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Methods of avoiding edge effects on semiconductor diodes

Journal of physics. D, Applied physics, 1982-04, Vol.15 (4), p.517-536

Tove, P A

1982

Volltextzugriff (PDF)

The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p -type silicon

Applied physics letters, 1981-06, Vol.38 (11), p.865-866

1981

Volltextzugriff (PDF)

A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts

Solid-state electronics, 1989, Vol.32 (11), p.961-964

1989

Volltextzugriff (PDF)

Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodes

Solid-state electronics, 1985-01, Vol.28 (7), p.721-727

1985

Volltextzugriff (PDF)

Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle

Solid-state electronics, 1988-11, Vol.31 (11), p.1583-1585

1988

Volltextzugriff (PDF)

Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon

Solid-state electronics, 1986-08, Vol.29 (8), p.779-786

1986

Volltextzugriff (PDF)

Complementary silicon MESFET technology

Electronics letters, 1987-02, Vol.23 (5), p.205-206

1987

Volltextzugriff (PDF)

Computer modeling and comparison of different rectifier (M-S, M-S-M, p-n-n+) diodes

IEEE transactions on electron devices, 1986-04, Vol.33 (4), p.469-476

1986

Volltextzugriff (PDF)

Laser Scanning Technique for the Detection of Resistivity and Lifetime Inhomogeneities in Semiconductor Devices

Physica scripta, 1978-12, Vol.18 (6), p.357-363

1978

Volltextzugriff (PDF)

Correlation between Barrier Heights and Electron and Hole Currents from Schottky Contacts to Silicon Radiation Detectors, and the Observation of Anomalously Low Hole Currents

Physica scripta, 1978-12, Vol.18 (6), p.417-420

Tove, P A

1978

Volltextzugriff (PDF)

A p-channel MESFET on silicon using an erbium gate

Solid-state electronics, 1985-01, Vol.28 (9), p.913-915

1985

Volltextzugriff (PDF)

Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions

Solid-state electronics, 1986, Vol.29 (6), p.613-617

1986

Volltextzugriff (PDF)

Auger electron spectroscopy studies of the formation of iridium and rhodium silicides

Thin solid films, 1982-03, Vol.89 (4), p.361-366

1982

Volltextzugriff (PDF)

A self-consistent approach to Fowler plots

Solid-state electronics, 1984-01, Vol.27 (11), p.1029-1032

1984

Volltextzugriff (PDF)

Barrier height of evaporated-manganese contacts to silicon

Journal of applied physics, 1979-11, Vol.50 (11), p.7250-7253

1979

Volltextzugriff (PDF)

Contact Resistance Measurements of Platinum-Silicide and Chromium Contacts to Highly Doped n and p Silicon

Physica scripta, 1981-08, Vol.24 (2), p.405-407

1981

Volltextzugriff (PDF)

Computer calculations of the photoresponse of a diffused silicon pn-junction using the Gummel-de-Mari algorithm

Solid-state electronics, 1978-01, Vol.21 (5), p.796-798

1978

Volltextzugriff (PDF)

A Comparison Between the Diffusion Model and the Combined Diffusion-Thermionic-Emission Model for MS-Junctions by Two-Carrier Numerical Computations

Physica scripta, 1981-08, Vol.24 (2), p.456-460

1981

Volltextzugriff (PDF)

Junctions Between Amorphous and Crystalline Silicon

Physica scripta, 1981-08, Vol.24 (2), p.399-400

1981

Volltextzugriff (PDF)

Study of discontinuous Au films with respect to strain gauge applications

Thin solid films, 1973-01, Vol.17 (1), p.113-121

1973

Volltextzugriff (PDF)

Barrier Height of Fe Contacts to Si

Physica scripta, 1981-08, Vol.24 (2), p.408-409

1981

Volltextzugriff (PDF)

Variation of Pt Si-nSi Barrier Height with Fabrication Parameters, and Characterisation of the Electrical Behaviour of the Junction

Physica scripta, 1978-12, Vol.18 (6), p.410-412

1978

Volltextzugriff (PDF)

Scanning Microscope for Photoelectric Data Evaluation

Review of scientific instruments, 1961-01, Vol.32 (12), p.1343-1346

1961

Volltextzugriff (PDF)

The Importance of the Time Scale in Radiation Detection Exemplified by Comparing Conventional and Avalanche Semiconductor Detectors

Physica scripta, 1976-02, Vol.13 (2), p.83-92

1976

Volltextzugriff (PDF)

Measurement of drift velocity of electrons in silicon by exciting a diode structure with short superradiant laser pulses

IEEE transactions on electron devices, 1970-05, Vol.17 (5), p.407-412

1970

Volltextzugriff (PDF)

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Methods of avoiding edge effects on semiconductor diodes

The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p -type silicon

A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts

Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodes

Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle

Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon

Complementary silicon MESFET technology

Computer modeling and comparison of different rectifier (M-S, M-S-M, p-n-n+) diodes

Laser Scanning Technique for the Detection of Resistivity and Lifetime Inhomogeneities in Semiconductor Devices

Correlation between Barrier Heights and Electron and Hole Currents from Schottky Contacts to Silicon Radiation Detectors, and the Observation of Anomalously Low Hole Currents

A p-channel MESFET on silicon using an erbium gate

Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions

Auger electron spectroscopy studies of the formation of iridium and rhodium silicides

A self-consistent approach to Fowler plots

Barrier height of evaporated-manganese contacts to silicon

Contact Resistance Measurements of Platinum-Silicide and Chromium Contacts to Highly Doped n and p Silicon

Computer calculations of the photoresponse of a diffused silicon pn-junction using the Gummel-de-Mari algorithm

A Comparison Between the Diffusion Model and the Combined Diffusion-Thermionic-Emission Model for MS-Junctions by Two-Carrier Numerical Computations

Junctions Between Amorphous and Crystalline Silicon

Study of discontinuous Au films with respect to strain gauge applications

Barrier Height of Fe Contacts to Si

Variation of Pt Si-nSi Barrier Height with Fabrication Parameters, and Characterisation of the Electrical Behaviour of the Junction

Scanning Microscope for Photoelectric Data Evaluation

The Importance of the Time Scale in Radiation Detection Exemplified by Comparing Conventional and Avalanche Semiconductor Detectors

Measurement of drift velocity of electrons in silicon by exciting a diode structure with short superradiant laser pulses

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