET's for optical fiber communication systems

Very low resistance ohmic contacts on p -type InP by direct plating

VA-5 InGaAs/InP heterojunction bipolar transistors for digital integrated circuits

Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp

Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp

IVA-6 ultra high intensity argon arc lamp annealing of ion implanted GaAs devices

Ion-implanted In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As lateral PNP transistors

Ion implantation of Si and Be in Al0.48In0.52As

LPE Growth Techniques for Fabricating Abrupt Zinc‐ and Magnesium‐Doped p+‐n InGaAsP / InP Heterojunctions

Demonstration of photonically-controlled GaAs digital/MMIC for rf optical links

Ion implantation of Si and Be in Al(0.48)In(0.52)As

Ion-implanted In0.53Ga0.47As/In0.52Al0.48As lateral PNP transistors

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