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Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

Journal of electronic materials, 1998-04, Vol.27 (4), p.292-295

1998

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Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

Applied surface science, 2001-12, Vol.184 (1), p.419-424

2001

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Highly doped p-type 3C–SiC on 6H–SiC substrates

Semiconductor science and technology, 2008-07, Vol.23 (7), p.075004

2008

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Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.321-324

2002

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Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures

Materials science forum, 2010-01, Vol.645-648, p.259-262

2010

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P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Materials science forum, 2009, Vol.615-617, p.177-180

2009

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Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

Materials science forum, 2007-01, Vol.556-557, p.175-178

2007

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Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

Materials science forum, 2003-09, Vol.433-436, p.427-430

2003

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Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Materials science forum, 2003-09, Vol.433-436, p.293-296

2003

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Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-08, Vol.77 (1), p.50-54

2000

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When the Future Came: The Collapse of the USSR and the Emergence of National Memory in Post-Soviet History Textbooks

2019

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New results in sublimation growth of the SiC epilayers

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.165-167

1999

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Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations

Materials science forum, 2013-01, Vol.740-742, p.267-270

2013

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Role of the defects under porous silicon carbide formation

Applied surface science, 2001-12, Vol.184 (1), p.252-256

2001

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Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

Materials science forum, 2000-05, Vol.338-342, p.221-224, Article 221

2000

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Metal-insulator transition in n-3C-SiC epitaxial films

Journal of applied physics, 2009-01, Vol.105 (2)

2009

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Heteropolytype structures with SiC quantum dots

Technical physics letters, 2005-01, Vol.31 (12), p.997-1000

2005

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Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

Technical physics letters, 2001-12, Vol.27 (12), p.1052-1054

2001

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Investigation of the p −-3C-SiC/n +-6H-SiC heterostructures with modulated doping

Technical physics letters, 2002-12, Vol.28 (12), p.1011-1014

2002

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On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Materials science forum, 2011, Vol.679-680, p.12-15

2011

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3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

Semiconductors (Woodbury, N.Y.), 2003-04, Vol.37 (4), p.482-484

2003

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Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy

Semiconductors (Woodbury, N.Y.), 2002-07, Vol.36 (7), p.758-762

2002

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Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation

Materials science forum, 2000-05, Vol.338-342, p.509-512, Article 509

2000

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Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Materials science forum, 2000-05, Vol.338-342, p.497-500

2000

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Metal-insulator transition in n - 3 C -SiC epitaxial films

Journal of applied physics, 2009-01, Vol.105 (2), p.023706-023706-5

2009

Volltextzugriff (PDF)

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Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

Highly doped p-type 3C–SiC on 6H–SiC substrates

Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

When the Future Came: The Collapse of the USSR and the Emergence of National Memory in Post-Soviet History Textbooks

New results in sublimation growth of the SiC epilayers

Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations

Role of the defects under porous silicon carbide formation

Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

Metal-insulator transition in n-3C-SiC epitaxial films

Heteropolytype structures with SiC quantum dots

Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

Investigation of the p −-3C-SiC/n +-6H-SiC heterostructures with modulated doping

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy

Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Metal-insulator transition in n - 3 C -SiC epitaxial films

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