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Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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Tri-carbon defects in carbon doped GaN

Applied physics letters, 2018-12, Vol.113 (26)

2018

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Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

New journal of physics, 2010-08, Vol.12 (8), p.085007

2010

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Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

Applied physics letters, 2017-06, Vol.110 (26)

2017

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Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Journal of crystal growth, 2016-12, Vol.456, p.97-100

2016

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Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

Applied physics letters, 2023-06, Vol.122 (26)

2023

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Optimization of high power AlGaInP laser diodes at 626 nm

Optical and quantum electronics, 2024-03, Vol.56 (3), Article 419

2024

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Micro-structured lateral thermal lens for increased output power and narrowed beam divergence in kilowatt-class 9xx nm diode laser bars

Applied physics letters, 2024-06, Vol.124 (24)

2024

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Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices

Optical and quantum electronics, 2022-11, Vol.54 (11), Article 728

2022

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Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser

Optics letters, 2015-05, Vol.40 (9), p.2127-2129

2015

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Combination of Low-Index Quantum Barrier and Super Large Optical Cavity Designs for Ultranarrow Vertical Far-Fields From High-Power Broad-Area Lasers

IEEE journal of selected topics in quantum electronics, 2011-11, Vol.17 (6), p.1715-1722

2011

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Watt-level second-harmonic generation at 589 nm with a PPMgO:LN ridge waveguide crystal pumped by a DBR tapered diode laser

Optics letters, 2016-04, Vol.41 (7), p.1530-1533

2016

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Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35019

2019

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Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers

Electronics letters, 2018-05, Vol.54 (10), p.640-641

2018

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Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm

Applied physics. B, Lasers and optics, 2017-04, Vol.123 (4), p.1-11, Article 109

2017

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Si Doping of GaN in Hydride Vapor-Phase Epitaxy

Journal of electronic materials, 2013-05, Vol.42 (5), p.820-825

2013

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High peak power pulses from dispersion optimised modelocked semiconductor laser

Electronics letters, 2013-06, Vol.49 (13), p.838-839

2013

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Effect of the AIN nucleation layer growth on AlN material quality

Journal of crystal growth, 2008-11, Vol.310 (23), p.4932-4934

2008

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Growth of GaN boules via vertical HVPE

Journal of crystal growth, 2012-07, Vol.350 (1), p.89-92

2012

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Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs

IEEE transactions on semiconductor manufacturing, 2018-11, Vol.31 (4), p.419-425

2018

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Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

Applied physics letters, 2008-05, Vol.92 (19), p.191912-191912-3

2008

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Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes

Journal of applied physics, 2013-09, Vol.114 (11)

2013

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Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Journal of crystal growth, 2011-01, Vol.315 (1), p.5-9

2011

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Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Microelectronics and reliability, 2011-02, Vol.51 (2), p.217-223

2011

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Efficiency-optimized monolithic frequency stabilization of high-power diode lasers

Journal of physics. D, Applied physics, 2013-01, Vol.46 (1), p.13001-1-20

2013

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Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Tri-carbon defects in carbon doped GaN

Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

Optimization of high power AlGaInP laser diodes at 626 nm

Micro-structured lateral thermal lens for increased output power and narrowed beam divergence in kilowatt-class 9xx nm diode laser bars

Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices

Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser

Combination of Low-Index Quantum Barrier and Super Large Optical Cavity Designs for Ultranarrow Vertical Far-Fields From High-Power Broad-Area Lasers

Watt-level second-harmonic generation at 589 nm with a PPMgO:LN ridge waveguide crystal pumped by a DBR tapered diode laser

Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers

Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers

Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm

Si Doping of GaN in Hydride Vapor-Phase Epitaxy

High peak power pulses from dispersion optimised modelocked semiconductor laser

Effect of the AIN nucleation layer growth on AlN material quality

Growth of GaN boules via vertical HVPE

Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs

Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes

Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Efficiency-optimized monolithic frequency stabilization of high-power diode lasers

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