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Polarization and time-resolved photoluminescence spectroscopy of excitons in MoSe2 monolayers

Applied physics letters, 2015-03, Vol.106 (11)

2015

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Exciton radiative lifetime in transition metal dichalcogenide monolayers

Physical review. B, 2016-05, Vol.93 (20), Article 205423

2016

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Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures

Physical review. X, 2017-05, Vol.7 (2)

2017

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Formation and stability of point defects in monolayer rhenium disulfide

Physical review. B, Condensed matter and materials physics, 2014-04, Vol.89 (15), Article 155433

2014

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Silicon and III-V compound nanotubes : Structural and electronic properties

Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (7), p.075420.1-075420.10, Article 075420

2005

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Tunable exciton-polaritons emerging from WS2 monolayer excitons in a photonic lattice at room temperature

Nature communications, 2021-08, Vol.12 (1), p.4933-4933, Article 4933

2021

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Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates

Applied physics letters, 2009-11, Vol.95 (22), p.222103-222103-3

2009

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Stable hole doping of graphene for low electrical resistance and high optical transparency

Nanotechnology, 2011-10, Vol.22 (42), p.425701-1-6

2011

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Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Physical review. X, 2012, Vol.2 (1), p.011002, Article 011002

2012

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Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS2, MoSe2, MoTe2, WS2, and WSe2 Crystals

Journal of physical chemistry. C, 2022-03, Vol.126 (12), p.5665-5674

2022

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Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

Journal of applied physics, 2016-06, Vol.119 (23)

2016

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The synthesis of competing phase GeSe and GeSe2 2D layered materials

RSC advances, 2020-10, Vol.10 (63), p.38227-38232

2020

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Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 Crystals

Journal of physical chemistry. C, 2022-03, Vol.126 (12), p.5665-5674

2022

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Portlandite crystal: Bulk, bilayer, and monolayer structures

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91 (24), Article 245413

2015

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Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

Scientific reports, 2016-05, Vol.6 (1), p.26663-26663, Article 26663

2016

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Graphene/GaN Schottky diodes: Stability at elevated temperatures

Applied physics letters, 2011-09, Vol.99 (10), p.102102-102102-3

2011

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The synthesis of competing phase GeSe and GeSe 2 2D layered materials

RSC advances, 2020-10, Vol.10 (63), p.38227-38232

2020

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Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

Carbon (New York), 2011-05, Vol.49 (6), p.2033-2038

2011

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Demonstration of a polariton step potential by local variation of light-matter coupling in a van-der-Waals heterostructure

Optics express, 2020-06, Vol.28 (13), p.18649-18657

2020

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Monolayered MoSe2: a candidate for room temperature polaritonics

2d materials, 2017-03, Vol.4 (1)

2017

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Current transport across the pentacene/CVD-grown graphene interface for diode applications

Journal of physics. Condensed matter, 2012-06, Vol.24 (25), p.255802-255802

2012

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Few-layer MoS2 as nitrogen protective barrier

Nanotechnology, 2017-10, Vol.28 (41), p.415706-415706

2017

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Performance improvement of organic light emitting diode with aluminum oxide buffer layer for anode modification

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Confined-state physics and signs of fermionization of moiré excitons in WSe2/MoSe2 heterobilayers

2d materials, 2023-07, Vol.10 (3)

2023

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Ab-initio electron transport calculations of carbon based string structures

Physical review letters, 2004-09, Vol.93 (13), p.136404.1-136404.4

2004

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Polarization and time-resolved photoluminescence spectroscopy of excitons in MoSe2 monolayers

Exciton radiative lifetime in transition metal dichalcogenide monolayers

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures

Formation and stability of point defects in monolayer rhenium disulfide

Silicon and III-V compound nanotubes : Structural and electronic properties

Tunable exciton-polaritons emerging from WS2 monolayer excitons in a photonic lattice at room temperature

Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates

Stable hole doping of graphene for low electrical resistance and high optical transparency

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS2, MoSe2, MoTe2, WS2, and WSe2 Crystals

Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

The synthesis of competing phase GeSe and GeSe2 2D layered materials

Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 Crystals

Portlandite crystal: Bulk, bilayer, and monolayer structures

Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

Graphene/GaN Schottky diodes: Stability at elevated temperatures

The synthesis of competing phase GeSe and GeSe 2 2D layered materials

Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

Demonstration of a polariton step potential by local variation of light-matter coupling in a van-der-Waals heterostructure

Monolayered MoSe2: a candidate for room temperature polaritonics

Current transport across the pentacene/CVD-grown graphene interface for diode applications

Few-layer MoS2 as nitrogen protective barrier

Performance improvement of organic light emitting diode with aluminum oxide buffer layer for anode modification

Confined-state physics and signs of fermionization of moiré excitons in WSe2/MoSe2 heterobilayers

Ab-initio electron transport calculations of carbon based string structures

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