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Low temperature wafer direct bonding

Journal of microelectromechanical systems, 1994-03, Vol.3 (1), p.29-35

1994

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Transfer of semiconductor and oxide films by wafer bonding and layer cutting

Journal of electronic materials, 2000-07, Vol.29 (7), p.928-932

2000

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Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs

Sensors and actuators. B, Chemical, 1996-11, Vol.37 (1-2), p.13-17

1996

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Analytical piezoelectric charge densities in GaAs MESFETs

IEEE transactions on electron devices, 1996-03, Vol.43 (3), p.509-510

1996

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A new interpretation of the orientation effect in GaAs metal semiconductor field effect transistors

Japanese Journal of Applied Physics, 1991, Vol.30 (1A), p.L11-L14

1991

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Characterization of interfaces of directly bonded silicon wafers : A comparative study of secondary ion mass spectroscopy multiple internal reflection spectroscopy, and transmission electron microscopy

Japanese Journal of Applied Physics, 1996, Vol.35 (4A), p.2102-2107

1996

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Improvement of bonded silicon-on-insulator using TCE-grown oxide as buried SiO2

Japanese journal of applied physics, 1993-06, Vol.32 (6A), p.2854-2855

1993

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Water-enhanced debonding of room-temperature bonded silicon wafers for surface protection applications

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-11, Vol.31 (11), p.3483-3488

1992

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Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2

Japanese Journal of Applied Physics, 1993-06, Vol.32 (6R), p.2854

1993

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A novel surface-site model for the oxide/aqueous electrolyte interface

Japanese Journal of Applied Physics, 1995, Vol.34 (12A), p.6372-6374

1995

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Thermomechanical stress in silicon on quartz wafer bonding and Smart Cut® process

MRS proceedings, 2001, Vol.681, Article I5.10

2001

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Wafer Bonding Involving Complex Oxides

MRS proceedings, 1999, Vol.574, Article 285

1999

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GaAs piezoelectric modulated resistors

Sensors and actuators. A, Physical, 1993, Vol.35 (3), p.247-254

1993

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Wafer Bonding and Layer Splitting for Microsystems

Advanced materials (Weinheim), 1999-12, Vol.11 (17), p.1409-1425

1999

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Covalent Silicon Bonding At Room Temperature In Ultrahigh Vacuum

MRS proceedings, 1997, Vol.483, Article 141

1997

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Biased-voltage controlled thinning for bonded silicon-on-insulator wafers

Applied physics letters, 1995-05, Vol.66 (22), p.2990-2991

1995

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Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology

IEEE electron device letters, 1991-03, Vol.12 (3), p.101-103

1991

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A new silicon micromachining method using SOI/SDB technology

Sensors and actuators. A. Physical., 1990-04, Vol.23 (1), p.961-963

1990

Volltextzugriff (PDF)

Characterization of buried interfaces by multiple internal reflection spectroscopy (MIRS)

Mikrochimica acta (1966), 1997-01, Vol.125 (1-4), p.367-373

1997

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ChemInform Abstract: Wafer Bonding and Layer Splitting for Microsystems

ChemInform, 2000-02, Vol.31 (5), p.no-no

2000

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A novel bonding technology for GaAs sensors

Sensors and actuators. A. Physical., 1990-02, Vol.21 (1), p.40-42

1990

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Elimination of kink effect in fully depleted complementary buried-channel SOI MOSFET (FD CBCMOS) based on silicon direct bonding technology

IEEE electron device letters, 1991, Vol.12 (3), p.101-103

1991

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A novel CMOS flow sensor with constant chip temperature (CCT) operation

Sensors and actuators, 1987-07, Vol.12 (1), p.9-21

1987

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Brightness temperature for 166 radio sources

Chinese journal of astronomy and astrophysics, 2009-07, Vol.9 (7), p.751-760

2009

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Effects of Lactobacillus plantarum on gut barrier function in experimental obstructive jaundice

World journal of gastroenterology : WJG, 2012-08, Vol.18 (30), p.3977-3991

2012

Volltextzugriff (PDF)

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Low temperature wafer direct bonding

Transfer of semiconductor and oxide films by wafer bonding and layer cutting

Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs

Analytical piezoelectric charge densities in GaAs MESFETs

A new interpretation of the orientation effect in GaAs metal semiconductor field effect transistors

Characterization of interfaces of directly bonded silicon wafers : A comparative study of secondary ion mass spectroscopy multiple internal reflection spectroscopy, and transmission electron microscopy

Improvement of bonded silicon-on-insulator using TCE-grown oxide as buried SiO2

Water-enhanced debonding of room-temperature bonded silicon wafers for surface protection applications

Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2

A novel surface-site model for the oxide/aqueous electrolyte interface

Thermomechanical stress in silicon on quartz wafer bonding and Smart Cut® process

Wafer Bonding Involving Complex Oxides

GaAs piezoelectric modulated resistors

Wafer Bonding and Layer Splitting for Microsystems

Covalent Silicon Bonding At Room Temperature In Ultrahigh Vacuum

Biased-voltage controlled thinning for bonded silicon-on-insulator wafers

Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology

A new silicon micromachining method using SOI/SDB technology

Characterization of buried interfaces by multiple internal reflection spectroscopy (MIRS)

ChemInform Abstract: Wafer Bonding and Layer Splitting for Microsystems

A novel bonding technology for GaAs sensors

Elimination of kink effect in fully depleted complementary buried-channel SOI MOSFET (FD CBCMOS) based on silicon direct bonding technology

A novel CMOS flow sensor with constant chip temperature (CCT) operation

Brightness temperature for 166 radio sources

Effects of Lactobacillus plantarum on gut barrier function in experimental obstructive jaundice

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