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Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope

Applied physics letters, 1999-11, Vol.75 (20), p.3219-3221

1999

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Surface resistance and field emission current measurements on chemically vapour deposited polycrystalline diamond measured by scanning probe methods

Journal of physics. Condensed matter, 2004-01, Vol.16 (2), p.S171-S179

2004

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Scanning probe field emission current measurements on diamond-like carbon films treated by reactive ion etching

Journal of physics. Condensed matter, 2004-01, Vol.16 (2), p.S301-S308

2004

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Device Simulation for Evaluating Effects of Inplane Biaxial Mechanical Stress on n-Type Silicon Semiconductor Devices

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2525-2536

2011

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Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling microscopy

Diamond and related materials, 2000-04, Vol.9 (3-6), p.1096-1099

2000

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Coating of pulp fiber with xonotlite under hydrothermal conditions

Journal of materials science letters, 2002-10, Vol.21 (19), p.1521-1523

2002

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Spatial variation of field emission current on nitrogen-doped diamond-like carbon surfaces by scanning probe method

Diamond and related materials, 2001-03, Vol.10 (3), p.863-867

2001

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Controlling Process of P Diffusion in Si Based on the Pair Diffusion Model

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2001-04, Vol.194-199, p.617-622

2001

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Scanning Probe Field Emission Current Measurements on Polycrystalline Diamond Films

Solid state phenomena, 2001-04, Vol.78-79, p.177-182

2001

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The field emission properties of silicon carbide whiskers grown by CVD

Surface & coatings technology, 2003-05, Vol.168 (1), p.37-42

2003

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Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique

Solid state phenomena, 1998-01, Vol.63-64, p.407-412

1998

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Method of determining capture cross section including a slow capture of carriers in the depletion edge region

Journal of applied physics, 1987-12, Vol.62 (12), p.4806-4811

1987

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Electron-beam-induced currents on beryllium-doped cubic boron nitride single crystal

Diamond and related materials, 2000-04, Vol.9 (3-6), p.605-608

2000

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Solubilities of Undecanolide and Pentadecanolactone in Supercritical Carbon Dioxide

Journal of chemical and engineering data, 2001-01, Vol.46 (1), p.69-72

2001

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Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms

Japanese Journal of Applied Physics, 2000-05, Vol.39 (5R), p.2483

2000

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Environmentally Benign Formation of Poly(methacrylate ester) Microspheres by Precipitation Copolymerization in Supercritical Carbon Dioxide

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 2003, Vol.36(4), pp.516-521

2003

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Transient current measurements after applying the electron-beam pulse on boron-doped homoepitaxial diamond films

Diamond and related materials, 1998-08, Vol.7 (8), p.1167-1171

1998

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Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in silicon

Journal of crystal growth, 2000-03, Vol.210 (1), p.128-131

2000

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Determination of high-field-enhanced emission rates with the constant capacitance-voltage transient technique

Journal of applied physics, 1989-04, Vol.65 (7), p.2734-2738

1989

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Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon

Japanese Journal of Applied Physics, 1999-01, Vol.38 (1R), p.36

1999

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Field-Emission Activation on Boron-Doped Chemical-Vapor-Deposited Polycrystalline Diamond Films

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 5A), p.3081-3084

2002

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Influence of melt-temperature fluctuations on striation formation in large-scale Czochralski Si growth systems

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.663-668

1996

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Analysis of transient currents due to the electron beam irradiation to boron-doped homoepitaxial diamond films

Diamond and related materials, 1999-03, Vol.8 (2), p.892-896

1999

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Investigation of grown-in defect formation in Czochralski silicon crystals by optical precipitate profiler

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.L731-L733

1997

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One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism

Japanese Journal of Applied Physics, 1998-12, Vol.37 (12R), p.6376

1998

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Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope

Surface resistance and field emission current measurements on chemically vapour deposited polycrystalline diamond measured by scanning probe methods

Scanning probe field emission current measurements on diamond-like carbon films treated by reactive ion etching

Device Simulation for Evaluating Effects of Inplane Biaxial Mechanical Stress on n-Type Silicon Semiconductor Devices

Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling microscopy

Coating of pulp fiber with xonotlite under hydrothermal conditions

Spatial variation of field emission current on nitrogen-doped diamond-like carbon surfaces by scanning probe method

Controlling Process of P Diffusion in Si Based on the Pair Diffusion Model

Scanning Probe Field Emission Current Measurements on Polycrystalline Diamond Films

The field emission properties of silicon carbide whiskers grown by CVD

Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique

Method of determining capture cross section including a slow capture of carriers in the depletion edge region

Electron-beam-induced currents on beryllium-doped cubic boron nitride single crystal

Solubilities of Undecanolide and Pentadecanolactone in Supercritical Carbon Dioxide

Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms

Environmentally Benign Formation of Poly(methacrylate ester) Microspheres by Precipitation Copolymerization in Supercritical Carbon Dioxide

Transient current measurements after applying the electron-beam pulse on boron-doped homoepitaxial diamond films

Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in silicon

Determination of high-field-enhanced emission rates with the constant capacitance-voltage transient technique

Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon

Field-Emission Activation on Boron-Doped Chemical-Vapor-Deposited Polycrystalline Diamond Films

Influence of melt-temperature fluctuations on striation formation in large-scale Czochralski Si growth systems

Analysis of transient currents due to the electron beam irradiation to boron-doped homoepitaxial diamond films

Investigation of grown-in defect formation in Czochralski silicon crystals by optical precipitate profiler

One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism

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