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Room temperature carrier recombination in InGaAs/GaAs quantum wells

Journal of applied physics, 1993-09, Vol.74 (5), p.3587-3589

1993

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Near band-gap photoluminescence of the MOCVD-grown heavily Si-doped GaAs

Semiconductor science and technology, 1989-11, Vol.4 (11), p.938-942

1989

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Photoluminescence study of acceptors in silicon-doped gallium arsenide grown by metalorganic chemical vapor deposition

Journal of crystal growth, 1989-08, Vol.96 (4), p.790-794

1989

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Stark shift of the interband transitions in asymmetric step InGaAs/GaAs quantum wells

Journal of applied physics, 1993-05, Vol.73 (9), p.4691-4693

1993

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Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour deposition

Semiconductor science and technology, 1992-06, Vol.7 (6), p.845-849

1992

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Ultrafast photoconductors from low-temperature MOCVD-grown GaAs and InGaAs epitaxial layers

Applied Physics A Solids and Surfaces, 1994-02, Vol.58 (2), p.177-181

1994

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Electro-optical measurement of high-field conductivity in δ-doped GaAs epitaxial layers

Electronics letters, 1991, Vol.27 (1), p.2-3

1991

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Determination of In composition in molecular beam epitaxy grown InxGa1-xAs/GaAs heterostructures

Journal of crystal growth, 1993-02, Vol.127 (1-4), p.616-618

1993

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Electroreflectance studies of InGaAs/GaAs asymmetric step quantum wells

Semiconductor science and technology, 1993-10, Vol.8 (10), p.1875-1880

1993

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XPS study of the InxGa1−xAsGaAs superlattice

Journal of electron spectroscopy and related phenomena, 1994-12, Vol.70 (2), p.145-149

1994

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Characterization study of strained In x Ga1− x As/GaAs superlattices

Journal of applied physics, 1994-11, Vol.76 (10), p.5738-5743

1994

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Determination of In composition in molecular beam epitaxy grown In sub(x)Ga sub(1-x)As/GaAs heterostructures

Journal of crystal growth, 1993-01, Vol.127 (1-4), p.616-618

1993

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Determination of In composition in molecular beam epitaxy grown In xGa 1-xAs/GaAs heterostructures

Journal of crystal growth, 1993, Vol.127 (1), p.616-618

1993

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XPS study of the [formula omitted] superlattice

Journal of electron spectroscopy and related phenomena, 1994, Vol.70 (2), p.145-149

1994

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InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Superlattices and microstructures, 1992, Vol.12 (3), p.341-345

1992

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Growth of analog Al(x)Ga(1-x)As/GaAs parabolic quantum wells by molecular beam epitaxy

Applied physics letters, 1993-01, Vol.62 (1), p.61

1993

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Growth of analog Al x Ga1− x As/GaAs parabolic quantum wells by molecular beam epitaxy

Applied physics letters, 1993-01, Vol.62 (1), p.61-62

1993

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Growth of analog AIxGa1-xAs/GaAs parabolic quantum wells by molecular beam epitaxy

Applied physics letters, 1993, Vol.62 (1), p.61-62

1993

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[formula omitted] quantum well structures grown by molecular beam epitaxy

Superlattices and microstructures, 1992, Vol.12 (3), p.341-345

1992

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Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS 2 nanolayers on crystalline silicon

Nanotechnology, 2020-10, Vol.31 (42), p.425603

2020

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Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS2 nanolayers on crystalline silicon

Nanotechnology, 2020-10, Vol.31 (42), p.425603-425603

2020

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Long distance distortions in the graphene near the edge of planar metal contacts

Thin solid films, 2020-03, Vol.698, p.137850, Article 137850

2020

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Long-time drift induced changes in electrical characteristics of graphene–metal contacts

Lithuanian journal of physics, 2020-01, Vol.60 (4)

2020

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Electrochemical Formation and Microstructure of Porous Gallium Phosphide

Acta physica Polonica, A, 2011-02, Vol.119 (2), p.131-134

2011

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Infrared reflectance of GaP nanorods

Lithuanian journal of physics, 2011, Vol.51 (4), p.341-344

2011

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Room temperature carrier recombination in InGaAs/GaAs quantum wells

Near band-gap photoluminescence of the MOCVD-grown heavily Si-doped GaAs

Photoluminescence study of acceptors in silicon-doped gallium arsenide grown by metalorganic chemical vapor deposition

Stark shift of the interband transitions in asymmetric step InGaAs/GaAs quantum wells

Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour deposition

Ultrafast photoconductors from low-temperature MOCVD-grown GaAs and InGaAs epitaxial layers

Electro-optical measurement of high-field conductivity in δ-doped GaAs epitaxial layers

Determination of In composition in molecular beam epitaxy grown InxGa1-xAs/GaAs heterostructures

Electroreflectance studies of InGaAs/GaAs asymmetric step quantum wells

XPS study of the InxGa1−xAsGaAs superlattice

Characterization study of strained In x Ga1− x As/GaAs superlattices

Determination of In composition in molecular beam epitaxy grown In sub(x)Ga sub(1-x)As/GaAs heterostructures

Determination of In composition in molecular beam epitaxy grown In xGa 1-xAs/GaAs heterostructures

XPS study of the [formula omitted] superlattice

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Growth of analog Al(x)Ga(1-x)As/GaAs parabolic quantum wells by molecular beam epitaxy

Growth of analog Al x Ga1− x As/GaAs parabolic quantum wells by molecular beam epitaxy

Growth of analog AIxGa1-xAs/GaAs parabolic quantum wells by molecular beam epitaxy

[formula omitted] quantum well structures grown by molecular beam epitaxy

Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS 2 nanolayers on crystalline silicon

Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS2 nanolayers on crystalline silicon

Long distance distortions in the graphene near the edge of planar metal contacts

Long-time drift induced changes in electrical characteristics of graphene–metal contacts

Electrochemical Formation and Microstructure of Porous Gallium Phosphide

Infrared reflectance of GaP nanorods

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