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Anomalous Ferromagnetism of quasiparticle doped holes in cuprate heterostructures revealed using resonant soft X-ray magnetic scattering

Nature communications, 2022-08, Vol.13 (1), p.4639-4639, Article 4639

2022

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α-Fe2O3 nanotubes-reduced graphene oxide composites as synergistic electrochemical capacitor materials

Nanoscale, 2012-04, Vol.4 (9), p.2958-2961

2012

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Nucleation and growth of cobalt nanostructures on highly oriented pyrolytic graphite

Physical chemistry chemical physics : PCCP, 2006-01, Vol.8 (28), p.3326-3334

2006

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Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates

Physical chemistry chemical physics : PCCP, 2010-01, Vol.12 (26), p.7171-7183

2010

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Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface

Surface science, 2011-10, Vol.605 (19-20), p.1852-1860

2011

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Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2 x 1)

The Journal of chemical physics, 2005-07, Vol.123 (3), p.34701-34701

2005

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Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics

Surface science, 2006-03, Vol.600 (6), p.1308-1318

2006

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Characterization of the electronic structure and thermal stability of HfO2/SiO2/Si gate dielectric stack

Surface and interface analysis, 2017-08, Vol.49 (8), p.776-780

2017

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Templating nanotraffic light – dynamic tricoloured blinking silver nanoclusters on a graphene oxide film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (17), p.4641-4648

2018

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Spontaneous decoration of Au nanoparticles on micro-patterned reduced graphene oxide shaped by focused laser beam

Journal of applied physics, 2015-02, Vol.117 (5)

2015

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Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

Applied physics letters, 2014-05, Vol.104 (19)

2014

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The dissociative adsorption of silane and disilane on Si ( 100 ) - ( 2 × 1 )

The Journal of chemical physics, 2007-10, Vol.127 (16), p.164713-164713-12

2007

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Interaction of magnetic transition metal dimers with spin-polarized hydrogenated graphene

The Journal of chemical physics, 2013-03, Vol.138 (12), p.124709-124709

2013

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Revisiting the vibrational spectra of silicon hydrides on Si ( 100 ) - ( 2 × 1 ) surface: What is on the surface when disilane dissociates?

The Journal of chemical physics, 2010-08, Vol.133 (7), p.074708-074708-9

2010

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Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited

Surface science, 1997-03, Vol.374 (1), p.397-405

1997

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Hydrogen desorption kinetics from the Si(1-x)Gex(100)-(2x1) surface

The Journal of chemical physics, 2004-03, Vol.120 (11), p.5424-5431

2004

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Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy

Surface science, 2003-06, Vol.531 (3), p.L383-L387

2003

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Molecular mechanisms for disilane chemisorption on Si ( 100 ) - ( 2 × 1 )

The Journal of chemical physics, 2009-03, Vol.130 (11), p.114702-114702-11

2009

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6H-SiC(0 0 0 1) phase transition: evolution of the (6 × 6) magic clusters

Surface science, 2004-06, Vol.558 (1), p.145-158

2004

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RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

Journal of crystal growth, 2000-02, Vol.209 (2), p.321-326

2000

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On STM imaging of GaAs(0 0 1)-( n×6) surface reconstructions: Does the (6×6) structure exist?

Surface science, 2002-07, Vol.513 (2), p.249-255

2002

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Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(001) surface

Journal of crystal growth, 2003-04, Vol.251 (1-4), p.676-680

2003

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Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si( [formula omitted]) and Si( [formula omitted]) surfaces

Surface science, 2003-06, Vol.532, p.639-644

2003

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Probing the silane, disilane and germane adsorption kinetics on the silicon (0 0 1) surface

Journal of crystal growth, 2000-02, Vol.209 (2), p.306-310

2000

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Comment on “A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs [formula omitted]A thin films” [Surf. Sci. 459 (2000) 277–286]

Surface science, 2002-08, Vol.515 (1), p.263-265

2002

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Anomalous Ferromagnetism of quasiparticle doped holes in cuprate heterostructures revealed using resonant soft X-ray magnetic scattering

α-Fe2O3 nanotubes-reduced graphene oxide composites as synergistic electrochemical capacitor materials

Nucleation and growth of cobalt nanostructures on highly oriented pyrolytic graphite

Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates

Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface

Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2 x 1)

Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics

Characterization of the electronic structure and thermal stability of HfO2/SiO2/Si gate dielectric stack

Templating nanotraffic light – dynamic tricoloured blinking silver nanoclusters on a graphene oxide film

Spontaneous decoration of Au nanoparticles on micro-patterned reduced graphene oxide shaped by focused laser beam

Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

The dissociative adsorption of silane and disilane on Si ( 100 ) - ( 2 × 1 )

Interaction of magnetic transition metal dimers with spin-polarized hydrogenated graphene

Revisiting the vibrational spectra of silicon hydrides on Si ( 100 ) - ( 2 × 1 ) surface: What is on the surface when disilane dissociates?

Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited

Hydrogen desorption kinetics from the Si(1-x)Gex(100)-(2x1) surface

Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy

Molecular mechanisms for disilane chemisorption on Si ( 100 ) - ( 2 × 1 )

6H-SiC(0 0 0 1) phase transition: evolution of the (6 × 6) magic clusters

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

On STM imaging of GaAs(0 0 1)-( n×6) surface reconstructions: Does the (6×6) structure exist?

Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(001) surface

Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si( [formula omitted]) and Si( [formula omitted]) surfaces

Probing the silane, disilane and germane adsorption kinetics on the silicon (0 0 1) surface

Comment on “A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs [formula omitted]A thin films” [Surf. Sci. 459 (2000) 277–286]

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