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A spatial autoregressive stochastic frontier model for panel data incorporating a model of technical inefficiency

Japan and the world economy, 2019-06, Vol.50, p.66-77

Tsukamoto, Takahiro

2019

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Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy

Applied physics letters, 2024-02, Vol.124 (9)

2024

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Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy

Thin solid films, 2021-05, Vol.726, p.138646, Article 138646

2021

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Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method

Journal of crystal growth, 2023-02, Vol.604, p.127045, Article 127045

2023

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Direct Growth of Patterned Ge on Insulators Using Graphene

Journal of physical chemistry. C, 2021-07, Vol.125 (25), p.14117-14121

2021

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Simple annealing process for producing unique one-dimensional fullerene crystal named fullerene finned-micropillar

Scientific reports, 2020-11, Vol.10 (1), Article 19270

2020

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Crystallinity control of SiC grown on Si by sputtering method

Journal of crystal growth, 2017-04, Vol.463, p.67-71

2017

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Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

Journal of materials science, 2015-06, Vol.50 (12), p.4366-4370

2015

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Control of Graphene Etching by Atomic Structures of the Supporting Substrate Surfaces

Journal of physical chemistry. C, 2011-05, Vol.115 (17), p.8580-8585

2011

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Graphene etching controlled by atomic structures on the substrate surface

Carbon (New York), 2012-02, Vol.50 (2), p.674-679

2012

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Effects of Surface Chemistry of Substrates on Raman Spectra in Graphene

Journal of physical chemistry. C, 2012-02, Vol.116 (7), p.4732-4737

2012

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Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth

Electronic materials letters, 2020-01, Vol.16 (1), p.9-13

2020

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Plasma Interleukin-6 and Tumor Necrosis Factor-α Can Predict Coronary Endothelial Dysfunction in Hypertensive Patients

Hypertension research, 2007-06, Vol.30 (6), p.541-548

2007

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Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method

Thin solid films, 2015-10, Vol.592, p.34-38

2015

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Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

Applied physics letters, 2013-10, Vol.103 (17)

2013

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Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode

Electronic Materials Letters, 2020, 16(1), , pp.41-46

2020

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Olmesartan, But Not Amlodipine, Improves Endothelium-Dependent Coronary Dilation in Hypertensive Patients

Journal of the American College of Cardiology, 2007-09, Vol.50 (12), p.1144-1149

2007

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Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

Japanese Journal of Applied Physics, 2015-08, Vol.54 (8S1), p.8

2015

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Control of the spatial distribution of porous alumina micro-domes formed during anodic oxidation

Electrochimica acta, 2009-08, Vol.54 (20), p.4712-4717

2009

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高Crフェライト系耐熱鋼溶接継手部のクリープに伴う水素放出特性の変化

材料, 2019/02/15, Vol.68(2), pp.106-113

2019

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Increasing the critical thickness of SiGe layers on Si substrates using sputter epitaxy method

Journal of crystal growth, 2022-12, Vol.600, p.126900, Article 126900

2022

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Heterogeneous Reduction of Myocardial Oxidative Metabolism in Patients With Ischemic and Dilated Cardiomyopathy Using C-11 Acetate PET

Circulation Journal, 2008, Vol.72(5), pp.786-792

2008

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Elevated Plasma Plasminogen Activator Inhibitor Type-1 is an Independent Predictor of Coronary Microvascular Dysfunction in Hypertension

Circulation Journal, 2007, Vol.71(3), pp.348-353

2007

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Layered Structures of Interfacial Water and Their Effects on Raman Spectra in Graphene-on-Sapphire Systems

Journal of physical chemistry. C, 2012-05, Vol.116 (18), p.10084-10089

2012

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A spatial autoregressive stochastic frontier model for panel data incorporating a model of technical inefficiency

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy

Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy

Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method

Direct Growth of Patterned Ge on Insulators Using Graphene

Simple annealing process for producing unique one-dimensional fullerene crystal named fullerene finned-micropillar

Crystallinity control of SiC grown on Si by sputtering method

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

Control of Graphene Etching by Atomic Structures of the Supporting Substrate Surfaces

Graphene etching controlled by atomic structures on the substrate surface

Effects of Surface Chemistry of Substrates on Raman Spectra in Graphene

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth

Plasma Interleukin-6 and Tumor Necrosis Factor-α Can Predict Coronary Endothelial Dysfunction in Hypertensive Patients

Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode

Olmesartan, But Not Amlodipine, Improves Endothelium-Dependent Coronary Dilation in Hypertensive Patients

Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

Control of the spatial distribution of porous alumina micro-domes formed during anodic oxidation

高Crフェライト系耐熱鋼溶接継手部のクリープに伴う水素放出特性の変化

Increasing the critical thickness of SiGe layers on Si substrates using sputter epitaxy method

Heterogeneous Reduction of Myocardial Oxidative Metabolism in Patients With Ischemic and Dilated Cardiomyopathy Using C-11 Acetate PET

Elevated Plasma Plasminogen Activator Inhibitor Type-1 is an Independent Predictor of Coronary Microvascular Dysfunction in Hypertension

Layered Structures of Interfacial Water and Their Effects on Raman Spectra in Graphene-on-Sapphire Systems

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