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Reduction of Grown-In Defects by High Temperature Annealing

Journal of the Electrochemical Society, 2000, Vol.147 (1), p.350

2000

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Present Status and Prospect of Si Wafers for Ultra Large Scale Integration

Japanese Journal of Applied Physics, 2004-07, Vol.43 (7R), p.4055

Tsuya, Hideki

2004

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Effect of Heavy Boron Doping on Oxide Precipitate Growth in Czochralski Silicon

Journal of the Electrochemical Society, 1999-06, Vol.146 (6), p.2239-2244

1999

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Analysis of capacitor breakdown mechanisms due to crystal-originated pits

IEEE electron device letters, 1999-10, Vol.20 (10), p.504-506

1999

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Myocardial infarction

Nihon rinshō, 2001-12, Vol.59 Suppl 8, p.709

2001

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Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

Journal of the Electrochemical Society, 1999-09, Vol.146 (9), p.3461-3465

1999

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Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric film

Applied physics letters, 1993-08, Vol.63 (9), p.1246-1248, Article 1246

1993

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Measurement of the electronic transfer process in nitride film on a silicon substrate via photoconductance decay

Journal of applied physics, 1993-12, Vol.74 (12), p.7311-7314

1993

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Investigation of the Effect of Thermal History on Ring-OSF Formation in CZ-Silicon Crystals

MRS proceedings, 1998-01, Vol.510, Article 21

1998

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Gettering in Advanced Low Temperature Processes

Solid state phenomena, 1997-01, Vol.57-58, p.53-62

1997

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Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

Applied physics letters, 1999-06, Vol.74 (24), p.3648-3650

1999

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Raman scattering in-depth evaluation of recrystallized silicon-on-oxide using different wavelength excitation

Journal of electronic materials, 1988, Vol.17 (1), p.33-37, Article 33

1988

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Influence of crystal-originated particle microstructure on silicon wafers on gate oxide integrity

Japanese Journal of Applied Physics, 1997-10, Vol.36 (10), p.6187-6194

1997

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A case of renal pelvic cancer with recurrence of liver metastasis showing partial response by injection of methotrexate and intraarterial infusion of cisplatin and pirarubicin

Gan to kagaku ryoho, 1998-06, Vol.25 (7), p.1079

1998

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Formation of grown-in defects during Czochralski silicon crystal growth

Japanese Journal of Applied Physics, 1997-11, Vol.36 (11), p.6595-6600

1997

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Novel device isolation technology with selective epitaxial growth

IEEE transactions on electron devices, 1984-09, Vol.31 (9), p.1283-1288

1984

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Gettering of Cu and Ni Impurities in SIMOX Wafers

Journal of the Electrochemical Society, 1995-06, Vol.142 (6), p.2059-2066

1995

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Relationship between grown-in defects in Czochralski silicon crystals

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5B), p.L591-L594

1997

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Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers

Physica status solidi. A, Applied research, 1983-09, Vol.79 (1), p.199-206

1983

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Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czochralski Silicon Crystals

Japanese Journal of Applied Physics, 1999-10, Vol.38 (10R), p.5725

1999

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Characteristics of MOSFET prepared on Si/MgO.Al2O3/SiO2/Si structure

IEEE transactions on electron devices, 1985-02, Vol.32 (2), p.253-257

1985

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Atomic Force Microscope Observation of the Change in Shape and Subsequent Disappearance of “Crystal-Originated Particles” after Hydrogen-Atmosphere Thermal Annealing

Japanese Journal of Applied Physics, 1998-01, Vol.37 (1R), p.1

1998

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Proximity Effect of Superconducting Superimposed Films

Journal of the Physical Society of Japan, 1967-01, Vol.23 (5), p.975-982

Tsuya, Hideki

1967

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Tunneling in Superconducting Binary Films

Journal of the Physical Society of Japan, 1966-01, Vol.21 (5), p.1011-1011

Tsuya, Hideki

1966

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Superconducting Properties of Fe-Sn Superimposed Films

Journal of the Physical Society of Japan, 1965-01, Vol.20 (9), p.1734-1735

Tsuya, Hideki

1965

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Reduction of Grown-In Defects by High Temperature Annealing

Present Status and Prospect of Si Wafers for Ultra Large Scale Integration

Effect of Heavy Boron Doping on Oxide Precipitate Growth in Czochralski Silicon

Analysis of capacitor breakdown mechanisms due to crystal-originated pits

Myocardial infarction

Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric film

Measurement of the electronic transfer process in nitride film on a silicon substrate via photoconductance decay

Investigation of the Effect of Thermal History on Ring-OSF Formation in CZ-Silicon Crystals

Gettering in Advanced Low Temperature Processes

Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

Raman scattering in-depth evaluation of recrystallized silicon-on-oxide using different wavelength excitation

Influence of crystal-originated particle microstructure on silicon wafers on gate oxide integrity

A case of renal pelvic cancer with recurrence of liver metastasis showing partial response by injection of methotrexate and intraarterial infusion of cisplatin and pirarubicin

Formation of grown-in defects during Czochralski silicon crystal growth

Novel device isolation technology with selective epitaxial growth

Gettering of Cu and Ni Impurities in SIMOX Wafers

Relationship between grown-in defects in Czochralski silicon crystals

Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers

Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czochralski Silicon Crystals

Characteristics of MOSFET prepared on Si/MgO.Al2O3/SiO2/Si structure

Atomic Force Microscope Observation of the Change in Shape and Subsequent Disappearance of “Crystal-Originated Particles” after Hydrogen-Atmosphere Thermal Annealing

Proximity Effect of Superconducting Superimposed Films

Tunneling in Superconducting Binary Films

Superconducting Properties of Fe-Sn Superimposed Films

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